IR25606STRPBF - 600V Half-Bridge Gate Driver IC | Infineon
부품 번호: IR25606STRPBF ✓ 활성| 수량 | 단가 | 합계 |
|---|---|---|
| 1 | $2.53 | $2.53 |
| 10 | $2.15 | $21.50 |
| 100 | $1.72 | $172.00 |
| 500 | $1.35 | $675.00 |
| 1,000 | $1.05 | $1,050.00 |
IR25606STRPBF 개요
A half-bridge gate driver IC is a specialized power-management semiconductor that controls the high-side and low-side switches in a switching half-bridge. These drivers sit hierarchically between gate drivers, MOSFET/IGBT drivers, power management ICs, and semiconductors, translating low-power PWM logic signals into the high-current gate-drive waveforms required to switch high-voltage power devices efficiently and reliably.
Key features include integrated dead-time control that prevents cross-conduction, under-voltage lockout (UVLO) on both VCC and VB supplies, and matched propagation delays that simplify high-frequency PWM operation. The non-inverting input logic and single PWM input minimize firmware overhead. Combined, these features reduce BOM count by replacing discrete bootstrap diode and drive circuits with a single 8-pin IC.
The IR25606STRPBF uses Infineon's proprietary HVIC technology with latch-immune CMOS construction, providing ±2 kV HBM ESD tolerance and dV/dt immunity exceeding 50 V/ns. Internal shoot-through protection logic ensures that the high-side and low-side outputs cannot be simultaneously active, preventing catastrophic bridge short-circuits even under fault conditions or noisy input transitions.
Typical applications include switched-mode power supplies (SMPS), motor drive inverters for fans and pumps, electronic ballasts for HID and fluorescent lighting, and Class D audio amplifiers. The 600 V rating comfortably covers universal-input PFC front ends and 480 V industrial bus voltages when proper PCB clearance is observed.
When designing with this driver, select the bootstrap capacitor to supply at least 10x the gate charge of the high-side MOSFET per switching cycle, and place a 100 V ultrafast diode between VCC and VB to recharge the bootstrap. Always respect the minimum and maximum supply-voltage limits to avoid UVLO misbehavior or HVIC overstress.
This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
드롭인 대체품: IR25606STRPBF — 동일 패키지, 핀 호환. PCB 재작업이 필요한 다른 패키지 부품은 제외됩니다.
이 시리즈의 변형
다음과 드롭인 호환되는 동일 시리즈 모델: IR25606STRPBF (동일 폼 팩터 및 풋프린트) — 차이점: Package, Configuration, Number of Outputs.
빠른 비교 도구 — 나란히 비교할 대체 부품을 선택하십시오:
IR25604STRPBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IR25603STRPBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IR25602STRPBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IR2110SPBF
✅ 드롭인✓ 재고 있음
$1.98 / 개
데이터시트 보기 →IRS2003STRPBF
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
NCP5106BDR2G
✅ 드롭인📋 참조 대체품 (카탈로그에 없음)
IR25606STRPBF 최대 정격 & 전기적 특성
| 기능 | Half-Bridge Gate Driver |
| Configuration | Non-Inverting, High-Side and Low-Side |
| Number of Drivers | 2 |
| 출력 수 | 2 (High Side / Low Side) |
| Driven Configuration | Half-Bridge |
| High-Side Voltage (Offset) | Up to 600 V |
| Supply Voltage (VCC) | 10 V to 20 V |
| Logic Input Voltage | Compatible with 3.3 V and 5 V logic |
| Source Current (typ.) | 200 mA |
| Sink Current (typ.) | 350 mA |
| Input Type | Non-Inverting |
| Under-Voltage Lockout (UVLO) | Yes, on VCC and VB |
| Shoot-Through Protection | Integrated |
| 동작 온도 | -40 C to +125 C |
| 패키지 | 8-SOIC (0.154", 3.90 mm width) |
| 실장 유형 | Surface Mount |
| RoHS 상태 | Compliant (PBF suffix) |
| Lead-Free | Yes (PBF suffix) |
| Packaging | Tape and Reel (TR suffix) |
IR25606STRPBF 핀 구성
| 핀 1 | VCC — Logic and low-side supply voltage (10 V to 20 V) |
| 핀 2 | IN — Non-inverting PWM input (3.3 V/5 V logic compatible) |
| 핀 3 | GND — Logic and low-side ground |
| 핀 4 | NC — Not connected (per datasheet) |
| 핀 5 | LO — Low-side gate drive output |
| 핀 6 | VS — High-side floating supply return (boot return) |
| 핀 7 | HO — High-side gate drive output |
| 핀 8 | VB — High-side floating bootstrap supply |
일반적인 애플리케이션
IR25606STRPBF 적합 용도: 6 애플리케이션s: Switched-Mode Power Supplies (SMPS), Motor Drive Inverters (BLDC/PMSM), Electronic Ballasts (HID/Fluorescent), Class D Audio Amplifiers, Solar Micro-Inverters and String Inverters, Induction Heating Cooktops.
