IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
MPN： IAUC60N06S5L073ATMA1 ✓ 啟用中IAUC60N06S5L073ATMA1 概覽
A power MOSFET is a voltage-controlled semiconductor switch that turns on when the gate-to-source voltage exceeds its threshold, allowing current to flow between drain and source with very low conduction loss. The OptiMOS 5 family from Infineon represents the latest generation of low-voltage trench MOSFETs optimised for synchronous rectification, DC-DC conversion, and motor drive stages where conduction and switching losses must both be minimised. The IAUC60N06S5L073ATMA1 specifically targets the 60 V rating window, sitting between sub-40 V logic-level FETs and higher-voltage 80-100 V parts.
Key features include 7.3 mΩ typical RDS(on) at VGS=10 V, an ultra-low figure-of-merit for switching applications, and a 17.4 nC total gate charge that supports high-frequency operation with reduced driver losses. The PG-TDSON-8-33 package provides a low thermal resistance path from the silicon die to the PCB, supporting the 52 W power dissipation rating at Tc. The part is qualified for automotive and industrial applications per JEDEC standards (JESD51-5, -7 as referenced in the manufacturer datasheet), making it suitable for safety-relevant systems.
Typical applications include 48 V automotive DC-DC converters, high-current synchronous rectification stages in telecom and server power supplies, LED driver output stages, ADAS (Advanced Driver Assistance Systems) power rails, and battery management systems. The combination of low on-resistance and low gate charge is particularly advantageous in point-of-load converters and USB-PD power stages.
When designing with this MOSFET, ensure the gate driver can source/sink the required peak current (QG switching losses dominate at high frequency) and keep the switching loop area minimal to control parasitic inductance. The exposed drain pad must be soldered to a sufficient copper pour to achieve the rated power dissipation.
直接替換替代品，適用於 IAUC60N06S5L073ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IAUC60N06S5L073ATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
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查看資料表 →ISC011N06LM5ATMA1
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查看資料表 →BSC0911NDATMA1
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查看資料表 →IAUC100N08S5N043ATMA1
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查看資料表 →BSC034N06NSATMA1
✅ 直接替換 ⚠️ 規格未經驗證聯絡詢價
查看資料表 →IAUC60N06S5L073ATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| 電晶體類型 | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Tj | 60 A |
| On-Resistance RDS(on) max | 7.3 mΩ |
| Total Gate Charge (QG) | 17.4 nC |
| Power Dissipation (PD) at Tc | 52 W |
| 封裝 | PG-TDSON-8-33 (5x6 mm) |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55C to +175C |
| Technology | Trench (OptiMOS 5) |
| 腳位數 | 8 |
| Configuration | Single N-Channel |
| Qualification | AEC-Q101 automotive grade |
| RoHS 狀態 | Compliant |
IAUC60N06S5L073ATMA1 腳位配置
| 腳位 1 | Gate — Gate control input |
| 腳位 2 | Drain — Drain connection (also exposed pad) |
| 腳位 3 | Source — Source connection |
| 腳位 4 | Source — Source connection (Kelvin) |
| 腳位 5 | Source — Source connection |
| 腳位 6 | Source — Source connection |
| 腳位 7 | Source — Source connection |
| 腳位 8 | Source — Source connection |
安全工作區 (DC)
典型應用
IAUC60N06S5L073ATMA1 適用於 6 應用s: 48V Automotive DC-DC Converter, ADAS Power Supply, LED Driver Output Stage, Telecom Brick Converter, Server VR Stage, Industrial Motor Drive.
48V Automotive DC-DC Converter
The IAUC60N06S5L073ATMA1 is ideally suited as both the high-side and low-side switch in 48 V automotive DC-DC converters, including mild-hybrid (MHEV) systems and 48 V point-of-load rails. Its 60 V VDS rating provides comfortable margin above the 48 V nominal bus (which can transient to 54 V during load dump), while the 7.3 mΩ RDS(on) minimises conduction loss in continuous-current operation. The 17.4 nC QG keeps switching losses manageable at 100-200 kHz switching frequencies typical in 48 V buck/boost stages. AEC-Q101 qualification ensures reliability in under-hood environments where ambient temperatures regularly exceed 85 C.
推薦
ADAS Power Supply
Advanced Driver Assistance Systems (ADAS) require clean, low-noise power rails for radar, camera, and lidar modules. The IAUC60N06S5L073ATMA1 in a synchronous buck topology delivers the high-current efficiency required to power multiple ADAS sensor rails from the 12 V or 48 V automotive bus. Its AEC-Q101 qualification, low RDS(on), and small PG-TDSON-8-33 footprint allow designers to place the converter physically close to the sensor module, reducing distribution losses. The part's 60 V VDS also protects against load-dump transients on the 12 V bus that can briefly spike beyond 40 V.
