BSC093N15NS5 - 150V 9.3mΩ OptiMOS™5 N-Ch MOSFET | Infineon
MPN： BSC093N15NS5 ✓ 啟用中BSC093N15NS5 概覽
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between the drain and source terminals. OptiMOS™ 5 represents Infineon's fifth-generation 150 V platform, optimized for low FOM (Figure of Merit, the product of RDS(on) and total gate charge Qg) to minimize switching and conduction losses simultaneously. In the broader taxonomy, MOSFETs sit within discrete semiconductors, alongside IGBTs, diodes, and transistors, and are foundational to switching power conversion, motor control, and load management circuits.
Key features include a 150 V drain-source breakdown voltage, 9.3 mOhm maximum on-resistance at VGS=10 V, low gate charge for reduced driver losses, and an integrated source-connected Kelvin-source pin configuration in the SuperSO8 5x6 package that lowers parasitic source inductance and improves switching performance at high di/dt. The PG-TDSON-8-7 footprint offers an exposed top-side coolable thermal pad, enhancing thermal transfer.
The BSC093N15NS5 uses a trench-gate OptiMOS™ 5 cell architecture that delivers a low RDS(on)*Qg figure of merit, enabling reduced switching losses in hard-switched topologies and allowing operation at higher switching frequencies without the efficiency penalty seen in older planar MOSFET generations.
Typical applications include telecom 48 V hot-swap and OR-ing circuits, solar inverters, low-voltage drives such as forklifts and e-scooters, server and datacom synchronous rectifiers, and industrial SMPS secondary-side rectification where high current handling and low conduction loss are required.
When designing with this device, ensure that the gate drive voltage swings cleanly between 0 V and 10 V; partial gate enhancement increases RDS(on) and conduction loss. The exposed pad must be soldered to a sufficiently large copper area to keep the junction temperature within the 150 C maximum rating.
This page synthesizes distributor stock and pricing data, parametric drop-in alternatives, and design notes not aggregated on any single manufacturer page, providing a one-stop engineering reference for the BSC093N15NS5.
直接替換替代品，適用於 BSC093N15NS5 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： BSC093N15NS5 （相同外形與佔位） — 差異在於 Package, Technology.
BSC093N15NS5SCATMA1
✅ 直接替換📋 參考替代品（不在目錄中）
BSC093N15NS5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →STP093N15
✅ 直接替換📋 參考替代品（不在目錄中）
BSC093N15NS5 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Part Number | BSC093N15NS5 |
| Technology | OptiMOS™ 5 |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc | 87 A |
| On-Resistance RDS(on) max at VGS=10V | 9.3 mOhm |
| Power Dissipation (Tc) | 139 W |
| 封裝 | PG-TDSON-8-7 (SuperSO8 5x6) |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55C to +150C |
| RoHS 狀態 | Compliant |
| AEC-Q100 Automotive Qualified | Not qualified (standard grade) |
BSC093N15NS5 腳位配置
| 腳位 1 | Gate — Gate drive input |
| 腳位 2 | Source — Source connection (Kelvin source) |
| 腳位 3 | Source — Source connection |
| 腳位 4 | Source — Source connection |
| 腳位 5 | Source — Source connection |
| 腳位 6 | Source — Source connection |
| 腳位 7 | Drain — Drain connection |
| 腳位 8 | Drain — Drain connection |
| 腳位 PAD | Drain (Exposed Pad) — Drain / thermal pad (solder to PCB copper) |
典型應用
BSC093N15NS5 適用於 6 應用s: Telecom 48V Hot-Swap & OR-ing, Solar Inverter MPPT Stage, Low-Voltage Industrial Drives (Forklift / E-scooter), Server & Datacom Synchronous Rectifiers, eMobility / E-bike Battery Protection, Industrial SMPS Secondary-Side Rectification.
Telecom 48V Hot-Swap & OR-ing
The BSC093N15NS5 fits telecom 48V hot-swap and OR-ing circuits because its 150V VDS rating provides more than 3x margin over the 48V bus, while 9.3mOhm RDS(on) keeps conduction loss below 5W at 100A peak inrush events. Its low Qg enables fast turn-on/turn-off required for inrush limiting and reverse-current blocking. Placed on the high-side with a hot-swap controller, the MOSFET handles continuous OR-ing duty with thermal headroom in 1U rack server PSUs.
推薦
Solar Inverter MPPT Stage
The BSC093N15NS5 suits solar inverter MPPT and DC-DC boost stages because its 150V breakdown covers 96V PV strings with margin for ringing, and its 9.3mOhm RDS(on) keeps conduction loss under 1% at 30-40A MPPT operating current. OptiMOS™5's low FOM allows switching at 50-100kHz with manageable driver losses. Used as the synchronous MOSFET in interleaved boost converters, it enables >98% peak efficiency in residential and commercial string inverters.
