IPD053N08N3GATMA1 - 80V 90A OptiMOS 3 N-Channel MOSFET | Infineon
MPN： IPD053N08N3GATMA1 ✓ 啟用中IPD053N08N3GATMA1 概覽
An N-channel MOSFET (NMOS) is a four-terminal voltage-controlled device in which a positive gate-to-source voltage creates an inversion layer that conducts majority-carrier electrons between drain and source. N-channel MOSFETs offer lower on-resistance per unit silicon area than P-channel counterparts, which is why they dominate high-current switching applications. This part sits in the discrete-semiconductor hierarchy as: power MOSFET -> trench MOSFET -> N-channel trench MOSFET -> OptiMOS 3 family -> Infineon power-management portfolio.
Key features include a drain-source on-resistance (RDS(on)) of 5.3 mOhm at VGS=10 V (per the part number's leading-digit convention), an exceptionally low gate-charge x RDS(on) figure of merit (FOM), and superior thermal resistance enabled by the OptiMOS 3 trench process. The device is also designed for low gate charge, fast switching, and avalanche-rated single-pulse robustness, which simplifies snubber design in bridge topologies.
The OptiMOS 3 platform uses an advanced trench-cell architecture that minimizes cell pitch while maximizing channel density. This translates into lower conduction loss, reduced switching loss at 12-48 V bus voltages, and a smaller thermal footprint - all critical for high-frequency SMPS, synchronous rectification, and motor-drive half-bridges operating at 25-100 kHz.
Typical applications include solar micro-inverters, server and telecom power supplies, synchronous rectifiers in 48 V isolated DC-DC converters, electric-vehicle auxiliary loads, and high-current BLDC motor drives. The 80 V rating also gives comfortable margin on 48 V telecom rails and 60 V e-Mobility buses.
When designing with this MOSFET, pay close attention to gate-drive voltage: a 10 V VGS is required to achieve the rated RDS(on), and an external gate-driver IC is recommended for sub-microsecond transitions. Also ensure the PCB land pattern follows the JEDEC TO-252 footprint with a sufficiently large drain-tab copper pour to keep junction temperature within the 175 C absolute maximum.
直接替換替代品，適用於 IPD053N08N3GATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
IPD050N08N3GATMA1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
IPD053N06N3GATMA1
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
IPD90N08S4-06
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
IPD053N08N3GATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 3 |
| 電晶體類型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID, Tc) | 90 A |
| Power Dissipation (PD, Tc) | 150 W |
| Technology | Trench MOSFET |
| 封裝 | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount |
| 腳位數 | 3 (Drain, Gate, Source) + Tab |
| 工作溫度 | -55C to +175C (Tj) |
| RoHS 狀態 | Compliant |
| Packaging | Tape & Reel (T/R) |
| Qualification | Industrial Grade (MSL1 / MSL2 per JEDEC J-STD-020) |
IPD053N08N3GATMA1 腳位配置
| 腳位 1 | Gate — Gate control input (10 V drive recommended for full RDS(on)) |
| 腳位 2 | Drain — Drain connection (also bonded to metal tab; thermal pad) |
| 腳位 3 | Source — Source connection |
安全工作區 (DC, TC=25 C)
典型應用
IPD053N08N3GATMA1 適用於 6 應用s: Solar Micro-Inverters, 48 V Server and Telecom Isolated DC-DC Converters, Synchronous Rectifiers in 24-48 V Buck Converters, BLDC Motor Drives for Industrial Automation, Automotive 48 V Mild-Hybrid eMobility Loads, Hot-Swap and ORing Controllers in 48 V Distribution.
Solar Micro-Inverters
The IPD053N08N3GATMA1 is well suited to module-level solar micro-inverters converting 25-60 V photovoltaic input to 230 V AC mains. Its 80 V VDS gives comfortable margin above the 60 V eMPPT bus, the 90 A ID handles peak inverter switching currents with low conduction loss, and the OptiMOS 3 trench process delivers a low gate-charge x RDS(on) FOM that keeps switching loss in check at 50-100 kHz PWM. With a 10 V gate-driver the part achieves <50 ns rise/fall times in a HERIC or H-bridge topology, supporting >96% peak CEC efficiency.
推薦
48 V Server and Telecom Isolated DC-DC Converters
In 48 V telecom and hyperscale-server isolated DC-DC bricks, the IPD053N08N3GATMA1 is typically used on the primary-side full-bridge or push-pull switching node driving the isolation transformer. Its 80 V rating covers 48 V nominal plus transient overshoot, the 90 A ID allows 1-2 kW brick designs, and the OptiMOS 3 process minimizes body-diode reverse-recovery loss in hard-switched full-bridge topologies. Used with a digital isolator such as the 1ED3142MC12HXUMA1 it enables >100 W/inch^3 power density.
