MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MPN： MT40A512M16JY-07EAIT:B ✓ 啟用中MT40A512M16JY-07EAIT:B 概覽
DDR4 SDRAM (Double Data Rate 4 Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both edges of the clock signal, effectively doubling the data rate. It operates at a lower voltage (1.2V) compared to DDR3 (1.5V), reducing power consumption while offering higher speed and density. DDR4 is the industry standard for modern servers, desktops, and embedded systems, providing a balance of performance, capacity, and energy efficiency.
Key features of the MT40A512M16JY-07EAIT:B include a supply voltage of VDD = VDDQ = 1.2V ±60mV, VPP = 2.5V, and on-die, internal, adjustable VREFDQ generation. It supports 1.2V pseudo open-drain I/O and has a refresh time of 8192 cycles at TC temperature range: 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, and 16ms at >95°C to 105°C. The device is AEC-Q100 qualified (indicated by the 'AIT' suffix), making it suitable for automotive applications.
The MT40A512M16JY-07EAIT:B utilizes Micron's advanced DRAM process technology, offering high reliability and performance. It features programmable data strobe preambles, on-die termination (ODT), and write leveling for improved signal integrity. The 96-ball FBGA package provides a compact footprint while enabling high-speed operation with minimal parasitic inductance.
Typical applications include automotive advanced driver-assistance systems (ADAS), infotainment systems, networking equipment, servers, and high-performance computing. Its automotive qualification and wide temperature range make it ideal for under-the-hood and in-cabin electronics.
When designing with this device, ensure proper decoupling capacitors are placed close to the VDD and VDDQ pins to minimize power supply noise. Follow Micron's layout guidelines for DDR4 routing to maintain signal integrity at 1.33 GHz.
直接替換替代品，適用於 MT40A512M16JY-07EAIT:B — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT40A512M16JY-07EAIT:B （相同外形與佔位） — 差異在於 Package, Data Rate, Burst Length, Interface, Operating Temperature.
MT40A512M16JY-075E AIT:B
✅ 直接替換📋 參考替代品（不在目錄中）
MT40A512M16JY-062E IT:B
✅ 直接替換📋 參考替代品（不在目錄中）
K4A8G165WB-BCTD
✅ 直接替換 ⚠️ 規格未經驗證✗ 缺貨
$37 / 單位
查看資料表 →H5AN8G6NAFR-UHC
✅ 直接替換 ⚠️ 規格未經驗證✓ 有庫存
$5.7422 / 單位
查看資料表 →NT5CC256M16DP-DI
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →MT40A512M16JY-07EAIT:B 最大額定值與電氣特性
| 記憶體類型 | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit |
| 組織 | 512M x 16 |
| Clock Frequency | 1.33 GHz |
| 資料速率 | 2666 MT/s |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV |
| VPP Voltage | 2.5V, -125mV, +250mV |
| 介面 | Parallel |
| 封裝 | 96-FBGA (8x14) |
| 工作溫度範圍 | -40°C to +105°C (AIT grade) |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| I/O Type | 1.2V pseudo open-drain |
| VREFDQ | On-die, internal, adjustable |
| AEC-Q100 | Qualified (AIT suffix) |
| RoHS | Compliant |
MT40A512M16JY-07EAIT:B 腳位配置
| 腳位 A1 | VDD — Power supply |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 A5 | DQ2 — Data input/output 2 |
| 腳位 A6 | DQ3 — Data input/output 3 |
| 腳位 A7 | VDDQ — I/O power supply |
| 腳位 A8 | DQ4 — Data input/output 4 |
| 腳位 A9 | DQ5 — Data input/output 5 |
| 腳位 A10 | VSS — Ground |
| 腳位 A11 | DQ6 — Data input/output 6 |
| 腳位 A12 | DQ7 — Data input/output 7 |
典型應用
MT40A512M16JY-07EAIT:B 適用於 6 應用s: Automotive ADAS, Networking Equipment, Industrial Automation, High-Performance Computing, Infotainment Systems, Edge AI and IoT Gateways.
Automotive ADAS
The MT40A512M16JY-07EAIT:B is AEC-Q100 qualified and operates over -40°C to +105°C, making it ideal for ADAS systems that require high-bandwidth memory for sensor fusion and real-time processing. Its 1.33 GHz clock and 8Gbit density support complex algorithms for object detection and decision-making. The 96-FBGA package allows compact PCB layouts in space-constrained automotive modules. With 1.2V operation, it minimizes power consumption, critical for battery-powered vehicles. The wide temperature range ensures reliable operation in engine compartments and under direct sunlight.
