IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
MPN： IAUZ30N10S5L240ATMA1 ✓ 啟用中IAUZ30N10S5L240ATMA1 概覽
An N-channel power MOSFET is a voltage-controlled majority-carrier device that uses a gate-source electric field to modulate conduction between drain and source terminals. Within the semiconductor hierarchy it belongs to discrete transistors → MOSFETs → power MOSFETs → low-voltage trench MOSFETs. OptiMOS 5 is Infineon's fifth-generation trench technology, which optimizes figure-of-merit (FOM = R<sub>DS(on)</sub> × Q<sub>g</sub>) for high-frequency switching and reduced conduction loss, replacing earlier planar and earlier-trench generations.
Key specifications include 100 V drain-source breakdown (V<sub>(BR)DSS</sub>), 24 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V (per the manufacturer datasheet), gate charge of 14 nC, and input capacitance of 832 pF at V<sub>DS</sub>=50 V. The PG-TSDSON-8-32 package provides a Kelvin-source connection and an exposed metal pad that simultaneously serves as the drain terminal and the primary thermal path to the PCB, enabling high current density in compact layouts. The part dissipates up to 45.5 W (Tc) under manufacturer-defined thermal conditions.
Typical applications include automotive 12 V/24 V load switching, high-side and low-side switches in DC-DC buck/boost converters, motor drive half-bridges for pumps and fans, and reverse-battery protection circuits. The 100 V rating also provides ample transient margin for 24 V systems that experience load-dump events. Compared with the previous OptiMOS 3 generation, the IAUZ30N10S5L240 reduces R<sub>DS(on)</sub> by approximately 30% at the same die size, reducing conduction loss and improving thermal performance.
When designing with this part, place gate-drive resistors close to the gate pin to limit ringing, and provide a 10 kΩ gate-source pull-down to prevent accidental turn-on during supply transients. The Kelvin-source pin must be bonded directly to the IC's source pad and to the gate-driver ground return to avoid source-induced gate-drive loss. This page synthesizes distributor pricing, drop-in alternatives, and PCB-level design notes beyond what appears in the manufacturer datasheet.
直接替換替代品，適用於 IAUZ30N10S5L240ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IAUZ30N10S5L240ATMA1 （相同外形與佔位） — 差異在於 Package, Automotive Qualification, Technology, Operating Temperature Range, Operating Junction Temperature.
IAUZ40N06S5L050ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUZ30N10S5L240ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUC100N08S5N043ATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC097N06NSATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUZ30N10S5L240ATMA1 最大額定值與電氣特性
| FET Type | N-Channel |
| Technology | OptiMOS 5 (trench) |
| Drain-Source Voltage (V_DS) | 100 V |
| Continuous Drain Current (I_D, Tc) | 30 A |
| R_DS(on) max at V_GS=10V | 24 mΩ |
| Gate-Source Voltage (V_GS) max | ±20 V |
| Gate Charge (Q_g) typ | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | 45.5 W |
| 封裝 | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55°C to +175°C (junction, automotive grade) |
| Automotive Qualification | AEC-Q101 qualified |
| RoHS 狀態 | Compliant |
IAUZ30N10S5L240ATMA1 腳位配置
| 腳位 1 | G — Gate — gate-drive input (10 V typical for full enhancement) |
| 腳位 2 | KS — Kelvin Source — connect to gate-driver ground return for low-loss gate drive |
| 腳位 3 | S — Source — main current return path |
| 腳位 4 | S — Source |
| 腳位 5 | S — Source |
| 腳位 6 | S — Source |
| 腳位 7 | S — Source |
| 腳位 8 | S — Source — bond pad adjacent to drain pad |
| 腳位 PAD | D — Drain — exposed metal pad, also primary thermal path |
安全工作區 (Tc=25°C, VGS=10V)
典型應用
IAUZ30N10S5L240ATMA1 適用於 6 應用s: Automotive 12V/24V Load Switching, DC-DC Buck/Boost Converter Power Stage, Motor Drive Half-Bridge (Pumps, Fans, BLDC), Reverse-Battery Protection (RBP) and OR-ing, Hot-Swap / In-Rush Current Limiting, LED Driver Power Switch (Automotive Lighting).
Automotive 12V/24V Load Switching
The IAUZ30N10S5L240ATMA1's 100 V V<sub>DS</sub> rating and AEC-Q101 qualification make it a strong fit for high-side and low-side load switching in 12 V and 24 V automotive body-electronics modules. Its 24 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V keeps conduction loss low enough that a 20 A continuous ECU load dissipates only ~9.6 W, manageable by the PG-TSDSON-8-32 exposed-pad footprint on 1 oz copper. The 100 V rating also provides ≥30 V margin above 24 V load-dump events per ISO 7637-2.
推薦
DC-DC Buck/Boost Converter Power Stage
The IAUZ30N10S5L240ATMA1 is well suited to the synchronous-rectifier and control-FET positions in 12 V-to-3.3 V/5 V buck converters used in automotive ECU power trees. Its 14 nC Q<sub>g</sub> supports switching frequencies up to ~500 kHz with acceptable driver loss, and its 24 mΩ R<sub>DS(on)</sub> balances conduction and switching loss at full load. The exposed-drain pad also acts as a heatsink, eliminating an external thermal solution.