推薦
Synchronous Rectifiers in 24-48 V Buck Converters
As a low-side synchronous rectifier in 24-48 V buck or half-bridge converters, the IPD053N08N3GATMA1 cuts conduction loss compared to a Schottky diode at currents above ~10 A. The OptiMOS 3 family is optimized for body-diode ruggedness and dv/dt immunity, allowing dead-times as short as 20-30 ns without shoot-through. Combined with a digital PWM controller this delivers >98% peak efficiency at 48 V -> 12 V / 30 A conversion stages common in industrial and telecom point-of-load rails.
推薦
BLDC Motor Drives for Industrial Automation
The IPD053N08N3GATMA1 suits three-phase BLDC/PMSM motor drives in 24-60 V industrial automation such as AGVs, robotic arms, and small electric pumps. The 90 A ID supports 5-15 kW peak motor power, the 80 V VDS withstands back-EMF transients, and the low gate charge simplifies the bootstrap gate-drive design. Used in a 3-phase bridge with the 2ED21064S06JXUMA1 three-phase gate driver it produces a compact, high-efficiency inverter with sub-microsecond switching and reliable short-circuit protection.
推薦
Automotive 48 V Mild-Hybrid eMobility Loads
For 48 V mild-hybrid eMobility auxiliaries such as electric power-steering pumps and HVAC blowers, the IPD053N08N3GATMA1 (industrial grade) is a cost-effective choice when AEC-Q100 is not required. The 80 V VDS tolerates 48 V load-dump transients with adequate TVS clamping, and the DPAK package supports single-sided PCB mounting common in underhood ECUs. For fully automotive-qualified equivalents look for the corresponding Infineon OptiMOS part numbers with the Q-suffix.
推薦
Hot-Swap and ORing Controllers in 48 V Distribution
Hot-swap and ORing switches in 48 V telecom and server backplanes use the IPD053N08N3GATMA1 as the main pass element. Its 90 A ID covers 4-5 kW shelf-power rails, the 80 V VDS gives 1.6x transient margin over a 48 V bus, and the low RDS(on) minimizes steady-state voltage drop (under 50 mV at 30 A). Combined with a hot-swap controller and a TVS clamp it supports inrush-limited board insertion and fast ORing transitions under 5 microseconds.
推薦
推薦產品摘要
工程參考資料，適用於 IPD053N08N3GATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPD050N08N3GATMA1 | IPD053N06N3GATMA1 | IPP075N15N3GXKSA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO220-3 - different (through-hole) |
| Drain-Source Voltage (VDS) | 80 V | 80 V | 60 V | 150 V |
| Technology | OptiMOS 3 Trench | OptiMOS 3 Trench | OptiMOS 3 Trench | OptiMOS 3 Trench |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through-Hole |
| RoHS / Lead-Free | Yes / Yes | Yes / Yes | Yes / Yes | Yes / Yes |
主要差異化特點
- OptiMOS 3 trench process delivers best-in-class FOM (對比IPD053N06N3GATMA1)
- Surface-mount DPAK package for high-density designs (對比IPP075N15N3GXKSA1)
- Industrial-grade qualification at competitive price (對比ISZ056N03LF2SATMA1)
設計說明
At PD=150 W on the PG-TO252-3 (DPAK) package, the junction-to-ambient thermal resistance (theta_JA) on a JEDEC 1-square-inch single-sided copper pour is approximately 50 C/W. This means a 100 W continuous dissipation would push the junction 100 C above ambient. For continuous operation above ~50 W dissipation, add a drain-tab copper pour on both PCB layers with thermal vias, or upgrade to a TO-220 package variant. Estimated: theta_JA = 50 C/W on 1 in^2 2-oz copper, no airflow.
Follow the JEDEC TO-252 land pattern exactly. The metal tab (pin 2) MUST be soldered to the drain copper pour to achieve both the rated RDS(on) thermal path and the full current capability. Use thermal vias (typically 6-10 0.3 mm holes filled with solder) under the tab to conduct heat into the inner PCB copper plane. Do not route signal traces under the drain tab - they will couple switching noise into analog ground.
Keep the gate-drive loop area as small as possible - place the gate-driver IC within 5 mm of the gate pin and route the gate trace over a continuous ground plane. The high-side drain switching node requires wide copper pours to minimize parasitic inductance (target <5 nH). For hard-switched bridge topologies add a 100 nF ceramic + 10 uF electrolytic local bootstrap supply for the high-side gate driver.
Do not operate the part at VGS below 8 V - the OptiMOS 3 datasheet shows RDS(on) increases dramatically and the part may operate in the linear region causing thermal runaway. Always use a dedicated gate-driver IC (such as the 1EDN7136UXTSA1) rather than a microcontroller GPIO. Also avoid exceeding the dv/dt rating during bridge switching; if dv/dt is a concern add a small ferrite bead or 10 Ohm gate-source resistor.
合規資訊
RoHS compliant per Infineon product declaration. Industrial grade only - not AEC-Q100 qualified; for automotive select Infineon automotive-suffix variants.
