MT40A1G8SA-075:E vs MT40A1G8SA-062E 比較
詳細並排比較 MT40A1G8SA-075:E 由 Micron Technology 與 MT40A1G8SA-062E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A1G8SA-075:E | MT40A1G8SA-062E |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SDRAM - DDR4 | DDR4 SDRAM |
| 記憶體容量 | 8Gbit (1G x 8) | — |
| 介面 | Parallel | — |
| Clock Frequency | 1.33 GHz | 1.6 GHz |
| 資料速率 | 2666 MT/s | 3200 MT/s (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| 工作溫度範圍 | 0°C to +95°C | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| 封裝 | 78-FBGA (7.5x11 mm) | 78-ball FBGA (7.5 x 11 mm) |
| 安裝類型 | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| RoHS 狀態 | Compliant | — |
| Density | — | 8 Gbit |
| 組織 | — | 1G x 8 |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| 工作溫度 | — | 0C to +95C (CT range; IT: -40C to +95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| Burst Length | — | BL8, BC4 (burst chop) |
| 功能特色 | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |