MX30LF4G18AC-TI-T vs MT29F4G08ABADAWP-IT:D 比較
詳細並排比較 MX30LF4G18AC-TI-T 由 Macronix 與 MT29F4G08ABADAWP-IT:D 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Micron Technology
MT29F4G08ABADAWP-IT:D - 4Gbit SLC NAND Flash Parallel x8 | Micron
MT29F4G08ABADAWP-IT:D ✓ 啟用中規格比較
| 參數 | MX30LF4G18AC-TI-T | MT29F4G08ABADAWP-IT:D |
|---|---|---|
| 品牌 | Macronix | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | Non-volatile NAND Flash (SLC) | FLASH - NAND (SLC) |
| Density | 4 Gbit (512 Mbyte) | — |
| 組織 | 512M x 8 bit | — |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | 2.7 V to 3.6 V |
| 介面 | Parallel (asynchronous), ONFI 1.0 compliant | Parallel (byte-wide, x8) |
| 資料匯流排寬度 | 8 bit | — |
| Access Time (tRC) | 20 ns (typical) | 25 ns |
| Page Size | 2048 byte + 64 byte spare area | 2048 + 64 bytes (or 4096 + 128 bytes in ONFI 2.1) |
| Block Size | 64 pages (128 KB + 4 KB spare) | 64 pages x 4 KB |
| Required ECC | 4-bit ECC per 528-byte sector | — |
| Program Time (typical) | 300 us per page | — |
| Erase Time (typical) | 2 ms per block | — |
| Data Retention | 10 years | — |
| Endurance (P/E Cycles) | [DATA_NEEDED: endurance cycles] | 100,000 typical (SLC) |
| 工作溫度 | -40 C to +85 C (industrial) | -40 C to +85 C (Industrial) |
| 封裝 | 48-pin TSOP-I (12 mm x 20 mm) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| RoHS 狀態 | Compliant | Compliant |
| 記憶體容量 | — | 4 Gbit (512M x 8) |
| Memory Organization | — | 512M x 8 |
| ONFI Version | — | ONFI 2.1 |
| 封裝 / 外殼 | — | 48-TFSOP (0.724", 18.40 mm width) |
| Planes per Die | — | 2 |
| Packaging | — | Tray |