UCC5390ECDR vs UCC5390ECD 比較

詳細並排比較 UCC5390ECDR 由 Texas Instruments 與 UCC5390ECD 由 Texas Instruments. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Texas Instruments
UCC5390ECDR UCC5390ECDR - 10A Isolated Gate Driver, 3kVrms, SOIC-8 | TI

UCC5390ECDR - 10A Isolated Gate Driver, 3kVrms, SOIC-8 | TI

UCC5390ECDR ✓ 啟用中
Texas Instruments
UCC5390ECD UCC5390ECD - 10A Isolated Gate Driver, 3kVrms, 8-SOIC | TI

UCC5390ECD - 10A Isolated Gate Driver, 3kVrms, 8-SOIC | TI

UCC5390ECD ✓ 啟用中

規格比較

參數 UCC5390ECDR UCC5390ECD
品牌 Texas Instruments Texas Instruments
類別 Power MOSFET Drivers Power MOSFET Drivers
生命週期狀態 啟用中 啟用中
功能 Single-channel isolated gate driver —
Isolation Technology Capacitive coupling Capacitive (basic isolation)
Isolation Voltage (RMS) 3 kVrms (UL 1577 basic isolation) —
Number of Channels 1 1
Peak Source Current 10 A —
Peak Sink Current 10 A —
Output Structure Split output (OUTH / OUTL) —
UVLO Threshold 12 V (GND-referenced) —
Supply Voltage (VCC) 3 V to 15 V (input side) —
Output Supply (VDD - VEE) Up to +18 V / -13 V (bipolar) —
Common-Mode Transient Immunity (CMTI) >= 100 kV/us minimum >=100 kV/us (minimum)
Propagation Delay (typical) [DATA_NEEDED: propagation delay ns] —
封裝 8-pin SOIC (D) SOIC-8 (D)
工作溫度範圍 -40 C to +125 C -40C to +125C
RoHS 狀態 Compliant Compliant
Safety Certifications UL 1577, VDE 0884-11 (basic isolation) —
Compatible Power Devices MOSFET, IGBT, SiC MOSFET —
Isolation Voltage Rating — 3 kVrms (basic)
Output Peak Source Current — 10 A
Output Peak Sink Current — 10 A
UVLO Threshold (VCC2) — 12 V
Propagation Delay — [DATA_NEEDED: propagation delay ns]
Input Logic — TTL/CMOS compatible
Output Supply Voltage (VCC2) — [DATA_NEEDED: VCC2 min/max V]
Input Supply Voltage (VCC1) — [DATA_NEEDED: VCC1 min/max V]
輸出配置 — Single output, split OUTH/OUTL not present in -E variant
Approximate Body Size — 3.91 mm x 4.90 mm (SOIC-8 D)
MSL 等級 — [DATA_NEEDED: MSL level]
AEC-Q100 Qualified — No (industrial grade)

資料表與資源

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