IPD031N06L3GATMA1 - 60V 100A 3.1mΩ N-Ch OptiMOS 3 MOSFET | Infineon
MPN： IPD031N06L3GATMA1 ✓ 啟用中IPD031N06L3GATMA1 概覽
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate structure (typically a metal-oxide layer, hence the name) to modulate current flow between drain and source terminals. MOSFETs sit within the broader hierarchy of discrete semiconductors and are the workhorse building block of switched-mode power conversion, motor control, and load switching. Within power MOSFETs, the N-channel enhancement-mode family dominates low-voltage (<200V) applications because N-channel carriers have roughly 2-3x higher mobility than P-channel, yielding lower RDS(on) for the same die area. The IPD031N06L3GATMA1's OptiMOS 3 platform is Infineon's third-generation optimized trench cell design, targeting 12V/24V/48V automotive and industrial rails.
Key specifications include a 60V drain-to-source breakdown (VDS), 3.1 mΩ maximum on-resistance at VGS=10V, and a low gate threshold around 1.0-2.2V that is fully enhanced at the standard 4.5V/10V logic-level drives. The part is rated for pulsed drain current of 400A (IDM) and offers excellent dv/dt ruggedness. Its PG-TO252-3 (DPAK) footprint enables direct compatibility with standard surface-mount assembly lines and provides a thermal path through the drain tab for heatsink attachment.
OptiMOS 3 uses an advanced trench cell geometry and a low-resistance substrate to minimize both conduction losses (RDS(on) × ID²) and switching losses (Qgd × VDS × fsw). This makes the device well suited for high-frequency SMPS, where total power loss determines thermal sizing and efficiency. The 167W power dissipation rating at TC=25°C assumes an infinite heatsink; on a 1 oz copper FR-4 PCB pad of approximately 1 cm², derating reduces usable dissipation to roughly 2-3W.
Typical applications include synchronous rectification in 12V/24V DC-DC converters, high-current load switches in automotive ECUs, motor drive H-bridges, battery management protection circuits, and hot-swap controllers. The 60V rating provides ample margin above 24V automotive transients and 48V mild-hybrid rails.
When designing with this MOSFET, pay close attention to gate-drive voltage: the device is fully enhanced at 10V VGS but exhibits significantly higher RDS(on) when driven at 4.5V. Always place the gate-source resistor (typically 10-100 kΩ) directly at the gate pin to prevent floating-gate turn-on during high dv/dt switching transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes drawn from the Infineon datasheet and application notes, providing engineering context not found in a single manufacturer PDF.
直接替換替代品，適用於 IPD031N06L3GATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPD031N06L3GATMA1 （相同外形與佔位） — 差異在於 Package, Technology, MSL Level, RoHS Status, Operating Temperature Range.
IPD031N06L3 G
✅ 直接替換📋 參考替代品（不在目錄中）
IPD034N06N3GATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC039N06NSATMA1
✅ 直接替換聯絡詢價
查看資料表 →BSC027N04LSGATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUZ30N06S5L140ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IAUC120N06S5L032ATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPT007N06NATMA1
✅ 直接替換聯絡詢價
查看資料表 →IPD031N06L3GATMA1 最大額定值與電氣特性
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 100 A |
| Pulsed Drain Current (IDM) | 400 A |
| Maximum Power Dissipation (PD) at TC=25°C | 167 W |
| RDS(on) Max at VGS=10V | 3.1 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V |
| Gate Drive Voltage (Max RDS(on)) | 4.5 V, 10 V |
| 工作溫度範圍 | -55°C to +175°C |
| 封裝 | PG-TO252-3 (DPAK) |
| 安裝類型 | Surface Mount |
| Series | OptiMOS 3 |
| MSL 等級 | 1 (Unlimited) |
| RoHS 狀態 | Compliant |
IPD031N06L3GATMA1 腳位配置
| 腳位 1 | Gate — Gate control input; drive with 4.5V (logic-level) or 10V (full enhancement) VGS |
| 腳位 2 | Drain — Power drain terminal; electrically connected to the mounting tab (heat sink connection) |
| 腳位 3 | Source — Power source terminal; return path for gate drive and load current |
安全工作區 (DC, TC=25°C)
典型應用
IPD031N06L3GATMA1 適用於 7 應用s: 12V/24V Synchronous Rectification, Automotive ECU Load Switching, BLDC Motor Drive H-Bridge, Battery Management Protection (BMS), Hot-Swap / Inrush Current Limiter, 48V Mild-Hybrid OR-ing and Redundancy, Industrial DC Load Switch.