推薦
Low-Voltage Industrial Drives (Forklift / E-scooter)
The BSC093N15NS5 drives low-voltage industrial motor systems like 48-72V forklift traction and e-scooter controllers because its 150V VDS comfortably handles 24-72V battery rails with transients, and 87A continuous current supports peak motor demands up to 200A in pulse-mode with proper PCB layout. The SuperSO8 5x6 footprint saves board space vs TO-220 alternatives, enabling more compact IPM designs. Used in three-phase bridge or half-bridge configurations with a gate driver like the EiceDRIVER family.
推薦
Server & Datacom Synchronous Rectifiers
The BSC093N15NS5 is well-suited as a synchronous rectifier in 48V-to-POL converters for hyperscale datacenters because its 9.3mOhm RDS(on) reduces secondary-side conduction loss in high-current rails (60-100A), improving overall converter efficiency from 96% to over 98% versus Schottky diodes. Its low Qg supports 200-500kHz switching typical of modern LLC and hard-switched buck topologies. Used as the low-side or secondary-side SR MOSFET, it enables higher power density in 48V bus converters.
推薦
eMobility / E-bike Battery Protection
The BSC093N15NS5 serves in e-mobility battery protection FETs for 36-72V e-bike and light-EV packs where its 150V rating exceeds the worst-case transient during regen braking, and its 9.3mOhm RDS(on) limits voltage drop to under 50mV at 30A continuous, preserving usable pack capacity. Low Qg reduces short-circuit trip time, improving fault response with a battery management IC. Placed in the discharge path between pack and load, it provides both protection and main disconnect functionality.
推薦
Industrial SMPS Secondary-Side Rectification
The BSC093N15NS5 acts as the secondary-side synchronous rectifier in industrial SMPS where 150V VDS is sufficient for 24-48V output rails with adequate transient margin, and its 9.3mOhm RDS(on) delivers >2% efficiency gain over Schottky diode replacements at full load. The OptiMOS™5 low FOM allows operation at 200-400kHz without prohibitive switching loss. Used in forward and LLC converter secondaries, it enables smaller magnetics and higher overall power density.
推薦
推薦產品摘要
工程參考資料，適用於 BSC093N15NS5 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | BSC093N15NS5SCATMA1 | BSC093N15NS5ATMA1 | STP093N15 |
|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics |
| VDS (V) | 150 V | 150 V | 150 V | 150 V |
| Technology | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 5 | STripFET / ST proprietary |
| Top-Side Cooling | No (standard) | Yes (SC variant) | No | No |
主要差異化特點
- Lowest RDS(on)*Qg figure of merit in 150V class (對比STP093N15)
- Dual-side cooled variant available in same footprint (對比BSC093N15NS5SCATMA1)
- Kelvin-source pin for clean gate drive (對比Standard 8-pin PowerPAK or DFN packages)
設計說明
Estimated: at ID=50A continuous and RDS(on)=10 mOhm (typical at Tj=100C), conduction loss is approximately 25 W. With a SuperSO8 5x6 footprint thermal resistance of ~50 C/W on a 1 oz copper 1 sq inch pad, junction temperature rises roughly 50 C above ambient. Add 2-4 sq inches of top-side copper on inner/outer layers, or use multiple thermal vias under the exposed pad, to keep Tj below 125 C at maximum ratings.
Use a Kelvin-source connection by routing the gate driver return trace directly to pin 2 (Kelvin source), not to the power-source copper. This separates the gate-drive loop from the high-current power loop, dramatically reducing source-inductance-induced gate-oscillation at high di/dt. Place the input capacitor and gate-driver within 5 mm of the package, and use wide copper pours (≥2 mm) on drain and source for current handling.
The PG-TDSON-8-7 package has 7 source pins bonded in parallel plus the exposed drain pad; treat the source as a wide low-impedance plane on layer 2 (just under the top copper). Use a 4-layer PCB with continuous ground/return plane to minimize parasitic inductance. Avoid routing signal or gate traces across the drain copper split, which can couple switching noise into the gate drive.
Do not exceed VGS of ±20 V absolute maximum; a gate-drive spike from parasitic inductance in a poorly clamped driver can punch through the oxide. Add a 10 kOhm gate-source resistor to prevent floating-gate turn-on during power-up, and a small RC snubber (10 ohm + 1 nF) between gate-source if the layout has long gate traces. Verify peak VDS in worst-case switching (e.g., inductive kickback) does not exceed 150 V - add a TVS or RC snubber if needed.
合規資訊
RoHS and halogen-free compliant per Infineon product page. Standard grade - not AEC-Q100 qualified. For automotive applications use the -Q1 suffix variant if available.
