BSC093N15NS5 - 150V 9.3mΩ OptiMOS™5 N-Ch MOSFET | Infineon
MPN: BSC093N15NS5 ✓ Hoạt độngBSC093N15NS5 Tóm tắt
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate to conduct current between the drain and source terminals. OptiMOS™ 5 represents Infineon's fifth-generation 150 V platform, optimized for low FOM (Figure of Merit, the product of RDS(on) and total gate charge Qg) to minimize switching and conduction losses simultaneously. In the broader taxonomy, MOSFETs sit within discrete semiconductors, alongside IGBTs, diodes, and transistors, and are foundational to switching power conversion, motor control, and load management circuits.
Key features include a 150 V drain-source breakdown voltage, 9.3 mOhm maximum on-resistance at VGS=10 V, low gate charge for reduced driver losses, and an integrated source-connected Kelvin-source pin configuration in the SuperSO8 5x6 package that lowers parasitic source inductance and improves switching performance at high di/dt. The PG-TDSON-8-7 footprint offers an exposed top-side coolable thermal pad, enhancing thermal transfer.
The BSC093N15NS5 uses a trench-gate OptiMOS™ 5 cell architecture that delivers a low RDS(on)*Qg figure of merit, enabling reduced switching losses in hard-switched topologies and allowing operation at higher switching frequencies without the efficiency penalty seen in older planar MOSFET generations.
Typical applications include telecom 48 V hot-swap and OR-ing circuits, solar inverters, low-voltage drives such as forklifts and e-scooters, server and datacom synchronous rectifiers, and industrial SMPS secondary-side rectification where high current handling and low conduction loss are required.
When designing with this device, ensure that the gate drive voltage swings cleanly between 0 V and 10 V; partial gate enhancement increases RDS(on) and conduction loss. The exposed pad must be soldered to a sufficiently large copper area to keep the junction temperature within the 150 C maximum rating.
This page synthesizes distributor stock and pricing data, parametric drop-in alternatives, and design notes not aggregated on any single manufacturer page, providing a one-stop engineering reference for the BSC093N15NS5.
Bộ thay thế dễ dàng lắp đặt cho BSC093N15NS5 — cùng gói, chân-to-chân tương thích. Các bộ phận yêu cầu hàn PCB bị loại trừ.
Các biến thể trong loạt này
Các mẫu cùng loạt có thể lắp đặt dễ dàng tương thích với BSC093N15NS5 (cùng hình factor và footprint) — khác nhau ở Package, Technology.
BSC093N15NS5SCATMA1
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC093N15NS5ATMA1
✅ Drop-InLiên hệ để biết giá
Xem tài liệu →STP093N15
✅ Drop-In📋 Tham chiếu thay thế (không có trong danh mục)
BSC093N15NS5 Tỷ lệ tối đa & tính chất điện
| Manufacturer | Infineon Technologies |
| Part Number | BSC093N15NS5 |
| Technology | OptiMOS™ 5 |
| Polarity | N-Channel |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at Tc | 87 A |
| On-Resistance RDS(on) max at VGS=10V | 9.3 mOhm |
| Power Dissipation (Tc) | 139 W |
| Hộp | PG-TDSON-8-7 (SuperSO8 5x6) |
| Kiểu lắp đặt | Surface Mount |
| Khoảng nhiệt độ hoạt động | -55C to +150C |
| Trạng thái RoHS | Compliant |
| AEC-Q100 Automotive Qualified | Not qualified (standard grade) |
Cấu hình chân BSC093N15NS5
| Chân 1 | Gate — Gate drive input |
| Chân 2 | Source — Source connection (Kelvin source) |
| Chân 3 | Source — Source connection |
| Chân 4 | Source — Source connection |
| Chân 5 | Source — Source connection |
| Chân 6 | Source — Source connection |
| Chân 7 | Drain — Drain connection |
| Chân 8 | Drain — Drain connection |
| Chân PAD | Drain (Exposed Pad) — Drain / thermal pad (solder to PCB copper) |
Ứng dụng tiêu biểu
BSC093N15NS5 phù hợp cho 6 Áp dụngs: Telecom 48V Hot-Swap & OR-ing, Solar Inverter MPPT Stage, Low-Voltage Industrial Drives (Forklift / E-scooter), Server & Datacom Synchronous Rectifiers, eMobility / E-bike Battery Protection, Industrial SMPS Secondary-Side Rectification.
Telecom 48V Hot-Swap & OR-ing
The BSC093N15NS5 fits telecom 48V hot-swap and OR-ing circuits because its 150V VDS rating provides more than 3x margin over the 48V bus, while 9.3mOhm RDS(on) keeps conduction loss below 5W at 100A peak inrush events. Its low Qg enables fast turn-on/turn-off required for inrush limiting and reverse-current blocking. Placed on the high-side with a hot-swap controller, the MOSFET handles continuous OR-ing duty with thermal headroom in 1U rack server PSUs.
Được đề xuất
Solar Inverter MPPT Stage
The BSC093N15NS5 suits solar inverter MPPT and DC-DC boost stages because its 150V breakdown covers 96V PV strings with margin for ringing, and its 9.3mOhm RDS(on) keeps conduction loss under 1% at 30-40A MPPT operating current. OptiMOS™5's low FOM allows switching at 50-100kHz with manageable driver losses. Used as the synchronous MOSFET in interleaved boost converters, it enables >98% peak efficiency in residential and commercial string inverters.