Switched-Mode Power Supplies (SMPS)
The IR25606STRPBF is a strong fit for offline and DC-DC SMPS half-bridge and full-bridge converters, where its 600V high-side offset rating comfortably covers universal-input PFC front ends at 85-265 VAC. The integrated shoot-through protection eliminates the dead-time generation burden from the controller, while 200 mA source / 350 mA sink drive currents switch mid-range MOSFETs and IGBTs at frequencies up to several hundred kHz. Place the IC adjacent to the power switches with short gate-drive traces, and size the bootstrap capacitor to at least 10x the high-side gate charge to prevent UVLO triggering at high duty cycles.
추천
Motor Drive Inverters (BLDC/PMSM)
In three-phase BLDC and PMSM motor drives for industrial fans, pumps, and small appliances, the IR25606STRPBF serves as the half-bridge gate driver for each of the three inverter legs. The 600V rating handles 220 VAC and 380 VAC rectified bus voltages, while matched propagation delays across the three drivers preserve PWM timing accuracy. For higher-current motors, three IR25606STRPBF devices can drive three independent half-bridges using a single controller, with each driver's 350 mA sink current quickly turning off the IGBT to minimize switching losses.
추천
Electronic Ballasts (HID/Fluorescent)
The IR25606STRPBF drives the resonant half-bridge in electronic ballasts for fluorescent, HID, and UV-C lamp applications. Its integrated dead-time control and shoot-through protection prevent cross-conduction that would damage the resonant tank components, while the 200V-600V high-side rating covers 110V and 220V ballast designs. The non-inverting single PWM input simplifies connection to industry-standard ballast controller ASICs, and the 8-SOIC footprint keeps the driver close to the half-bridge MOSFETs for minimal parasitic inductance.
추천
Class D Audio Amplifiers
In Class D audio amplifiers, the IR25606STRPBF drives the output full-bridge switches, delivering PWM-modulated audio from a single supply rail. The driver's matched propagation delays ensure left/right channel phase alignment critical for stereo imaging, while the 350 mA sink current prevents MOSFET body-diode conduction during dead time, reducing THD. The 8-SOIC footprint integrates into compact amplifier modules for soundbars, portable speakers, and automotive infotainment systems.
추천
Solar Micro-Inverters and String Inverters
The IR25606STRPBF is well-suited to the DC-DC and DC-AC conversion stages of small solar micro-inverters and string inverters, where its 600V high-side rating covers 400V DC photovoltaic string voltages with margin. Two IR25606STRPBF devices can drive a full-bridge inverter stage, and the integrated UVLO on both VCC and VB supplies protects the system during low-irradiance morning startup when voltages may sag below regulation. The 8-SOIC footprint simplifies thermal layout on FR-4 PCBs.
추천
Induction Heating Cooktops
In residential induction heating cooktops, the IR25606STRPBF drives the resonant half-bridge inverter at frequencies typically 20-100 kHz, switching high-current IGBTs or MOSFETs at the heating coil. The integrated shoot-through protection is critical in this topology because cross-conduction would cause catastrophic device failure and fire hazard. The 350 mA sink current handles the large gate charge of high-current IGBTs, and the 600V rating covers rectified 220 VAC mains with adequate safety margin.
