MT40A512M8RH-083E vs MT40A512M8RH-075E:B 比較
詳細並排比較 MT40A512M8RH-083E 由 Micron Technology 與 MT40A512M8RH-075E:B 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MT40A512M8RH-083E | MT40A512M8RH-075E:B |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gbit |
| 組織 | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | Refresh max interval extension at extended TC temperature range (125C capable per family features) |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | 1.2V pseudo open-drain |
| VREFDQ | On-die internal, adjustable generation | — |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: operating temperature range (standard grade)] |
| 封裝 | 78-ball FBGA (9 x 10.5 mm) | 78-FBGA (9 x 10.5 mm), TFBGA |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| RoHS 狀態 | Compliant | [DATA_NEEDED: RoHS status] |
| CAS 延遲 | [DATA_NEEDED: CAS latency per speed bin table] | — |
| 資料速率 | — | 2666 MT/s (DDR4-2666) |
| Clock Frequency | — | 1333 MHz (1.33 GHz) |
| VDD Supply Voltage | — | 1.2 V +/-60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/-60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV/+250 mV |
| 介面類型 | — | Parallel |
| 參考電壓 | — | On-die internal adjustable VREFDQ generation |
| 安裝類型 | — | Surface Mount |
| Speed Grade Suffix | — | -075E |
| Packaging Option Suffix | — | :B (ball map B designation per Mouser listing) |