IPD180N10N3GATMA1 - 100V 43A 18mΩ OptiMOS 3 N-MOSFET | Infineon
MPN： IPD180N10N3GATMA1 ✓ 啟用中IPD180N10N3GATMA1 概覽
A power MOSFET is a voltage-controlled semiconductor switch that uses an electric field at the gate terminal to modulate current flow between drain and source. N-channel MOSFETs are the dominant choice in power electronics because the majority carriers are electrons, which yield lower on-resistance per unit area than P-channel equivalents. This device belongs to the power MOSFET -> discrete semiconductor -> semiconductor hierarchy, and is commonly used as the high-side or low-side switch in switching power topologies.
Key specifications include a drain-source breakdown voltage (VDS) of 100 V, a continuous drain current (ID) of 43 A at Tc=25°C, pulsed drain current support, and an ultra-low RDS(on) of 18 mΩ maximum at VGS=10 V. The OptiMOS™ 3 platform provides an excellent figure of merit (Qg × RDS(on)), which minimizes switching and conduction losses in high-frequency converters. The part is gate-oxide protected against ESD and is optimized for 10 V standard gate-drive levels typical of industrial driver ICs.
Typical applications include DC-DC converters (buck, boost, and synchronous rectification), motor drive H-bridges, solenoid and relay drivers, battery management systems for 24 V e-mobility and industrial packs, hot-swap and OR-ing controllers, and power-tool inverters. The 100 V rating provides ample margin for 48 V telecom rails and 24 V/36 V industrial battery systems.
When designing with the IPD180N10N3GATMA1, ensure that VGS(th) gate-drive margins are respected (full enhancement at 10 V) and that the DPAK PCB land pattern uses sufficient copper area to keep RDS(on) and thermal rise within safe limits. The exposed tab on pin 2 should be soldered to a thermally-optimized copper pour to maximize heat extraction.
This page synthesizes distributor pricing, drop-in alternatives, and practical PCB/thermal design notes not found in the manufacturer datasheet, giving engineers a one-stop reference for evaluating, sourcing, and laying out the IPD180N10N3GATMA1 in 24-48 V power systems.
直接替換替代品，適用於 IPD180N10N3GATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IPD180N10N3GATMA1 （相同外形與佔位） — 差異在於 Configuration, Technology.
IPD180N10N3G
✅ 直接替換📋 參考替代品（不在目錄中）
IPD90N10S4L-06
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
BSC076N04NDATMA1
✅ 直接替換聯絡詢價
查看資料表 →VBE1102N
✅ 直接替換📋 參考替代品（不在目錄中）
IRFR3711ZPBF
✅ 直接替換📋 參考替代品（不在目錄中）
STI45N10F7
✅ 直接替換📋 參考替代品（不在目錄中）
IPD180N10N3GATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Part Number | IPD180N10N3GATMA1 |
| Technology | OptiMOS™ 3 (N-channel power MOSFET) |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tc=25°C) | 43 A |
| Power Dissipation (Ptot, Tc=25°C) | 71 W |
| On-Resistance RDS(on) max @ VGS=10V | 18 mΩ |
| 封裝 | PG-TO252-3 (DPAK, SC-63) |
| 安裝類型 | Surface Mount |
| 工作溫度範圍 | -55°C to +175°C (Tj max 175°C) |
| Configuration | Single N-channel MOSFET |
| RoHS 狀態 | Compliant |
| Lead-Free | Yes |
| MSL 等級 | 1 (per Infineon package rating) |
| 無鹵素 | Yes (per Infineon OptiMOS 3 datasheet family) |
IPD180N10N3GATMA1 腳位配置
| 腳位 1 | Gate (G) — MOSFET gate terminal; 10V drive recommended for full enhancement |
| 腳位 2 | Drain (D) / Tab — MOSFET drain; exposed tab is electrically connected to drain - solder to PCB copper pour for thermal dissipation |
| 腳位 3 | Source (S) — MOSFET source terminal |
安全工作區 (SOA) - PG-TO252-3 (DPAK), Tj=175°C
典型應用
IPD180N10N3GATMA1 適用於 6 應用s: 24V Industrial DC-DC Converter (Buck), Battery Management System (BMS) Discharge Path, Brushless DC (BLDC) Motor Drive, Solar Inverter / Hot-Swap Controller, Power Tool / E-Bike Inverter, Synchronous Rectification in Isolated DC-DC.
24V Industrial DC-DC Converter (Buck)
The IPD180N10N3GATMA1 is ideal as the high-side or low-side switch in a 24 V input buck converter for industrial automation. Its 100 V VDS provides >3× safety margin above 24 V transients, while the 18 mΩ RDS(on) keeps conduction loss below 1% at 20 A output. Paired with a half-bridge driver and current-mode control, the OptiMOS™ 3 figure of merit (Qg × RDS(on)) minimizes switching loss at 100-300 kHz. Compared to using a 60 V part, the 100 V rating eliminates avalanche risk during inductive ringing on the switching node.
推薦
Battery Management System (BMS) Discharge Path
Used as the low-side discharge MOSFET in a 24 V or 36 V battery pack, the IPD180N10N3GATMA1's 43 A continuous rating covers high-C-rate LiFePO4 / NMC packs. The 100 V VDS tolerates full charge plus transient overshoot on multi-cell stacks. Its low RDS(on) reduces pack-level thermal load during sustained discharge, simplifying thermal management in e-mobility and industrial energy-storage applications.
