MT40A512M8RH-075E:B vs K4A4G085WF-BITD 比較
詳細並排比較 MT40A512M8RH-075E:B 由 Micron Technology 與 K4A4G085WF-BITD 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M8RH-075E:B | K4A4G085WF-BITD |
|---|---|---|
| 品牌 | Micron Technology | Samsung Electronics |
| 類別 | Memory ICs | DRAM |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| 資料速率 | 2666 MT/s (DDR4-2666) | — |
| Clock Frequency | 1333 MHz (1.33 GHz) | — |
| VDD Supply Voltage | 1.2 V +/-60 mV | — |
| VDDQ Supply Voltage | 1.2 V +/-60 mV | — |
| VPP Supply Voltage | 2.5 V, -125 mV/+250 mV | — |
| 介面類型 | Parallel | — |
| I/O Structure | 1.2V pseudo open-drain | — |
| 參考電壓 | On-die internal adjustable VREFDQ generation | — |
| 封裝 | 78-FBGA (9 x 10.5 mm), TFBGA | 78-ball FBGA (78FBGA) |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| 工作溫度 | [DATA_NEEDED: operating temperature range (standard grade)] | -40C to +95C |
| Refresh | Refresh max interval extension at extended TC temperature range (125C capable per family features) | Self-refresh and auto-refresh (8K/64ms per JEDEC DDR4) |
| Speed Grade Suffix | -075E | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| Packaging Option Suffix | :B (ball map B designation per Mouser listing) | — |
| Speed | — | 2666 Mbps (MT/s) |
| Supply Voltage (VDD) | — | 1.2 V |
| VPP Voltage | — | 2.5 V |
| Bank Architecture | — | 8 banks x 4 bank groups |
| Burst Length | — | BL8 |
| CAS 延遲 | — | CL19 (typical at 2666 Mbps) |
| 介面 | — | Parallel, DDR4 SSTL12 |
| Termination | — | ODT / dynamic ODT |
| Data Mask | — | DM supported (x8) |
| Application Grade | — | Industrial |