IR11682STRPBF - 200V Dual SmartRectifier SR Controller | Infineon
MPN： IR11682STRPBF ✓ 啟用中IR11682STRPBF 概覽
Key features include 200 V proprietary IC technology with 4 A peak turn-off drive current, 80 ns turn-off propagation delay for minimal dead-time losses, anti-bounce logic, and undervoltage-lockout (UVLO) protection. The micropower start-up and ultra-low quiescent current reduce standby losses below ENERGY STAR and 80 PLUS requirements. A 10.7 V gate-drive clamp protects standard-level MOSFETs from over-voltage gate stress.
The IR11682 uses direct VDS sensing on each MOSFET to detect conduction and turn-on/turn-off thresholds independently. Its dual-output architecture replaces two Schottky rectifiers with synchronous MOSFETs, reducing conduction loss by up to 70 percent in 12 V output rails and improving thermal performance in compact adapters.
Typical applications include LLC resonant converters for telecom rectifiers, server and gaming-PC silver-box SMPS, high-efficiency notebook adapters, and industrial DIN-rail power supplies. The IR11682STRPBF is well suited for any topology where Schottky or body-diode losses dominate at light load and high frequency.
When designing with this part, select MOSFETs with VDS ratings above the maximum secondary voltage plus transformer ringing margin. Place the gate drive loop area minimal, and use a low-ESR ceramic bypass at VCC within 2 mm of the IC pin.
This page synthesizes distributor pricing, parametric drop-in alternatives, and practical LLC layout guidance not found in the manufacturer datasheet alone.
直接替換替代品，適用於 IR11682STRPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
IR11682SPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IR11681STRPBF
✅ 直接替換📋 參考替代品（不在目錄中）
NCP4306DR2G
✅ 直接替換📋 參考替代品（不在目錄中）
SRK2001TR
✅ 直接替換📋 參考替代品（不在目錄中）
UCC24612-1DR
✅ 直接替換📋 參考替代品（不在目錄中）
IR11682STRPBF 最大額定值與電氣特性
| Product Type | Secondary-side synchronous rectifier controller |
| 拓撲 | Half-bridge, resonant (LLC) |
| 輸出數量 | 2 (dual) |
| Configuration | Half-bridge, dual high-side |
| Supply Voltage (Vcc) | 8.6 V to 18 V |
| Maximum Switching Frequency | 400 kHz |
| Peak Turn-Off Drive Current | 4 A |
| Turn-Off Propagation Delay | 80 ns |
| Gate Drive Clamp Voltage | 10.7 V (typ) |
| IC Technology | 200 V proprietary HVIC process |
| 工作溫度 | -40C to +125C (junction) |
| 封裝 | 8-SOIC (0.154 inch, 3.90 mm width) |
| 安裝類型 | Surface Mount |
| Packaging | Tape and Reel (TR) |
| Lead-Free / RoHS | Yes / Compliant (PBF suffix) |
IR11682STRPBF 腳位配置
| 腳位 1 | VD1 — Channel-1 drain-voltage sense input |
| 腳位 2 | VG1 — Channel-1 gate-drive output |
| 腳位 3 | VCC — Supply voltage (8.6 V to 18 V) |
| 腳位 4 | GND — Ground reference |
| 腳位 5 | VG2 — Channel-2 gate-drive output |
| 腳位 6 | VD2 — Channel-2 drain-voltage sense input |
| 腳位 7 | NC — Not connected (per datasheet) |
| 腳位 8 | NC — Not connected (per datasheet) |
典型應用
IR11682STRPBF 適用於 6 應用s: LLC Resonant Converter for Server SMPS, High-Efficiency Notebook Adapter, Telecom Rectifier Module, Industrial DIN-Rail Power Supply, Gaming PC Silver-Box SMPS, LED Driver High-Bay Luminaire.
LLC Resonant Converter for Server SMPS
The IR11682STRPBF's dual-output architecture drives two N-channel MOSFET rectifiers on the 12 V secondary of an LLC half-bridge, replacing Schottky diodes with synchronous MOSFETs to cut conduction losses 50-70 percent. With 400 kHz switching support and 80 ns turn-off delay, it sustains >97 percent efficiency in 600-1000 W server silver-box designs that must meet 80 PLUS Titanium targets. The 4 A peak gate drive handles 100 V-class MOSFETs without external booster stages.