Được đề xuất
Low-Voltage Industrial Drives (Forklift / E-scooter)
The BSC093N15NS5 drives low-voltage industrial motor systems like 48-72V forklift traction and e-scooter controllers because its 150V VDS comfortably handles 24-72V battery rails with transients, and 87A continuous current supports peak motor demands up to 200A in pulse-mode with proper PCB layout. The SuperSO8 5x6 footprint saves board space vs TO-220 alternatives, enabling more compact IPM designs. Used in three-phase bridge or half-bridge configurations with a gate driver like the EiceDRIVER family.
Được đề xuất
Server & Datacom Synchronous Rectifiers
The BSC093N15NS5 is well-suited as a synchronous rectifier in 48V-to-POL converters for hyperscale datacenters because its 9.3mOhm RDS(on) reduces secondary-side conduction loss in high-current rails (60-100A), improving overall converter efficiency from 96% to over 98% versus Schottky diodes. Its low Qg supports 200-500kHz switching typical of modern LLC and hard-switched buck topologies. Used as the low-side or secondary-side SR MOSFET, it enables higher power density in 48V bus converters.
Được đề xuất
eMobility / E-bike Battery Protection
The BSC093N15NS5 serves in e-mobility battery protection FETs for 36-72V e-bike and light-EV packs where its 150V rating exceeds the worst-case transient during regen braking, and its 9.3mOhm RDS(on) limits voltage drop to under 50mV at 30A continuous, preserving usable pack capacity. Low Qg reduces short-circuit trip time, improving fault response with a battery management IC. Placed in the discharge path between pack and load, it provides both protection and main disconnect functionality.
Được đề xuất
Industrial SMPS Secondary-Side Rectification
The BSC093N15NS5 acts as the secondary-side synchronous rectifier in industrial SMPS where 150V VDS is sufficient for 24-48V output rails with adequate transient margin, and its 9.3mOhm RDS(on) delivers >2% efficiency gain over Schottky diode replacements at full load. The OptiMOS™5 low FOM allows operation at 200-400kHz without prohibitive switching loss. Used in forward and LLC converter secondaries, it enables smaller magnetics and higher overall power density.
Được đề xuất
Tóm tắt các sản phẩm được đề xuất
Dữ liệu tham khảo kỹ thuật cho BSC093N15NS5 — so sánh, hướng dẫn thiết kế và thông tin tuân thủ.
Hướng dẫn chọn lựa
So sánh với các sản phẩm thay thế
| Tham số | Sản phẩm này | BSC093N15NS5SCATMA1 | BSC093N15NS5ATMA1 | STP093N15 |
|---|---|---|---|---|
| Package | PG-TDSON-8-7 (SuperSO8 5x6) | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same | PG-TDSON-8-7 (SuperSO8 5x6) - same |
| Brand | Infineon | Infineon | Infineon | STMicroelectronics |
| VDS (V) | 150 V | 150 V | 150 V | 150 V |
| Technology | OptiMOS™ 5 | OptiMOS™ 5 | OptiMOS™ 5 | STripFET / ST proprietary |
| Top-Side Cooling | No (standard) | Yes (SC variant) | No | No |
Bảo phân biệt quan trọng
- Lowest RDS(on)*Qg figure of merit in 150V class (vsSTP093N15)
- Dual-side cooled variant available in same footprint (vsBSC093N15NS5SCATMA1)
- Kelvin-source pin for clean gate drive (vsStandard 8-pin PowerPAK or DFN packages)
Ghi chú thiết kế
Estimated: at ID=50A continuous and RDS(on)=10 mOhm (typical at Tj=100C), conduction loss is approximately 25 W. With a SuperSO8 5x6 footprint thermal resistance of ~50 C/W on a 1 oz copper 1 sq inch pad, junction temperature rises roughly 50 C above ambient. Add 2-4 sq inches of top-side copper on inner/outer layers, or use multiple thermal vias under the exposed pad, to keep Tj below 125 C at maximum ratings.
Use a Kelvin-source connection by routing the gate driver return trace directly to pin 2 (Kelvin source), not to the power-source copper. This separates the gate-drive loop from the high-current power loop, dramatically reducing source-inductance-induced gate-oscillation at high di/dt. Place the input capacitor and gate-driver within 5 mm of the package, and use wide copper pours (≥2 mm) on drain and source for current handling.
The PG-TDSON-8-7 package has 7 source pins bonded in parallel plus the exposed drain pad; treat the source as a wide low-impedance plane on layer 2 (just under the top copper). Use a 4-layer PCB with continuous ground/return plane to minimize parasitic inductance. Avoid routing signal or gate traces across the drain copper split, which can couple switching noise into the gate drive.
Do not exceed VGS of ±20 V absolute maximum; a gate-drive spike from parasitic inductance in a poorly clamped driver can punch through the oxide. Add a 10 kOhm gate-source resistor to prevent floating-gate turn-on during power-up, and a small RC snubber (10 ohm + 1 nF) between gate-source if the layout has long gate traces. Verify peak VDS in worst-case switching (e.g., inductive kickback) does not exceed 150 V - add a TVS or RC snubber if needed.
Thông tin tuân thủ
RoHS and halogen-free compliant per Infineon product page. Standard grade - not AEC-Q100 qualified. For automotive applications use the -Q1 suffix variant if available.
