MT40A1G8AG-062E vs H5AN8G8NAFR-RDC 比較

詳細並排比較 MT40A1G8AG-062E 由 Micron Technology 與 H5AN8G8NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
MT40A1G8AG-062E MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E - 8Gb DDR4 SDRAM 3200Mb/s x8 | Micron

MT40A1G8AG-062E ✓ 啟用中
SK hynix
H5AN8G8NAFR-RDC H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC - 8Gb DDR4 SDRAM x8 | SK hynix

H5AN8G8NAFR-RDC ✓ 啟用中

規格比較

參數 MT40A1G8AG-062E H5AN8G8NAFR-RDC
品牌 Micron Technology SK hynix
類別 Memory ICs Memory ICs
生命週期狀態 啟用中 啟用中
記憶體類型 DDR4 SDRAM DDR4 SDRAM
記憶體容量 8 Gbit —
組織 1G x 8 1G x 8 (x8)
介面 Parallel DDR4 (Double Data Rate 4)
Clock Frequency 1.6 GHz (DDR4-3200, 3200 MT/s data rate) —
Clock Cycle Time 19 ns class (-062E speed grade) —
Supply Voltage (VDD) 1.2 V —
封裝 78-FBGA (7.5 x 11 mm) 78-ball FBGA
安裝類型 Surface Mount (BGA) Surface Mount
Temperature Grade Automotive (AUT) —
Access Time (CAS Latency class) DDR4-3200 timing class (tAA per datasheet) —
Bank Group Architecture Yes (DDR4 bank groups) —
Termination On-Die Termination (ODT) —
CA Parity Supported (DDR4 command/address parity) —
Packaging Option Tape and Reel (TR / :R suffix) —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
工作溫度範圍 [DATA_NEEDED: operating temperature range] —
Refresh Rate [DATA_NEEDED: refresh rate] —
Density — 8 Gbit
Speed Grade — -RDC (DDR4-2666 class)
資料速率 — 2666 MT/s (per -R speed grade suffix)
Core Supply Voltage (VDD) — 1.2 V
I/O Supply Voltage (VDDQ) — 1.2 V
Wordline Supply (VPP) — 2.5 V
Banks / Bank Groups — 16 banks / 4 bank groups (DDR4 8Gb architecture)
Burst Length — 8 (BL8)
CAS 延遲 — [DATA_NEEDED: CAS Latency]
工作溫度 — [DATA_NEEDED: Operating Temperature range]
Lead-Free — Yes
無鹵素 — Yes
Datasheet Revision — Rev. 1.2 / Jul. 2017

資料表與資源

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