推薦
Brushless DC (BLDC) Motor Drive
In a 24 V or 48 V three-phase BLDC motor drive, three IPD180N10N3GATMA1 MOSFETs form the inverter H-bridge. The 100 V rating handles back-EMF transients from motor inductance, and the 18 mΩ on-resistance keeps the I²R loss manageable without forced air cooling at 10-15 A continuous phase current. OptiMOS™ 3 body-diode ruggedness simplifies dead-time management in trapezoidal and FOC commutation schemes.
推薦
Solar Inverter / Hot-Swap Controller
In 48 V solar or telecom hot-swap / OR-ing applications, the IPD180N10N3GATMA1 serves as the OR-ing switch or inrush current limiter. Its 100 V VDS comfortably exceeds 48 V bus plus transient spikes, and the 18 mΩ RDS(on) keeps steady-state loss under 10 W at 25 A continuous. The DPAK package supports the necessary thermal copper pour for sustained operation, and the device's avalanche rating absorbs energy during load-dump events.
推薦
Power Tool / E-Bike Inverter
The IPD180N10N3GATMA1 is a strong fit for cordless power tool and e-bike inverters running from 18-36 V battery packs. The 100 V breakdown provides ample margin for motor back-EMF at high RPM, while the 18 mΩ RDS(on) supports 30-40 A peak currents for short-duration bursts (drill, saw loads) without overheating. DPAK footprint enables compact, fan-less PCB designs where the part's exposed tab dissipates directly to the inner copper layers.
推薦
Synchronous Rectification in Isolated DC-DC
Used as the secondary-side synchronous rectifier in an isolated 24-48 V to 5-12 V DC-DC converter, the IPD180N10N3GATMA1 replaces Schottky diodes to recover forward-voltage loss. Its OptiMOS™ 3 process gives ultra-low reverse-recovery charge, eliminating the voltage spike and ringing that plague diode-rectified secondaries. At 20 A output, the conduction loss is ~7.2 W versus ~10 W for a Schottky, improving overall converter efficiency by 1.5-3 percentage points.
推薦
推薦產品摘要
工程參考資料，適用於 IPD180N10N3GATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IPD180N10N3G | IPD90N10S4L-06 | BSC076N04NDATMA1 | VBE1102N | IRFR3711ZPBF | STI45N10F7 |
|---|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi | Infineon | STMicroelectronics |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) | TO-252 (DPAK) | TO-252 (DPAK) | TO-252 (DPAK) |
| Drain-Source Voltage VDS | 100 V | 100 V | 100 V | 40 V | 100 V | 100 V | 100 V |
| Continuous Drain Current ID | 43 A | 43 A | 90 A | 95 A | Similar to IPD180N10N3GATMA1 | 93 A | 45 A |
| RDS(on) max @ VGS=10V | 18 mΩ | 18 mΩ | ~6 mΩ | 7.6 mΩ | Similar (~18 mΩ) | 17 mΩ | 30 mΩ |
| Technology | OptiMOS™ 3 | OptiMOS™ 3 | OptiMOS-T2 | OptiMOS 5 | Trench N-ch | HEXFET | STripFET VII |
主要差異化特點
- OptiMOS™ 3 platform gives industry-leading Qg × RDS(on) figure of merit (對比STI45N10F7 (STripFET VII))
- Direct cross-brand drop-in replacement availability (VBE1102N) (對比VBE1102N)
- 100 V VDS provides >3× safety margin over 24 V bus (對比BSC076N04NDATMA1 (OptiMOS 5, 40 V))
- Higher continuous drain current at Tc=25°C than STI45N10F7 (對比STI45N10F7)
設計說明
Estimated: at ID=20 A continuous, RDS(on)=18 mΩ, the conduction loss is approximately P=I²R = 7.2 W. The PG-TO252-3 (DPAK) thermal resistance θJA on a standard 1-square-inch FR-4 PCB copper pour is roughly 50°C/W, yielding a junction temperature rise of 360°C - clearly excessive. Use a minimum 1 sq-in copper pour on the drain tab plus thermal vias to an internal plane, or attach a small heatsink to keep Tj below 125°C. At 10 A continuous the loss is only 1.8 W and a modest 0.5 sq-in pour suffices.
Lay out the DPAK land pattern per JEDEC TO-252 with the exposed thermal tab directly soldered to a copper pour of at least 0.5 sq-in for designs under 2 W dissipation, and 1.5+ sq-in for designs approaching 10 W. Add at least four thermal vias (0.3 mm drill, 1 mm pitch) under the tab to conduct heat to the inner plane. Keep the gate-trace short and away from the drain switching node to minimize parasitic gate-drain (Miller) coupling.
Do not exceed VGS=±20 V absolute maximum; drive at 10 V (logic-level not supported). Add a 10 kΩ gate-source pull-down resistor to prevent inadvertent turn-on during power-up transients when the gate driver is in high-impedance. Verify avalanche energy rating (EAS) for inductive-load applications; the IPD180N10N3GATMA1's body diode can typically absorb the energy from a 24 V/10 mH load at 1-2 A turn-off, but consult the datasheet's repetitive avalanche SOA for sustained operation.
Place the gate-drive components (driver IC, gate resistor, bootstrap capacitor) within 5 mm of the MOSFET's gate pin to minimize gate-loop inductance. Use a kelvin-source connection (separate source-sense trace) when switching >50 A peak to prevent source-inductance-induced VGS ringing. Keep the high-dV/dt switching node compact to limit radiated EMI; a small RC snubber (10 Ω + 1 nF) across the drain-source can dampen ringing above 50 MHz.
合規資訊
RoHS and REACH compliance per Infineon product page; lead-free matte-tin plating. Industrial-grade (no AEC-Q101 automotive qualification explicitly stated in verified data - verify with Infineon for automotive use cases).
