TPD1E01B04DPYR vs TPD1E10B06DPYR 比較

詳細並排比較 TPD1E01B04DPYR 由 Texas Instruments 與 TPD1E10B06DPYR 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
TPD1E01B04DPYR TPD1E01B04DPYR - 0.18pF ESD Diode USB Type-C | Texas Instruments

TPD1E01B04DPYR - 0.18pF ESD Diode USB Type-C | Texas Instruments

TPD1E01B04DPYR ✓ 啟用中
Texas Instruments
TPD1E10B06DPYR TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR - Single-Channel ESD TVS Diode, ±30kV | TI

TPD1E10B06DPYR ✓ 啟用中

規格比較

參數 TPD1E01B04DPYR TPD1E10B06DPYR
品牌 Texas Instruments Texas Instruments
類別 Surge Protectors Surge Protectors
生命週期狀態 啟用中 啟用中
Product Type 1-Channel Bidirectional TVS ESD Protection Diode —
IO Capacitance (Typ) 0.18 pF (0.18 to 0.20 pF) —
Reverse Standoff Voltage 3.6 V —
ESD Rating ±15 kV (IEC 61000-4-2 Level 4) —
Clamping Voltage 15 V —
Peak Pulse Current (Ipp) 2.5 A (8/20 us) 5 A (8/20 µs)
Polarity Bidirectional Bidirectional (back-to-back TVS)
Target Interface Speed Up to 20 Gbps —
Target Applications USB Type-C, Thunderbolt 3 —
封裝 2-X1SON (DPY, 0402/DFN1006 footprint) X1SON / 2-X1SON (DPY), 1.0 x 0.6 mm
安裝類型 Surface Mount Surface Mount
Number of Channels 1 —
工作溫度 [DATA_NEEDED: operating temperature range] -40 °C to +125 °C
Dynamic Resistance (R_DYN) Low (per TI datasheet, [DATA_NEEDED: exact value]) —
Breakdown Voltage [DATA_NEEDED: breakdown voltage] —
RoHS 狀態 [DATA_NEEDED: RoHS status] Compliant
Power Line Protection No (signal line ESD protection) —
Device Type — Single-channel ESD protection TVS diode
Working Voltage (Vrwm) — 5 V (typical); 14 V clamp at 5 A Ipp
DC Breakdown Voltage — ±6 V (minimum)
ESD Contact Discharge — ±30 kV (IEC 61000-4-2)
ESD Air-Gap Discharge — ±30 kV (IEC 61000-4-2)
Line Capacitance — 12 pF (typical)
IO Capacitance — 10 pF (typical)
Dynamic Resistance (R_DYNAMIC) — 0.37 Ω
Leakage Current — Ultra-low (nA range per datasheet)
ESD Standard — IEC 61000-4-2 Level 4 (Air & Contact)
MSL 等級 — Level 3 (per PartGenie summary)

資料表與資源

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