NT5AD512M16C4-JR vs MT40A512M16TB-062E:J 比較
詳細並排比較 NT5AD512M16C4-JR 由 Nanya Technology 與 MT40A512M16TB-062E:J 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5AD512M16C4-JR | MT40A512M16TB-062E:J |
|---|---|---|
| 品牌 | Nanya Technology | Micron Technology |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | $73.75 | — |
| 記憶體類型 | DDR4 SDRAM | SDRAM - DDR4 |
| 組織 | 512M x16 | — |
| Density | 8 Gbit | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 資料速率 | 1.6 GHz (DDR4-3200) | — |
| 封裝 | TFBGA-96 | 96-FBGA (7.5x13.5 mm) |
| 工作溫度範圍 | 0°C to +95°C | 0°C to 95°C |
| Standby Current | 0.023 A (max) | — |
| Number of Terminals | 96 | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| 記憶體容量 | — | 8Gbit (512M x 16) |
| Clock Frequency | — | 1.6 GHz |
| Access Time | — | 19 ns |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply Voltage | — | 2.5V (-125mV, +250mV) |
| I/O Type | — | 1.2V pseudo open-drain |
| Refresh Time | — | 64ms at -40°C to 85°C; 32ms at >85°C to 95°C; 16ms at >95°C |
| Internal Banks (x16) | — | 8 (2 groups of 4 banks each) |
| Prefetch Architecture | — | 8n-bit |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| 安裝類型 | — | Surface Mount |