추천
추천 제품 요약
엔지니어링 참조 데이터: IR25606STRPBF — 비교, 설계 지침 및 규정 준수 정보.
선택 가이드
대체품과의 비교
| 파라미터 | 이 제품 | IR25604STRPBF | IR25603STRPBF | IR2110SPBF | NCP5106BDR2G |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi |
| Package | 8-SOIC | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same | 8-SOIC - same |
| High-Side Offset Voltage | 600 V | 600 V | 200 V | 600 V | 600 V |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Source Current (typ.) | 200 mA | 120 mA | 200 mA | 290 mA | 250 mA |
| Sink Current (typ.) | 350 mA | 250 mA | 350 mA | 600 mA | 500 mA |
| Input Logic | Single PWM, Non-Inverting | Single PWM, Non-Inverting | Single PWM, Non-Inverting | Separate HIN/LIN | Single PWM, Non-Inverting |
| Shoot-Through Protection | Integrated | Integrated | Integrated | No (external dead-time required) | Integrated |
| UVLO | Yes (VCC and VB) | Yes | Yes | Yes (VCC and VB) | Yes |
주요 차별점
- Integrated shoot-through protection eliminates dead-time generation firmware overhead (vs IR2110SPBF)
- Single PWM input simplifies firmware interface (vs IR2110SPBF)
- 600V high-side offset in compact 8-SOIC (vs NCP5106BDR2G)
설계 노트
Bootstrap capacitor sizing is critical for IR25606STRPBF high-side operation. Use the formula C_BOOT >= 10 x Q_G / (VCC - V_F - V_GS_MIN), where Q_G is the high-side MOSFET total gate charge, V_F is the bootstrap diode forward voltage (~1 V), and V_GS_MIN is the minimum gate-source voltage that keeps the MOSFET fully enhanced (~10 V for typical 12V VCC). At 100 kHz switching with a 50 nC Q_G MOSFET, this yields a minimum 0.1 µF ceramic (X7R) capacitor; in practice use 0.47 µF or 1 µF for margin. An ultrafast 100V diode (e.g. UF4007) between VCC and VB replenishes the bootstrap each low-side cycle.
Place the IR25606STRPBF within 10 mm of the driven MOSFETs or IGBTs to minimize gate-loop parasitic inductance, which otherwise causes ringing, EMI, and potential shoot-through. Use wide 0.5 mm copper traces for the gate-drive outputs (HO and LO) and Kelvin-connect the gate-driver GND to the source of the low-side switch at the power device, not at the global ground plane. Place the VCC bypass capacitor (≥1 µF ceramic) and the bootstrap capacitor directly at their respective IC pins, with vias placed to minimize parasitic inductance.
Do not exceed the 600 V high-side offset rating of the IR25606STRPBF - leave at least 50% derating for surge events, particularly in PFC front ends where bus voltages can overshoot. Never operate VCC below 10 V or the internal UVLO will disable both outputs simultaneously, potentially causing MOSFET cross-conduction during supply ramp. Always include a 100 V ultrafast bootstrap diode, never a slow rectifier, to ensure the bootstrap capacitor fully recharges during the short low-side on-time in high-frequency designs. Estimated: these design points are derived from standard half-bridge driver practice and the IR25606 datasheet electrical characteristics.
The IR25606STRPBF in 8-SOIC has a typical thermal resistance of θJA ~150 C/W on a standard 2-layer JEDEC test board. Maximum quiescent current consumption at 20 V VCC is ~5 mA, yielding worst-case 100 mW dissipation in the IC alone - thermal rise is negligible. However, gate-drive switching losses at high frequencies and large MOSFET gate charges can push the IC dissipation higher; ensure the SOIC ground pad has sufficient copper pour (recommended minimum 100 mm²) to keep junction temperature below 125 C. Estimated: thermal calculations based on standard SOIC-8 thermal resistance and quiescent current from datasheet.
규정 준수 정보
RoHS compliance and lead-free status confirmed by PBF suffix in MPN per distributor datasheet. AEC-Q100 automotive qualification not listed on manufacturer product page - choose automotive-grade Infineon variants for vehicle applications. Halogen-free status not explicitly stated in available data.
