MT40A512M16JY-07EAIT:B vs NT5AD512M16 比較
詳細並排比較 MT40A512M16JY-07EAIT:B 由 Micron Technology 與 NT5AD512M16 由 Nanya Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT40A512M16JY-07EAIT:B - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-07EAIT:B ✓ 啟用中規格比較
| 參數 | MT40A512M16JY-07EAIT:B | NT5AD512M16 |
|---|---|---|
| 品牌 | Micron Technology | Nanya Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 8 Gbit | — |
| 組織 | 512M x 16 | 512M x 16 |
| Clock Frequency | 1.33 GHz | — |
| 資料速率 | 2666 MT/s | 3200 Mbps (DDR4-3200) |
| Supply Voltage (VDD/VDDQ) | 1.2V ±60mV | — |
| VPP Voltage | 2.5V, -125mV, +250mV | — |
| 介面 | Parallel | — |
| 封裝 | 96-FBGA (8x14) | 96-ball FBGA |
| 工作溫度範圍 | -40°C to +105°C (AIT grade) | — |
| Refresh Time | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C | — |
| I/O Type | 1.2V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable | — |
| AEC-Q100 | Qualified (AIT suffix) | — |
| RoHS | Compliant | Compliant |
| Total Density | — | 8 Gbit |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature (Commercial) | — | 0°C to +95°C |
| Operating Temperature (Industrial) | — | -40°C to +95°C |
| Auto Self-Refresh | — | Yes |
| Built-in Temperature Sensor | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| Write Leveling | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |