IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
MPN： IR25606STRPBF ✓ 啟用中IR25606STRPBF 概覽
A half-bridge gate driver IC is a specialized power-management semiconductor that controls the high-side and low-side switches in a switching half-bridge. These drivers sit hierarchically between gate drivers, MOSFET/IGBT drivers, power management ICs, and semiconductors, translating low-power PWM logic signals into the high-current gate-drive waveforms required to switch high-voltage power devices efficiently and reliably.
Key features include integrated dead-time control that prevents cross-conduction, under-voltage lockout (UVLO) on both VCC and VB supplies, and matched propagation delays that simplify high-frequency PWM operation. The non-inverting input logic and single PWM input minimize firmware overhead. Combined, these features reduce BOM count by replacing discrete bootstrap diode and drive circuits with a single 8-pin IC.
The IR25606STRPBF uses Infineon's proprietary HVIC technology with latch-immune CMOS construction, providing ±2 kV HBM ESD tolerance and dV/dt immunity exceeding 50 V/ns. Internal shoot-through protection logic ensures that the high-side and low-side outputs cannot be simultaneously active, preventing catastrophic bridge short-circuits even under fault conditions or noisy input transitions.
Typical applications include switched-mode power supplies (SMPS), motor drive inverters for fans and pumps, electronic ballasts for HID and fluorescent lighting, and Class D audio amplifiers. The 600 V rating comfortably covers universal-input PFC front ends and 480 V industrial bus voltages when proper PCB clearance is observed.
When designing with this driver, select the bootstrap capacitor to supply at least 10x the gate charge of the high-side MOSFET per switching cycle, and place a 100 V ultrafast diode between VCC and VB to recharge the bootstrap. Always respect the minimum and maximum supply-voltage limits to avoid UVLO misbehavior or HVIC overstress.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
直接替換替代品，適用於 IR25606STRPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IR25606STRPBF （相同外形與佔位） — 差異在於 Package, Configuration, Number of Outputs.
IR25604STRPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IR25603STRPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IR25602STRPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IR2110SPBF
✅ 直接替換聯絡詢價
查看資料表 →IRS2003STRPBF
✅ 直接替換📋 參考替代品（不在目錄中）
NCP5106BDR2G
✅ 直接替換📋 參考替代品（不在目錄中）
IR25606STRPBF 最大額定值與電氣特性
| 功能 | Half-Bridge Gate Driver |
| Configuration | Non-Inverting, High-Side and Low-Side |
| Number of Drivers | 2 |
| 輸出數量 | 2 (High Side / Low Side) |
| Driven Configuration | Half-Bridge |
| High-Side Voltage (Offset) | Up to 600 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Logic Input Voltage | Compatible with 3.3 V and 5 V logic |
| Source Current (typ.) | 200 mA |
| Sink Current (typ.) | 350 mA |
| Input Type | Non-Inverting |
| Under-Voltage Lockout (UVLO) | Yes, on VCC and VB |
| Shoot-Through Protection | Integrated |
| 工作溫度 | -40 C to +125 C |
| 封裝 | 8-SOIC (0.154", 3.90 mm width) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
| Packaging | Tape and Reel (TR suffix) |
IR25606STRPBF 腳位配置
| 腳位 1 | VCC — Logic and low-side supply voltage (10 V to 20 V) |
| 腳位 2 | IN — Non-inverting PWM input (3.3 V/5 V logic compatible) |
| 腳位 3 | GND — Logic and low-side ground |
| 腳位 4 | NC — Not connected (per datasheet) |
| 腳位 5 | LO — Low-side gate drive output |
| 腳位 6 | VS — High-side floating supply return (boot return) |
| 腳位 7 | HO — High-side gate drive output |
| 腳位 8 | VB — High-side floating bootstrap supply |
典型應用
IR25606STRPBF 適用於 6 應用s: Switched-Mode Power Supplies (SMPS), Motor Drive Inverters (BLDC/PMSM), Electronic Ballasts (HID/Fluorescent), Class D Audio Amplifiers, Solar Micro-Inverters and String Inverters, Induction Heating Cooktops.
Switched-Mode Power Supplies (SMPS)
The IR25606STRPBF is a strong fit for offline and DC-DC SMPS half-bridge and full-bridge converters, where its 600V high-side offset rating comfortably covers universal-input PFC front ends at 85-265 VAC. The integrated shoot-through protection eliminates the dead-time generation burden from the controller, while 200 mA source / 350 mA sink drive currents switch mid-range MOSFETs and IGBTs at frequencies up to several hundred kHz. Place the IC adjacent to the power switches with short gate-drive traces, and size the bootstrap capacitor to at least 10x the high-side gate charge to prevent UVLO triggering at high duty cycles.
推薦
Motor Drive Inverters (BLDC/PMSM)
In three-phase BLDC and PMSM motor drives for industrial fans, pumps, and small appliances, the IR25606STRPBF serves as the half-bridge gate driver for each of the three inverter legs. The 600V rating handles 220 VAC and 380 VAC rectified bus voltages, while matched propagation delays across the three drivers preserve PWM timing accuracy. For higher-current motors, three IR25606STRPBF devices can drive three independent half-bridges using a single controller, with each driver's 350 mA sink current quickly turning off the IGBT to minimize switching losses.
推薦
Electronic Ballasts (HID/Fluorescent)
The IR25606STRPBF drives the resonant half-bridge in electronic ballasts for fluorescent, HID, and UV-C lamp applications. Its integrated dead-time control and shoot-through protection prevent cross-conduction that would damage the resonant tank components, while the 200V-600V high-side rating covers 110V and 220V ballast designs. The non-inverting single PWM input simplifies connection to industry-standard ballast controller ASICs, and the 8-SOIC footprint keeps the driver close to the half-bridge MOSFETs for minimal parasitic inductance.
推薦
Class D Audio Amplifiers
In Class D audio amplifiers, the IR25606STRPBF drives the output full-bridge switches, delivering PWM-modulated audio from a single supply rail. The driver's matched propagation delays ensure left/right channel phase alignment critical for stereo imaging, while the 350 mA sink current prevents MOSFET body-diode conduction during dead time, reducing THD. The 8-SOIC footprint integrates into compact amplifier modules for soundbars, portable speakers, and automotive infotainment systems.
推薦
Solar Micro-Inverters and String Inverters
The IR25606STRPBF is well-suited to the DC-DC and DC-AC conversion stages of small solar micro-inverters and string inverters, where its 600V high-side rating covers 400V DC photovoltaic string voltages with margin. Two IR25606STRPBF devices can drive a full-bridge inverter stage, and the integrated UVLO on both VCC and VB supplies protects the system during low-irradiance morning startup when voltages may sag below regulation. The 8-SOIC footprint simplifies thermal layout on FR-4 PCBs.
推薦
Induction Heating Cooktops
In residential induction heating cooktops, the IR25606STRPBF drives the resonant half-bridge inverter at frequencies typically 20-100 kHz, switching high-current IGBTs or MOSFETs at the heating coil. The integrated shoot-through protection is critical in this topology because cross-conduction would cause catastrophic device failure and fire hazard. The 350 mA sink current handles the large gate charge of high-current IGBTs, and the 600V rating covers rectified 220 VAC mains with adequate safety margin.
推薦
推薦產品摘要
工程參考資料，適用於 IR25606STRPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | IR25604STRPBF | IR25603STRPBF | IR2110SPBF | NCP5106BDR2G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| High-Side Offset Voltage | 600 V | 600 V | 200 V | 600 V | 600 V |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Source Current (typ.) | 200 mA | 120 mA | 200 mA | 290 mA | 250 mA |
| Sink Current (typ.) | 350 mA | 250 mA | 350 mA | 600 mA | 500 mA |
| Input Logic | Single PWM, Non-Inverting | Single PWM, Non-Inverting | Single PWM, Non-Inverting | Separate HIN/LIN | Single PWM, Non-Inverting |
| Shoot-Through Protection | Integrated | Integrated | Integrated | No (external dead-time required) | Integrated |
| UVLO | Yes (VCC and VB) | Yes | Yes | Yes (VCC and VB) | Yes |
主要差異化特點
- Integrated shoot-through protection eliminates dead-time generation firmware overhead (對比IR2110SPBF)
- Single PWM input simplifies firmware interface (對比IR2110SPBF)
- 600V high-side offset in compact 8-SOIC (對比NCP5106BDR2G)
設計說明
Bootstrap capacitor sizing is critical for IR25606STRPBF high-side operation. Use the formula C_BOOT >= 10 x Q_G / (VCC - V_F - V_GS_MIN), where Q_G is the high-side MOSFET total gate charge, V_F is the bootstrap diode forward voltage (~1 V), and V_GS_MIN is the minimum gate-source voltage that keeps the MOSFET fully enhanced (~10 V for typical 12V VCC). At 100 kHz switching with a 50 nC Q_G MOSFET, this yields a minimum 0.1 µF ceramic (X7R) capacitor; in practice use 0.47 µF or 1 µF for margin. An ultrafast 100V diode (e.g. UF4007) between VCC and VB replenishes the bootstrap each low-side cycle.
Place the IR25606STRPBF within 10 mm of the driven MOSFETs or IGBTs to minimize gate-loop parasitic inductance, which otherwise causes ringing, EMI, and potential shoot-through. Use wide 0.5 mm copper traces for the gate-drive outputs (HO and LO) and Kelvin-connect the gate-driver GND to the source of the low-side switch at the power device, not at the global ground plane. Place the VCC bypass capacitor (≥1 µF ceramic) and the bootstrap capacitor directly at their respective IC pins, with vias placed to minimize parasitic inductance.
Do not exceed the 600 V high-side offset rating of the IR25606STRPBF - leave at least 50% derating for surge events, particularly in PFC front ends where bus voltages can overshoot. Never operate VCC below 10 V or the internal UVLO will disable both outputs simultaneously, potentially causing MOSFET cross-conduction during supply ramp. Always include a 100 V ultrafast bootstrap diode, never a slow rectifier, to ensure the bootstrap capacitor fully recharges during the short low-side on-time in high-frequency designs. Estimated: these design points are derived from standard half-bridge driver practice and the IR25606 datasheet electrical characteristics.
The IR25606STRPBF in 8-SOIC has a typical thermal resistance of θJA ~150 C/W on a standard 2-layer JEDEC test board. Maximum quiescent current consumption at 20 V VCC is ~5 mA, yielding worst-case 100 mW dissipation in the IC alone - thermal rise is negligible. However, gate-drive switching losses at high frequencies and large MOSFET gate charges can push the IC dissipation higher; ensure the SOIC ground pad has sufficient copper pour (recommended minimum 100 mm²) to keep junction temperature below 125 C. Estimated: thermal calculations based on standard SOIC-8 thermal resistance and quiescent current from datasheet.
合規資訊
RoHS compliance and lead-free status confirmed by PBF suffix in MPN per distributor datasheet. AEC-Q100 automotive qualification not listed on manufacturer product page - choose automotive-grade Infineon variants for vehicle applications. Halogen-free status not explicitly stated in available data.
