CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments
部品番号: CSD15571Q2 ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.38 | $3.80 |
| 100 | $0.29 | $29.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
CSD15571Q2 概要
A power MOSFET is a type of field-effect transistor designed to handle significant power levels. It operates by controlling the flow of current between the drain and source terminals through an electric field generated by the gate voltage. Power MOSFETs are essential components in switching power supplies, load switches, and battery protection circuits, where efficient switching and low conduction losses are critical. They are part of the broader family of discrete semiconductors, which also includes diodes, IGBTs, and thyristors.
Key features of the CSD15571Q2 include a low gate charge (Qg) for fast switching, a low thermal resistance enabling efficient heat dissipation, and a compact footprint that saves board space. The device is RoHS compliant and lead-free, meeting environmental standards. Its 20-V drain-source voltage rating and 22-A current capability make it ideal for low-voltage, high-current applications.
Technically, the CSD15571Q2 utilizes TI's NexFET technology, which optimizes the MOSFET structure to achieve low on-resistance and reduced switching losses. The device has a maximum power dissipation of 2.5 W at 25°C, and its thermal performance is enhanced by the exposed pad in the WSON package. The gate threshold voltage is typically 1.1 V, allowing logic-level drive.
Typical applications include load switching in portable devices, DC-DC converter synchronous rectification, battery protection circuits, and power distribution in industrial systems. The low on-resistance minimizes conduction losses, while the small package enables compact designs.
When designing with this MOSFET, ensure adequate gate drive voltage to fully enhance the channel and minimize on-resistance. Also, consider the thermal path: the exposed pad should be soldered to a copper area for effective heat sinking, especially at high currents.
ドロップイン代替品: CSD15571Q2 — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: CSD15571Q2 （同一形状・フットプリント） — 相違点: Package.
クイック比較ツール — 並列比較する代替部品を選択:
CSD15571Q2
✅ ドロップイン✓ 在庫あり
$0.19 / 個
データシートを見る →CSD13302W
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$0.19 / 個
データシートを見る →VBQG7313
✅ ドロップイン📋 参考代替品（カタログ未掲載）
CSD15571Q2 最大定格＆電気的特性
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Id) | 22 A (Ta=25°C) |
| On-Resistance (Rds(on)) | 19.2 mΩ |
| Power Dissipation (Pd) | 2.5 W (Ta=25°C) |
| Gate Threshold Voltage (Vgs(th)) | 1.1 V (typical) |
| パッケージ | WSON (DQK) 6-pin, 2 mm x 2 mm |
| 実装タイプ | Surface Mount |
| Polarity | N-Channel |
| Number of Channels | 1 |
| Technology | NexFET |
| RoHS ステータス | Compliant |
| Lead-Free | Yes |
| Maximum Power Dissipation | 2.5 W |
CSD15571Q2 ピン構成
| ピン 1 | G — Gate |
| ピン 2 | S — Source |
| ピン 3 | D — Drain |
| ピン 4 | D — Drain |
| ピン 5 | D — Drain |
| ピン 6 | D — Drain |
安全動作領域
主な用途
CSD15571Q2 の用途: 6 件s: Load Switching, DC-DC Converter Synchronous Rectification, Battery Protection, Power Distribution, Portable Electronics, Motor Control.
Load Switching
The CSD15571Q2 is ideal for load switching in portable devices, where its low on-resistance (19.2 mΩ) minimizes voltage drop and power loss. It can handle up to 22 A, making it suitable for high-current loads. The compact WSON package saves board space, and the logic-level gate threshold allows direct drive from microcontrollers. Ensure adequate gate drive voltage to fully enhance the channel and minimize conduction losses.
おすすめ
DC-DC Converter Synchronous Rectification
In synchronous buck converters, the CSD15571Q2 serves as the low-side MOSFET, providing low conduction losses due to its 19.2 mΩ Rds(on). Its 20-V rating is suitable for 12-V input rails. The fast switching capability, enabled by low gate charge, improves efficiency. Pair with a high-side MOSFET and a controller like the TPS54302DDCR for optimal performance.
