MT40A1G8SA-075:E vs YZ48G08V-F9HPI-M 比較
詳細並排比較 MT40A1G8SA-075:E 由 Micron Technology 與 YZ48G08V-F9HPI-M 由 Loongtion. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A1G8SA-075:E | YZ48G08V-F9HPI-M |
|---|---|---|
| 品牌 | Micron Technology | Loongtion |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | SDRAM - DDR4 | DDR4 SDRAM |
| 記憶體容量 | 8Gbit (1G x 8) | — |
| 介面 | Parallel | Parallel |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s | 3200 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Supply Voltage | 2.5V (-125mV, +250mV) | — |
| 工作溫度範圍 | 0°C to +95°C | -40°C to +85°C |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| 封裝 | 78-FBGA (7.5x11 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Write Leveling | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| CRC Function | Supported | — |
| Data Mask Function | Supported | — |
| RoHS 狀態 | Compliant | Compliant |
| Density | — | 8 Gb |
| 組織 | — | 1G x 8 |
| 供應電壓 | — | 1.2 V |
| Package Type | — | FBGA78 |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| REACH Status | — | Compliant |
| AEC-Q100 | — | Not Applicable |