MW4IC001MR4 vs MW4IC001NR4 比較

詳細並排比較 MW4IC001MR4 由 NXP Semiconductors 與 MW4IC001NR4 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MW4IC001MR4 MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP

MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP

MW4IC001MR4 ⚠ 最後購買機會
NXP Semiconductors
MW4IC001NR4 MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP

MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP

MW4IC001NR4 ⚠ 最後購買機會

規格比較

參數 MW4IC001MR4 MW4IC001NR4
品牌 NXP Semiconductors NXP Semiconductors
類別 RF Amplifiers RF Amplifiers
生命週期狀態 最後購買 最後購買
Technology LDMOS (Laterally Diffused MOS) RF LDMOS (Laterally Diffused MOSFET)
Frequency Range 800 MHz to 2170 MHz 800 MHz to 2170 MHz
Output Power (CW, P1dB typical) 900 mW (29.5 dBm) —
Power Gain at 2170 MHz 13 dB —
Drain Efficiency at 2170 MHz 38 % —
Drain Supply Voltage (VDD) 28 V (typ) —
Quiescent Current (IDQ) 12 mA —
Input / Output Impedance 50 ohm (nominal) Internally matched to 50 ohm
Supported Air Interfaces GSM, TDMA, CDMA, EDGE, W-CDMA —
Operating Case Temperature -40C to +85C —
封裝 PLD-1.5 (RF1649-4, over-molded plastic) —
安裝類型 Surface Mount —
Terminal Finish Tin/Lead (Sn/Pb) —
RoHS 狀態 Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) Compliant (N-suffix = lead-free transition marking)
Application Role Analog predistortion (DPD) reference amplifier —
Manufacturer — NXP Semiconductors (originally Freescale Semiconductor)
Part Number — MW4IC001NR4
RF Type — Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA
功能 — Wideband integrated power amplifier / APD feedback amplifier
Gain (small-signal) — 13 dB
Output Power (P1dB) — 900 mW (approx. 29.5 dBm)
供應電壓 — 26 V (typ.) / 28 V (rated)
Supply Current (quiescent) — 12 mA (typ.)
封裝 / 外殼 — PLD-1.5 (over-molded plastic flange-mount)
Packaging — Tape & Reel (R4 suffix = 500 pcs/reel standard)
工作溫度 — -40 C to +85 C ambient
Termination Finish — Lead-free (matte tin)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價