推薦
LED Driver Output Stage
High-brightness LED drivers for automotive headlamps and industrial lighting benefit from the IAUC60N06S5L073ATMA1's low conduction loss and high switching capability. In buck and boost LED driver topologies, the FET switches at 100-500 kHz to keep inductor size small while delivering multi-amp currents to LED strings. The 7.3 mΩ RDS(on) keeps the FET cool even at continuous 10-15 A LED current, eliminating the need for bulky heatsinks in compact headlamp assemblies. The PG-TDSON-8-33 package's exposed pad enables direct PCB cooling via copper pour.
推薦
Telecom Brick Converter
Isolated DC-DC bricks for telecom and networking equipment (typically 48 V input to 12 V, 5 V, or 3.3 V output) commonly use the IAUC60N06S5L073ATMA1 as the primary-side synchronous rectifier switch. Its 60 V rating exceeds the 48 V nominal bus plus transient margin, while the low QG supports 200-500 kHz switching frequencies that shrink magnetic component size. The part's high current capability (60 A) allows a single FET to handle 500-1000 W brick converter power levels, simplifying the primary-side design and reducing BOM cost.
推薦
Server VR Stage
Server voltage regulator (VR) stages that convert 48 V bus to core voltages for CPUs, GPUs, and ASICs benefit from the IAUC60N06S5L073ATMA1's high-current capability and low figure-of-merit. In multi-phase buck topologies, each phase can use a single IAUC60N06S5L073ATMA1 for the high-side switch, with the low-side implemented by a similar OptiMOS 5 part. The 17.4 nC QG enables switching frequencies of 300-500 kHz per phase, allowing high power density. AEC-Q101 qualification provides reliability margin for 24/7 server operation.
推薦
Industrial Motor Drive
Industrial motor drives, robotics, and factory automation equipment use the IAUC60N06S5L073ATMA1 in 3-phase inverter bridges driving brushless DC (BLDC) and permanent magnet synchronous motors (PMSM). With a 60 V rating, the FET is well-matched to 24-48 V DC bus systems powering low-voltage servo motors and small industrial drives. The 60 A continuous current rating supports motors up to several kilowatts. The PG-TDSON-8-33 surface-mount package allows automated assembly and compact PCB layouts in space-constrained motor control boards.
推薦
推薦產品摘要
工程參考資料，適用於 IAUC60N06S5L073ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IAUCN04S7L006ATMA1 | IAUC80N04S6N036ATMA1 | ISC011N06LM5ATMA1 | BSC0911NDATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-33 (5x6 mm) | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| VDS (max) | 60 V | 40 V | 40 V | 60 V | 60 V |
| RDS(on) max | 7.3 mΩ | 6 mΩ | 3.6 mΩ | 1.1 mΩ | 9.1 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Automotive Qualified | Yes (AEC-Q101) | Yes | Yes | Yes | Yes |
主要差異化特點
- Lowest RDS(on) x QG figure-of-merit in OptiMOS 5 60 V family (對比BSC0911NDATMA1)
- Automotive AEC-Q101 qualified in the same TDSON-8 footprint (對比IAUC100N08S5N043ATMA1)
- Higher current rating than lower-voltage OptiMOS variants (對比IAUCN04S7L006ATMA1)
設計說明
At continuous 60 A drain current, conduction loss alone is I^2 x RDS(on) = 60^2 x 0.0073 = ~26 W. With PG-TDSON-8-33 mounted on 1 sq inch of 2 oz copper, expected thermal resistance RθJA is approximately 50 C/W, giving 1300 C junction temperature rise above ambient - well above the 175 C limit. Estimated: for sustained 60 A operation, forced air cooling or larger copper area is mandatory. Practical continuous current at 25 C ambient is closer to 30-40 A.
Minimise the high-side/low-side switching loop area between drain and source to control parasitic inductance. The exposed drain pad must be soldered to a continuous copper pour that covers at least 1 sq inch of board area on the top layer, plus thermal vias to inner copper planes. Keep the gate drive loop separate from the power loop to avoid dv/dt-induced gate ringing. Use wide copper traces for source connection to reduce parasitic source inductance.
Do not exceed the 60 V VDS rating during switching transients - inductive kickback from the FET's own parasitics can overshoot the rail voltage by 20-30%. Add a TVS clamp or snubber if the switching node has high di/dt. Also, gate-source voltage must stay within +/-20 V; below -20 V the gate oxide can rupture. Use a gate-source resistor of 10-100 kΩ to hold the FET off during controller power-up.
合規資訊
AEC-Q101 automotive qualified per Infineon IAUC naming convention. RoHS compliant per distributor listings.
