MT40A512M16JY-07EAIT:B vs K4A8G165WB-BCTD 比較
詳細並排比較 MT40A512M16JY-07EAIT:B 由 Micron Technology 與 K4A8G165WB-BCTD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ 啟用中Samsung Electronics
K4A8G165WB-BCTD - 8Gb DDR4 SDRAM 512Mx16 2666Mbps | Samsung
K4A8G165WB-BCTD ✓ 啟用中規格比較
| 參數 | MT40A512M16JY-07EAIT:B | K4A8G165WB-BCTD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s | 2666 Mbps |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| 介面 | Parallel | DDR4 (parallel, double data rate) |
| 封裝 | 96-FBGA (8x14) | 96FBGA |
| 工作溫度範圍 | -40°C to +105°C (AIT grade) | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | — |
| Density | — | 8 Gb |
| Supply Voltage (VDD) | — | 1.2 V |
| 工作溫度 | — | 0C to +85C |
| Die Generation | — | B-die |
| 安裝類型 | — | Surface Mount (BGA) |
| Data Mask | — | Supported (DM per x16 lane) |
| ZQ Calibration | — | Supported |
| Dynamic On-Die Termination | — | Supported |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Refresh Rate | — | [DATA_NEEDED: Refresh Rate] |
| RoHS 狀態 | — | Compliant (per JLCPCB listing: ROHS) |
| Moisture Sensitivity Level | — | [DATA_NEEDED: MSL Level] |