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Networking Equipment
In networking switches and routers, the MT40A512M16JY-07EAIT:B provides high-speed packet buffering and routing table storage. Its 2666 MT/s data rate ensures low latency for data forwarding, while the 8Gbit capacity supports large routing tables and QoS queues. The 1.2V supply reduces power dissipation in dense line cards. The parallel interface simplifies integration with network processors and FPGAs. The 96-FBGA package is suitable for high-density PCB designs, and the automotive-grade temperature range ensures reliability in telecom shelters and data centers.
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Industrial Automation
For industrial controllers and PLCs, the MT40A512M16JY-07EAIT:B offers reliable memory for program storage and data logging. Its wide temperature range (-40°C to +105°C) ensures operation in harsh factory environments. The 8Gbit density supports complex control algorithms and HMI graphics. The 1.2V operation reduces heat generation, extending the life of sealed enclosures. The AEC-Q100 qualification provides confidence in long-term reliability. The 96-FBGA package is compatible with standard industrial PCB manufacturing processes.
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High-Performance Computing
In servers and workstations, the MT40A512M16JY-07EAIT:B provides high-bandwidth memory for data-intensive applications. Its 2666 MT/s data rate and 8Gbit capacity support virtualization, big data analytics, and AI inference. The 1.2V supply reduces power consumption in large memory arrays. The parallel interface allows easy integration with CPUs and GPUs. The 96-FBGA package enables high-density DIMM designs. The automotive-grade temperature range is a bonus for edge computing in harsh environments.
推薦
Infotainment Systems
The MT40A512M16JY-07EAIT:B is ideal for automotive infotainment, providing memory for navigation, multimedia, and connectivity. Its high bandwidth supports smooth video playback and responsive UI. The AEC-Q100 qualification ensures reliability in vehicle environments. The 8Gbit density allows storage of maps and media. The 1.2V operation reduces power draw, important for battery life. The 96-FBGA package is compact for dashboard integration. The wide temperature range covers both cabin and exterior-mounted displays.
推薦
Edge AI and IoT Gateways
For edge AI devices and IoT gateways, the MT40A512M16JY-07EAIT:B provides the memory capacity and speed needed for local inference and data aggregation. Its 8Gbit density supports neural network models, while the 2666 MT/s data rate enables real-time processing. The 1.2V supply is efficient for battery-powered devices. The automotive-grade temperature range allows deployment in outdoor and industrial settings. The 96-FBGA package is suitable for compact gateway designs. The parallel interface integrates with common SoCs and FPGAs.
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推薦產品摘要
工程參考資料，適用於 MT40A512M16JY-07EAIT:B — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT40A512M16JY-075E AIT:B | MT40A512M16JY-062E IT:B | K4A8G165WB-BCTD | H5AN8G6NAFR-UHC |
|---|---|---|---|---|---|
| Package | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) | 96-FBGA (8x14) |
| Brand | Micron Technology | Micron Technology | Micron Technology | Samsung Electronics | SK Hynix |
| Memory Size | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit | 8 Gbit |
| Organization | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | 1.33 GHz | 1.6 GHz | 1.33 GHz | 1.33 GHz |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | -40°C to +105°C | -40°C to +105°C | -40°C to +95°C | -40°C to +95°C | -40°C to +95°C |
| AEC-Q100 | Qualified | Qualified | Qualified | Not qualified | Not qualified |
主要差異化特點
- Automotive grade (AEC-Q100) with extended temperature range (對比K4A8G165WB-BCTD)
- Higher speed grade option available (對比MT40A512M16JY-075E AIT:B)
- Cross-brand compatibility with major memory manufacturers (對比H5AN8G6NAFR-UHC)
設計說明
Ensure stable power supply with VDD = VDDQ = 1.2V ±60mV and VPP = 2.5V. Use low-ESR decoupling capacitors (0.1uF and 1uF) placed close to each VDD and VDDQ pin. For VPP, use a 0.1uF capacitor to ground. Follow Micron's power distribution network guidelines to minimize voltage droop during high-speed switching.
Route DDR4 signals with controlled impedance (typically 40-50 ohms for single-ended, 80-100 ohms for differential). Maintain matched trace lengths for DQ, DQS, and address/command signals to ensure timing. Use ground planes beneath the memory to reduce noise. Refer to Micron's DDR4 PCB design guide for detailed layout rules.
The MT40A512M16JY-07EAIT:B operates up to +105°C, but ensure adequate airflow or heatsinking in high-temperature environments. The 96-FBGA package has a thermal resistance of approximately 20°C/W (theta_JA). For automotive applications, consider the ambient temperature and power dissipation to keep junction temperature within limits.
合規資訊
AEC-Q100 qualified per 'AIT' suffix. RoHS compliant per Micron product page.
