CSD15571Q2 - 20V N-Channel NexFET MOSFET | Texas Instruments
MPN: CSD15571Q2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.45 | $0.45 |
| 10 | $0.38 | $3.80 |
| 100 | $0.29 | $29.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
Drop-in alternatives for CSD15571Q2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
CSD15571Q2T
✅ Drop-In📋 Reference alternative (not in catalog)
CSD15571Q2Q1
✅ Drop-In📋 Reference alternative (not in catalog)
VBQG7313
✅ Drop-In📋 Reference alternative (not in catalog)
CSD15571Q2 Maximum Ratings & Electrical Characteristics
| Drain-Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Id) | 22 A (Ta=25°C) |
| On-Resistance (Rds(on)) | 19.2 mΩ |
| Power Dissipation (Pd) | 2.5 W (Ta=25°C) |
| Gate Threshold Voltage (Vgs(th)) | 1.1 V (typical) |
| Gate Charge (Qg) | [DATA_NEEDED: Gate Charge] |
| Package | WSON (DQK) 2x2 mm, 6 pins |
| Mounting Type | Surface Mount |
| Number of Channels | 1 |
| Polarity | N-Channel |
| Technology | NexFET |
| Operating Temperature Range | [DATA_NEEDED: Operating Temperature Range] |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| MSL Level | [DATA_NEEDED: MSL Level] |
CSD15571Q2 Pin Configuration
| Pin 1 | G — Gate |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | D — Drain |
| Pin 5 | D — Drain |
| Pin 6 | D — Drain |
Safe Operating Area
Typical Applications
CSD15571Q2 is suitable for 6 applications: Load Switching, DC-DC Converter Synchronous Rectification, Battery Protection, Power Distribution in Industrial Systems, Portable Electronics, LED Lighting.
Load Switching
The CSD15571Q2 is ideal for load switching in portable devices and power distribution. Its low on-resistance (19.2 mΩ) minimizes voltage drop and power loss, while the 22-A current rating handles high inrush currents. The small WSON package saves board space, and the logic-level gate threshold allows direct drive from microcontrollers. In a typical load switch circuit, the MOSFET is placed between the power source and the load, with the gate controlled by a GPIO. The low Rds(on) ensures efficient power delivery, and the fast switching speed reduces transition losses.
Recommended
DC-DC Converter Synchronous Rectification
In synchronous buck converters, the CSD15571Q2 serves as the low-side MOSFET, providing low conduction losses and fast switching. Its 20-V rating is suitable for 5V and 12V rails, and the 22-A current capability supports high-output-current designs. The low gate charge enables efficient high-frequency operation, reducing switching losses. When used with a high-side MOSFET and a controller, the CSD15571Q2 improves converter efficiency by minimizing the voltage drop across the rectifier. Proper layout with short, wide traces is essential to minimize parasitic inductance.
Recommended
Battery Protection
The CSD15571Q2 is well-suited for battery protection circuits in lithium-ion battery packs. Its low on-resistance (19.2 mΩ) minimizes voltage drop and heat generation during high-current discharge, while the 20-V rating accommodates multi-cell configurations. The compact WSON package fits space-constrained battery management systems. In a protection circuit, the MOSFET is placed in series with the battery and load, controlled by a protection IC. The low Rds(on) ensures efficient power delivery, and the fast switching capability allows quick disconnection during overcurrent or overvoltage events.
Recommended
Power Distribution in Industrial Systems
In industrial power distribution, the CSD15571Q2 can be used for load switching and protection in 12V or 24V systems. Its 20-V rating is suitable for 12V rails, and the 22-A current capability handles moderate loads. The low on-resistance reduces power dissipation, and the small package allows high-density PCB layouts. The device's fast switching speed enables efficient PWM control for applications like motor drives or LED lighting. Thermal management is critical; the exposed pad should be soldered to a copper area to dissipate heat effectively.
Recommended
Portable Electronics
The CSD15571Q2 is ideal for portable electronics such as smartphones, tablets, and wearables, where space and efficiency are critical. Its compact WSON package (2x2 mm) saves board area, and the low on-resistance (19.2 mΩ) minimizes power loss, extending battery life. The 22-A current rating supports high-power applications like fast charging. The logic-level gate threshold allows direct control from application processors or microcontrollers. In a typical design, the MOSFET is used for load switching or as a synchronous rectifier in a DC-DC converter, ensuring efficient power delivery.
Recommended
LED Lighting
The CSD15571Q2 can be used in LED lighting applications for switching and dimming control. Its low on-resistance (19.2 mΩ) minimizes power loss, and the 20-V rating is suitable for LED strings up to 12V. The fast switching speed enables PWM dimming at high frequencies without significant losses. The small package is ideal for compact LED drivers. In a typical LED driver, the MOSFET is used as a switch in a buck converter or as a linear dimming element. The low Rds(on) ensures efficient operation, and the thermal performance allows reliable operation in enclosed fixtures.
Recommended
Recommended Products Summary
Engineering reference data for CSD15571Q2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | CSD15571Q2T | CSD15571Q2Q1 | VBQG7313 |
|---|---|---|---|---|
| Package | WSON (DQK) 2x2 mm, 6 pins | WSON (DQK) 2x2 mm, 6 pins | WSON (DQK) 2x2 mm, 6 pins | WSON (DQK) 2x2 mm, 6 pins |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | VBsemi |
| Drain-Source Voltage (Vds) | 20 V | 20 V | 20 V | 30 V |
| Continuous Drain Current (Id) | 22 A | 22 A | 22 A | 12 A |
| On-Resistance (Rds(on)) | 19.2 mΩ | 19.2 mΩ | 19.2 mΩ | [DATA_NEEDED] |
| Power Dissipation (Pd) | 2.5 W | 2.5 W | 2.5 W | [DATA_NEEDED] |
| Gate Threshold Voltage (Vgs(th)) | 1.1 V | 1.1 V | 1.1 V | [DATA_NEEDED] |
| Automotive Grade | No | No | Yes (AEC-Q100) | No |
Key Differentiators
- Low on-resistance of 19.2 mΩ (vs VBQG7313)
- High continuous drain current of 22 A (vs VBQG7313)
- Automotive grade option available (vs CSD15571Q2Q1)
Design Notes
The CSD15571Q2 has a maximum power dissipation of 2.5 W at 25°C ambient. In high-current applications, ensure adequate PCB copper area and thermal vias under the exposed pad to dissipate heat. For example, at 10 A with Rds(on)=19.2 mΩ, power loss is about 1.92 W, which is within the limit but requires good thermal management to keep junction temperature below the maximum rating.
Place the MOSFET close to the load or switching node to minimize parasitic inductance. Use wide, short traces for drain and source connections to reduce resistance and inductance. The exposed pad should be soldered to a large copper area for heat sinking. Follow the layout guidelines in the TI application notes for NexFET MOSFETs.
Ensure the gate drive voltage is sufficient to fully enhance the channel. The gate threshold is 1.1 V typical, but for lowest Rds(on), drive with at least 4.5 V. Avoid exceeding the maximum Vgs rating (typically ±20 V). Also, consider the reverse recovery of the body diode in synchronous rectification applications.
Compliance Information
RoHS compliant and lead-free per TI product page. AEC-Q100 qualification is available on the CSD15571Q2Q1 variant.