12V/24V Synchronous Rectification
The IPD031N06L3GATMA1 excels as the low-side synchronous rectifier in 12V and 24V buck converters. Its 3.1 mΩ RDS(on) at VGS=10V yields approximately 0.31 W dissipation per 10A of output current (I²R), enabling efficiencies above 97% in 200-500 kHz designs. The 60V VDS rating provides ample margin above 24V automotive load-dump transients (≤35V). Place the gate-drive resistor (10-22Ω) directly at pin 1, and ensure the source pin returns to a low-impedance ground plane to minimize parasitic inductance that otherwise causes ringing on the gate during fast switching transitions.
推薦
Automotive ECU Load Switching
The IPD031N06L3GATMA1 is well matched to high-side and low-side load switching in automotive ECU applications such as solenoid drivers, headlamp relays, and HVAC blower control. Its 100A continuous rating handles peak inrush currents of injectors and motors, while the 60V VDS exceeds the 35V load-dump specification when paired with a TVS clamp. The -55°C to +175°C junction rating supports underhood environments. Use the part as a low-side switch with the drain tab connected to the load and source to ground, and gate driven by a 12V automotive-grade gate driver.
推薦
BLDC Motor Drive H-Bridge
In brushless DC motor drive H-bridges, the IPD031N06L3GATMA1 functions as the low-side or high-side switch in each half-bridge leg. The 3.1 mΩ RDS(on) limits conduction loss to roughly 1.5 W per MOSFET at 22A continuous phase current, enabling compact motor-drive PCB designs without external heatsinks for sub-100 W motors. The 400A pulsed rating tolerates motor stall currents. Pair the device with a 3-phase gate driver such as the DRV8242SQRHLRQ1, and use 10 kΩ gate-source pull-downs to prevent dv/dt-induced shoot-through.
推薦
Battery Management Protection (BMS)
The IPD031N06L3GATMA1 serves as the discharge FET in lithium-ion battery management systems for 12V-48V battery packs. Its 3.1 mΩ RDS(on) minimizes voltage drop during high-current discharge (e.g., 50A continuous), preserving usable battery capacity by roughly 2-3% compared to higher-RDS(on) alternatives. The 60V VDS withstands transient overvoltages during cell balancing faults. Mount the MOSFET on the PCB copper pour with thermal vias to the inner ground plane for 10-20W continuous dissipation capability in e-mobility applications.
推薦
Hot-Swap / Inrush Current Limiter
The IPD031N06L3GATMA1 is well suited as the main pass element in 12V-48V hot-swap controllers. Its 100A continuous and 400A pulsed ratings handle the inrush transients of large bulk capacitors during board insertion, while the 3.1 mΩ RDS(on) minimizes steady-state voltage drop. Operate the device in linear mode initially (during soft-start) and switch to fully-enhanced operation once the bus is stable. The drain tab can be bolted to a heatsink for sustained dissipation during the inrush event.
推薦
48V Mild-Hybrid OR-ing and Redundancy
In 48V mild-hybrid power systems, the IPD031N06L3GATMA1 functions as an OR-ing MOSFET in dual-battery redundancy architectures. Its 60V VDS rating is well-matched to 48V nominal buses (peak ~54V during regenerative braking), and the 3.1 mΩ RDS(on) at 100A limits conduction loss to 30W maximum. Mount two MOSFETs back-to-back (source-to-source) to block reverse current flow, and drive the gates with a dedicated OR-ing controller for fast (<1µs) switchover during source failures.
推薦
Industrial DC Load Switch
The IPD031N06L3GATMA1 functions as a robust DC load switch in industrial control systems such as PLC outputs, relay replacement, and solenoid drivers. Its 100A continuous current rating exceeds typical industrial load requirements (5-20A), providing substantial derating margin for long-term reliability. The 60V VDS handles 24V and 48V industrial bus transients, while the -55°C to +175°C junction rating supports wide industrial temperature environments. Use the part as a low-side switch driven directly by an optocoupler-isolated gate driver.
