MT40A1G8AG-062E vs H5AN8G8NAFR-PBC 比較

詳細並排比較 MT40A1G8AG-062E 由 Micron Technology 與 H5AN8G8NAFR-PBC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 啟用中
SK hynix
H5AN8G8NAFR-PBC H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC - 8Gb DDR4 SDRAM x8 1.2V | SK hynix

H5AN8G8NAFR-PBC ✓ 啟用中

規格比較

參數 MT40A1G8AG-062E H5AN8G8NAFR-PBC
品牌 Micron Technology SK hynix
類別 Memory ICs DRAM
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 8 Gbit —
組織 1G x 8 1G x 8
介面 Parallel DDR4 (double data rate, synchronized to clock)
Clock Frequency 1.6 GHz (DDR4-3200, 3200 MT/s data rate) —
Clock Cycle Time 19 ns class (-062E speed grade) —
Supply Voltage (VDD) 1.2 V —
封裝 78-FBGA (7.5 x 11 mm) FBGA-78
安裝類型 Surface Mount (BGA) Surface Mount
Temperature Grade Automotive (AUT) —
Access Time (CAS Latency class) DDR4-3200 timing class (tAA per datasheet) —
Bank Group Architecture Yes (DDR4 bank groups) —
Termination On-Die Termination (ODT) —
CA Parity Supported (DDR4 command/address parity) —
Packaging Option Tape and Reel (TR / :R suffix) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh rate] —
Density — 8 Gb
供應電壓 — 1.2 V
Speed Grade / Data Rate — [DATA_NEEDED: speed grade / data rate]
Address Inputs — A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed)
Connectivity Test Mode — TEN (optional input on x4/x8, required on x16)
Process Technology — CMOS
Lead-Free — Yes
無鹵素 — Yes
Datasheet Revision — Rev. 1.2 / July 2017
工作溫度 — [DATA_NEEDED: operating temperature range]

資料表與資源

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