推薦
High-Efficiency Notebook Adapter
Compact 65-150 W USB-PD adapters rely on the IR11682STRPBF to extract every watt from a 19 V LLC secondary rail. Its micropower start-up and ultra-low quiescent current let the adapter stay below 30 mW standby, satisfying EU CoC Tier-2 and DOE Level VI. The 8-SOIC footprint and 4 A peak gate drive fit comfortably beside two 40 V MOSFETs in adapters under 90 cc volume, with no heatsink required for the SR pair.
推薦
Telecom Rectifier Module
In 48 V-output telecom rectifier modules built around an LLC front-end, the IR11682STRPBF drives two high-current synchronous MOSFETs on the secondary side to push module efficiency above 96 percent at half load. The IC's 200 V proprietary process tolerates transformer ring spikes and reflected primary voltages without external TVS clamps. Anti-bounce logic prevents false turn-on from MOSFET body-diode ringing at the LLC valley transitions.
推薦
Industrial DIN-Rail Power Supply
Industrial 24 V/10 A DIN-rail supplies use the IR11682STRPBF to manage dual SR MOSFETs in a half-bridge LLC that operates across 85-265 VAC universal input. The wide Vcc range (8.6-18 V) accepts auxiliary-winding rails directly without extra LDO, while the 10.7 V gate clamp protects standard-level MOSFETs at low-line rectified bus conditions. Industrial temperature grade (-40 C to +125 C junction) supports outdoor cabinet mounting.
推薦
Gaming PC Silver-Box SMPS
High-wattage 850-1200 W gaming-PC power supplies pair the IR11682STRPBF with multi-phase LLC primaries to deliver the +12 V rail at >92 percent efficiency. Its 4 A peak turn-off drive handles the large Qg of low-RDS(on) MOSFETs used in 12 VHPWR connectors, minimizing dead-time and switching losses. Dual independent SR control allows separate optimization of 12 V and 5 V standby rails in the same converter stage.
推薦
LED Driver High-Bay Luminaire
High-bay 200-400 W LED luminaires use LLC converters with the IR11682STRPBF on the secondary side to drive high-current 36-48 V LED strings from universal AC mains. The IC's micropower consumption and direct VDS sensing allow the supply to meet the 0.5 W standby requirement for connected lighting, while the dual outputs drive parallel MOSFETs that share the load for better thermal spreading on a single aluminum-core PCB.
推薦
推薦產品摘要
工程參考資料，適用於 IR11682STRPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IR11682SPBF | IR11681STRPBF | NCP4306DR2G | SRK2001TR | UCC24612-1DR |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | onsemi | STMicroelectronics | Texas Instruments |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| Number of Outputs | 2 (dual) | 2 (dual) | 1 (single) | 1 (single) | 2 (dual) | 1 (single) |
主要差異化特點
- Highest peak turn-off drive current in 8-SOIC SR controllers (對比NCP4306DR2G)
- True dual-output architecture in single 8-SOIC (對比UCC24612-1DR)
- Industry-leading 400 kHz switching support (對比SRK2001TR)
設計說明
Keep the gate-drive loop (VG1/VD1 to MOSFET gate-source) area below 1 cm squared to minimize ringing and false triggering at 400 kHz. Place a 100 nF X7R bypass capacitor within 2 mm of the VCC pin to filter the 4 A peak turn-off transient. The VD sense traces should be Kelvin-connected directly to the MOSFET drain pad to avoid parasitic inductance that introduces turn-off delay variation.
Estimated: at VIN=400 VDC, VCC=12 V derived from an auxiliary winding, the IR11682STRPBF typically dissipates 0.3-0.5 W in steady state from gate charge and VCC quiescent. With 8-SOIC theta_JA near 150 C/W on a 1-oz 2-layer board, the junction rises 45-75 C above ambient. No heatsink is required, but copper flooding under the exposed pad area improves thermal performance in enclosed adapters.
Do not exceed the 200 V VD sense rating - clamp with a TVS diode if transformer ring spikes exceed 150 V. Anti-bounce logic prevents false turn-on at LLC valley crossings but requires that both MOSFETs have similar Cgd/Cgs ratios; mismatched parallel MOSFETs may need a small gate-source resistor (10-100 kohm) to suppress sub-threshold oscillation. Verify VCC UVLO release before MOSFET switching begins.
合規資訊
Lead-free (PBF suffix) and RoHS compliant per Infineon product markings. Halogen-free status not explicitly stated in retrieved web data; consult Infineon environmental compliance documentation. Not AEC-Q100 qualified - this part targets industrial and consumer power supplies, not automotive.