推薦
推薦產品摘要
工程參考資料，適用於 IPD031N06L3GATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPD031N06L3 G | IPD034N06N3GATMA1 | BSC039N06NSATMA1 | BSC027N04LSGATMA1 |
|---|---|---|---|---|---|
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| VDS Max | 60 V | 60 V | 60 V | 60 V | 40 V |
| Continuous Drain Current (TC=25°C) | 100 A | 100 A | 100 A | 100 A | 100 A |
| RDS(on) Max @ VGS=10V | 3.1 mΩ | 3.1 mΩ | 3.4 mΩ | 3.9 mΩ | 2.7 mΩ |
| Gate Threshold Voltage (VGS(th)) | 1.0 V to 2.2 V | 1.0 V to 2.2 V | 2.0 V to 3.5 V | 1.7 V to 2.7 V | 1.0 V to 2.2 V |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 | OptiMOS 5 | OptiMOS 5 |
主要差異化特點
- Lowest RDS(on) at 60V in DPAK from Infineon OptiMOS 3 family (對比IPD034N06N3GATMA1)
- Logic-level gate drive at 4.5V (對比BSC039N06NSATMA1)
- Proven OptiMOS 3 platform with extensive automotive track record (對比IPT007N06NATMA1)
- 60V VDS provides safety margin for 24V/48V industrial and automotive buses (對比BSC027N04LSGATMA1)
設計說明
The IPD031N06L3GATMA1's 167W power dissipation rating assumes TC=25°C with infinite heatsink. In typical surface-mount designs on 1 oz FR-4 copper with a 1 cm² drain pad, junction-to-ambient thermal resistance (RθJA) is approximately 50-62°C/W, limiting continuous dissipation to about 2.5-3 W. For applications dissipating more than 3 W, attach a small clip-on heatsink to the DPAK tab or expand the drain copper pour to at least 6 cm² with thermal vias to internal ground planes. Always verify junction temperature rise by monitoring the source pin temperature under worst-case load conditions and applying the RθJA × P_DISSIPATED formula.
Minimize parasitic source inductance by using short, wide traces from pin 3 (Source) to the system ground plane. Place the gate-drive resistor (typically 10-22 Ω) within 5 mm of the gate pin, and add a 10 kΩ gate-source pull-down resistor directly between pins 1 and 3 to prevent dv/dt-induced turn-on during fast switching transitions. The high di/dt loop formed by the input capacitor, drain, source, and ground must be kept physically small (area < 1 cm²) to limit ringing and overshoot. Use a 4-layer PCB with dedicated ground and power planes for designs exceeding 10 A continuous current.
Do not operate the device with VGS below 4.5 V if full RDS(on) specification is required. The 3.1 mΩ RDS(on) is specified at VGS=10V; at VGS=4.5V, RDS(on) may increase by 50-100%, negating the part's low-loss advantage. Also avoid exceeding the maximum VDS of 60V - even brief transients above 80V (such as unclamped inductive kickback) can permanently damage the MOSFET. Always include a TVS diode or snubber across inductive loads such as motors, solenoids, and transformers. Estimate: avalanche energy at inductive turn-off follows E = 0.5 × L × I²; verify this remains below the datasheet's single-pulse avalanche rating.
For surface-mount assembly, follow J-STD-020 reflow profiles with peak temperature not exceeding 260°C for MSL1 parts. The DPAK drain tab must be soldered to a copper pad of at least the same area as the package footprint (approximately 6×10 mm) to ensure proper thermal and electrical connection. Use a solder paste stencil of 0.15-0.20 mm thickness for the drain tab and 0.10-0.12 mm for the gate/source leads. Avoid placing thermal reliefs on the drain pad - they increase electrical and thermal resistance, defeating the purpose of the DPAK's tab design.
合規資訊
RoHS compliant per Infineon product page. Halogen-free per Infineon OptiMOS 3 series datasheet. AEC-Q100 qualification not explicitly stated for this part - consult Infineon automotive-grade part numbers for AEC-Q100 qualified variants.