推薦
Motor Drive Half-Bridge (Pumps, Fans, BLDC)
For automotive water pumps, oil pumps, cooling fans, and small BLDC actuators, the IAUZ30N10S5L240ATMA1 forms the low-side or high-side switch in a three-phase or half-bridge inverter. Its 30 A continuous rating covers single-digit-ampere motor windings with substantial peak surge headroom for inrush currents. The AEC-Q101 screening ensures reliability under the repetitive thermal cycling of motor-driven automotive environments from -40°C to +150°C ambient.
推薦
Reverse-Battery Protection (RBP) and OR-ing
In automotive ECUs that require reverse-battery and load-dump protection, the IAUZ30N10S5L240ATMA1 can be placed in series with the supply rail as a self-controlled reverse-blocking element. The 100 V V<sub>DS</sub> rating and the body's intrinsic diode handle the negative transient during a reverse-battery event. At 24 mΩ, the steady-state voltage drop is minimal (≈0.5 V at 20 A) compared to a Schottky-diode solution that would dissipate excessive power.
推薦
Hot-Swap / In-Rush Current Limiting
The IAUZ30N10S5L240ATMA1 can act as the pass element in a hot-swap controller for plug-in automotive or industrial modules. Driving the gate with a controlled current source or an RC ramp allows soft-start of large bulk capacitors, while the 30 A I<sub>D</sub> rating supports continuous operation at moderate load. The 100 V rating survives transients when the upstream rail is a 24 V industrial bus or 48 V mild-hybrid system stepped down for an auxiliary module.
推薦
LED Driver Power Switch (Automotive Lighting)
For matrix-LED headlamps, daytime running lights, and tail-lamp current drivers, the IAUZ30N10S5L240ATMA1 can serve as the high-side PWM switch that modulates string current. The fast switching speed supported by 14 nC Q<sub>g</sub> enables PWM dimming above the audible band (>200 Hz) without efficiency penalty, and AEC-Q101 qualification ensures photometric stability over the vehicle's lifetime. The 30 A rating covers multi-string LED modules up to ~100 W total.
推薦
推薦產品摘要
工程參考資料，適用於 IAUZ30N10S5L240ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IAUZ40N06S5L050ATMA1 | IAUC100N08S5N043ATMA1 | BSC097N06NSATMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TSDSON-8-32 | PG-TSDSON-8 (same family) | PG-TSDSON-8 family | PG-TSDSON-8 family |
| V_DS max | 100 V | 60 V | 80 V | 60 V |
| Continuous I_D | 30 A | 40 A | 100 A | 50 A |
| R_DS(on) max @ V_GS=10V | 24 mΩ | 5.0 mΩ | 4.3 mΩ | 9.7 mΩ |
| Automotive Qualified | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
主要差異化特點
- Optimized figure-of-merit for 100 V/30 A automotive switching (對比IAUZ40N06S5L050ATMA1)
- Higher continuous current than smaller-package OptiMOS 5 parts (對比IAUC100N08S5N043ATMA1)
- Drop-in compatible across the Infineon IAUZ/IAUC TSDSON-8 family (對比BSC097N06NSATMA1)
設計說明
Estimated: at continuous 30 A and R<sub>DS(on)</sub>=24 mΩ, the IAUZ30N10S5L240ATMA1 dissipates P = I² × R = 30² × 0.024 = 21.6 W. The PG-TSDSON-8-32 package has a typical θ<sub>JA</sub> in the 35–50 °C/W range when soldered to 1 oz copper of about 1 square inch; this yields a junction-temperature rise of roughly 760–1080 °C above ambient — clearly unacceptable. The exposed drain pad MUST be soldered to a copper pour of at least 1–2 square inches on inner PCB layers with thermal vias to achieve the rated 45.5 W (Tc) dissipation. Designers should always perform thermal simulation with the actual PCB stack-up before committing to layout.
Use a Kelvin-source connection (pin 2) tied directly to the gate-driver ground return, separate from the high-current source pad bond. This eliminates the source-inductance negative-feedback effect that slows switching edges and can cause false turn-on during high di/dt events. Place a 10 kΩ gate-to-source pull-down resistor on the PCB so the device stays off if the gate-driver output floats during power-up. Use wide source-trace copper and stitch the ground plane beneath the drain pad with multiple thermal vias (10+ vias, 0.3 mm drill) for low thermal resistance.
Common pitfalls with the IAUZ30N10S5L240ATMA1: (1) driving the gate from a non-automotive-grade gate driver with insufficient V<sub>GS</sub> headroom — Infineon specifies V<sub>GS</sub>=±20 V absolute maximum; (2) omitting TVS protection across drain-source for load-dump events even though 100 V V<sub>DS</sub> gives margin — inductive transients can exceed the rating during relay/coil turn-off; (3) assuming 5 V V<sub>GS</sub> drive is sufficient — OptiMOS 5 is optimized for 10 V gate drive, and 5 V drive can nearly double R<sub>DS(on)</sub>; (4) using the same gate-drive resistor value as a smaller FET — at 14 nC Q<sub>g</sub>, the gate-drive loop must be tuned for 30 A switching transients.
合規資訊
AEC-Q101 qualified (automotive discrete semiconductor standard, distinct from AEC-Q100 IC standard). RoHS and REACH compliant per Infineon product page. Conflict-minerals declaration available on Infineon.com.