おすすめ
Battery Protection
The CSD15571Q2 is well-suited for battery protection circuits in single-cell and multi-cell packs. Its 20-V drain-source voltage rating covers typical battery voltages, and the low on-resistance minimizes voltage drop, preserving battery life. The compact package is ideal for space-constrained designs. Ensure proper thermal management to handle high currents during fault conditions.
おすすめ
Power Distribution
For power distribution in industrial systems, the CSD15571Q2 provides efficient switching with low conduction losses. Its 22-A current rating handles high-power rails, and the 20-V rating is suitable for 12-V and 24-V systems with proper derating. The WSON package's exposed pad aids thermal dissipation. Use with a gate driver for optimal switching performance.
おすすめ
Portable Electronics
In portable electronics, the CSD15571Q2's small footprint and low on-resistance make it ideal for power management. It can switch high currents efficiently, extending battery life. The logic-level gate threshold simplifies interface with microcontrollers. Its RoHS compliance ensures environmental friendliness. Consider thermal constraints when designing for continuous high-current operation.
おすすめ
Motor Control
The CSD15571Q2 can be used in low-voltage motor control applications, such as brushed DC motors in toys or small appliances. Its 22-A current capability handles inrush currents, and the 20-V rating suits typical motor supply voltages. The fast switching reduces losses. Ensure proper gate drive and snubber circuits to manage inductive spikes.
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おすすめ製品の概要
エンジニアリング参考データ: CSD15571Q2 — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | CSD13302W | VBQG7313 | FDD6512A |
|---|---|---|---|---|
| Package | WSON (DQK) 6-pin, 2 mm x 2 mm | WSON (DQK) 6-pin, 2 mm x 2 mm | WSON (DQK) 6-pin, 2 mm x 2 mm | TO-252-3 |
| Brand | Texas Instruments | Texas Instruments | VBsemi | onsemi |
| Drain-Source Voltage (Vds) | 20 V | 12 V | 30 V | 20 V |
| Continuous Drain Current (Id) | 22 A | 3.6 A | 12 A | 22 A |
| On-Resistance (Rds(on)) | 19.2 mΩ | 30 mΩ | 25 mΩ | 20 mΩ |
| Power Dissipation | 2.5 W | 1.5 W | 2.0 W | 3.8 W |
| Gate Threshold Voltage | 1.1 V | 1.0 V | 1.2 V | 1.5 V |
| RoHS Compliant | Yes | Yes | Yes | Yes |
主な差別化要因
- Low on-resistance of 19.2 mΩ （vs CSD13302W)
- Higher current rating of 22 A （vs VBQG7313)
- Compact WSON package （vs FDD6512A)
設計ノート
The CSD15571Q2 has a maximum power dissipation of 2.5 W at 25°C. For continuous operation at high currents, ensure the exposed pad is soldered to a large copper area on the PCB to dissipate heat effectively. Use thermal vias to connect to inner layers. At 22 A, the power loss is approximately 9.3 W (I^2 * Rds(on)), which exceeds the package limit, so derating or parallel devices may be necessary.
Place the CSD15571Q2 close to the load or switching node to minimize parasitic inductance. Use wide, short traces for high-current paths. The gate drive trace should be kept short and away from high-current traces to reduce noise. A gate resistor may be added to control switching speed and reduce EMI.
Ensure the gate drive voltage is sufficient to fully enhance the channel. At Vgs=4.5V, Rds(on) is 19.2 mΩ, but at lower voltages, on-resistance increases significantly. Also, avoid exceeding the absolute maximum Vds of 20 V, as transients can cause breakdown. Use a snubber or TVS diode if necessary.
コンプライアンス情報
RoHS compliant and lead-free per TI product page. Other compliance data not specified in provided data.
