RTAX2000DL-1CQ352E vs RTAX2000DL-CQ352B 比較
詳細並排比較 RTAX2000DL-1CQ352E 由 Microchip Technology 與 RTAX2000DL-CQ352B 由 Microchip Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
Microchip Technology
RTAX2000DL-1CQ352E - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-1CQ352E ✓ 啟用中Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ 啟用中規格比較
| 參數 | RTAX2000DL-1CQ352E | RTAX2000DL-CQ352B |
|---|---|---|
| 品牌 | Microchip Technology | Microchip Technology |
| 類別 | FPGA & CPLD | FPGA & CPLD |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Equivalent System Gates | 2000000 gates | 2,000,000 |
| Configurable Logic Blocks (CLBs) | 19712 | — |
| Logic Cells | 29568 | [DATA_NEEDED: Logic Cells] |
| DSP Mathblocks | Up to 120 | Up to 120 |
| DSP MAC Performance | 125 MHz 18-bit x 18-bit multiply-accumulate | 125 MHz, 18-bit x 18-bit multiply-accumulate |
| Embedded Memory | Up to 540 kbits SRAM with optional EDAC | Up to 540 kbits with optional EDAC protection |
| Core Supply Voltage | 1.5 V nominal (1.425 V to 1.575 V) | — |
| Technology | Digital CMOS, antifuse (nonvolatile, one-time programmable) | — |
| Total Ionizing Dose (Functional) | 300 krad(Si) | 300 krad (Si) |
| Total Ionizing Dose (Parametric rating) | 200 krad(Si) | — |
| User I/O | 166 input and 166 output terminals | — |
| 封裝 | 352-terminal CQFP (Ceramic Quad Flat Pack), column E lead finish | 352-terminal ceramic CQFP, metal-sealed |
| 安裝類型 | Surface Mount | Surface Mount |
| Family | RTAX-DSP / RTAX-SL radiation-tolerant FPGAs | — |
| Configuration | Live at power-up, no external configuration device | Live at power-up, no external boot PROM required |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature Range] |
| Speed Grade | -1 (standard) | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | — |
| CLBs | — | 19,712 |
| Programming Technology | — | Nonvolatile antifuse |
| Total Ionizing Dose (Parameter) | — | 200 krad (Si) |
| Core Supply Voltage (Nominal) | — | 1.5 V |
| Core Supply Voltage Range | — | 1.425 V to 1.575 V |
| Terminal Pitch | — | 0.500 mm |
| Application Domain | — | Space flight systems |