CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments
MPN： CSD15571Q2 ✓ 啟用中CSD15571Q2 概覽
A power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in switching power supplies, load switches, and battery protection circuits, where efficient switching and low conduction losses are critical. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors.
Key features of the CSD15571Q2 include a low gate charge (Qg) for fast switching, a low thermal resistance enabling efficient heat dissipation, and a compact footprint that saves board space. The device is RoHS compliant and lead-free, meeting environmental standards. Its 20-V drain-source voltage rating and 22-A current capability make it ideal for low-voltage, high-current applications.
Technically, the CSD15571Q2 utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and reduced switching losses. The device has a maximum power dissipation of 2.5 W at 25°C, and its thermal performance is enhanced by the exposed pad in the WSON package. The gate threshold voltage is typically 1.1 V, allowing logic-level drive.
Typical applications include load switching in portable devices, DC-DC converter synchronous rectification, battery protection circuits, and power distribution in industrial systems. The low on-resistance minimizes conduction losses, while the small package enables compact designs.
When designing with this MOSFET, ensure adequate gate drive voltage to fully enhance the channel and minimize on-resistance. Also, consider the thermal path: the exposed pad should be soldered to a copper area for effective heat sinking, especially at high currents.
直接替換替代品，適用於 CSD15571Q2 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： CSD15571Q2 （相同外形與佔位） — 差異在於 Package.
CSD15571Q2
✅ 直接替換聯絡詢價
查看資料表 →CSD13302W
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →VBQG7313
✅ 直接替換📋 參考替代品（不在目錄中）
CSD15571Q2 最大額定值與電氣特性
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Id) | 22 A (Ta=25°C) |
| On-Resistance (Rds(on)) | 19.2 mΩ |
| Power Dissipation (Pd) | 2.5 W (Ta=25°C) |
| Gate Threshold Voltage (Vgs(th)) | 1.1 V (typical) |
| 封裝 | WSON (DQK) 6-pin, 2 mm x 2 mm |
| 安裝類型 | Surface Mount |
| Polarity | N-Channel |
| Number of Channels | 1 |
| Technology | NexFET |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
| Maximum Power Dissipation | 2.5 W |
CSD15571Q2 腳位配置
| 腳位 1 | G — Gate |
| 腳位 2 | S — Source |
| 腳位 3 | D — Drain |
| 腳位 4 | D — Drain |
| 腳位 5 | D — Drain |
| 腳位 6 | D — Drain |
安全工作區
典型應用
CSD15571Q2 適用於 6 應用s: Load Switching, DC-DC Converter Synchronous Rectification, Battery Protection, Power Distribution, Portable Electronics, Motor Control.
Load Switching
The CSD15571Q2 is ideal for load switching in portable devices, where its low on-resistance (19.2 mΩ) minimizes voltage drop and power loss. It can handle up to 22 A, making it suitable for high-current loads. The compact WSON package saves board space, and the logic-level gate threshold allows direct drive from microcontrollers. Ensure adequate gate drive voltage to fully enhance the channel and minimize conduction losses.
推薦
DC-DC Converter Synchronous Rectification
In synchronous buck converters, the CSD15571Q2 serves as the low-side MOSFET, providing low conduction losses due to its 19.2 mΩ Rds(on). Its 20-V rating is suitable for 12-V input rails. The fast switching capability, enabled by low gate charge, improves efficiency. Pair with a high-side MOSFET and a controller like the TPS54302DDCR for optimal performance.
推薦
Battery Protection
The CSD15571Q2 is well-suited for battery protection circuits in single-cell and multi-cell packs. Its 20-V drain-source voltage rating covers typical battery voltages, and the low on-resistance minimizes voltage drop, preserving battery life. The compact package is ideal for space-constrained designs. Ensure proper thermal management to handle high currents during fault conditions.
推薦
Power Distribution
For power distribution in industrial systems, the CSD15571Q2 provides efficient switching with low conduction losses. Its 22-A current rating handles high-power rails, and the 20-V rating is suitable for 12-V and 24-V systems with proper derating. The WSON package's exposed pad aids thermal dissipation. Use with a gate driver for optimal switching performance.
推薦
Portable Electronics
In portable electronics, the CSD15571Q2's small footprint and low on-resistance make it ideal for power management. It can switch high currents efficiently, extending battery life. The logic-level gate threshold simplifies interface with microcontrollers. Its RoHS compliance ensures environmental friendliness. Consider thermal constraints when designing for continuous high-current operation.
推薦
Motor Control
The CSD15571Q2 can be used in low-voltage motor control applications, such as brushed DC motors in toys or small appliances. Its 22-A current capability handles inrush currents, and the 20-V rating suits typical motor supply voltages. The fast switching reduces losses. Ensure proper gate drive and snubber circuits to manage inductive spikes.
推薦
推薦產品摘要
工程參考資料，適用於 CSD15571Q2 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | CSD13302W | VBQG7313 | FDD6512A |
|---|---|---|---|---|
| Package | WSON (DQK) 6-pin, 2 mm x 2 mm | WSON (DQK) 6-pin, 2 mm x 2 mm | WSON (DQK) 6-pin, 2 mm x 2 mm | TO-252-3 |
| Brand | Texas Instruments | Texas Instruments | VBsemi | onsemi |
| Drain-Source Voltage (Vds) | 20 V | 12 V | 30 V | 20 V |
| Continuous Drain Current (Id) | 22 A | 3.6 A | 12 A | 22 A |
| On-Resistance (Rds(on)) | 19.2 mΩ | 30 mΩ | 25 mΩ | 20 mΩ |
| Power Dissipation | 2.5 W | 1.5 W | 2.0 W | 3.8 W |
| Gate Threshold Voltage | 1.1 V | 1.0 V | 1.2 V | 1.5 V |
| RoHS Compliant | Yes | Yes | Yes | Yes |
主要差異化特點
- Low on-resistance of 19.2 mΩ (對比CSD13302W)
- Higher current rating of 22 A (對比VBQG7313)
- Compact WSON package (對比FDD6512A)
設計說明
The CSD15571Q2 has a maximum power dissipation of 2.5 W at 25°C. For continuous operation at high currents, ensure the exposed pad is soldered to a large copper area on the PCB to dissipate heat effectively. Use thermal vias to connect to inner layers. At 22 A, the power loss is approximately 9.3 W (I^2 * Rds(on)), which exceeds the package limit, so derating or parallel devices may be necessary.
Place the CSD15571Q2 close to the load or switching node to minimize parasitic inductance. Use wide, short traces for high-current paths. The gate drive trace should be kept short and away from high-current traces to reduce noise. A gate resistor may be added to control switching speed and reduce EMI.
Ensure the gate drive voltage is sufficient to fully enhance the channel. At Vgs=4.5V, Rds(on) is 19.2 mΩ, but at lower voltages, on-resistance increases significantly. Also, avoid exceeding the absolute maximum Vds of 20 V, as transients can cause breakdown. Use a snubber or TVS diode if necessary.
合規資訊
RoHS compliant and lead-free per TI product page. Other compliance data not specified in provided data.
