IRLR2908TRPBF - 80V N-Ch HEXFET MOSFET, 30A, DPAK | Infineon
MPN： IRLR2908TRPBF ✓ 啟用中IRLR2908TRPBF 概覽
A power MOSFET is a voltage-controlled semiconductor switch used to efficiently switch or amplify electronic signals in power-conversion circuits. N-channel MOSFETs like the IRLR2908TRPBF are the dominant choice for low-side switching and synchronous-rectifier positions because their lower on-resistance per unit area gives better efficiency than equivalent P-channel parts. This part belongs to the broader family of discrete semiconductors (MOSFETs -> transistors -> discrete semiconductors) used wherever efficient power switching is required.
Key features include a logic-level gate drive threshold (Vgs(th) typically 1V-2V), avalanche-rated ruggedness, 175C maximum junction operating temperature, and fast switching speed. The DPAK (TO-252AA) surface-mount package provides a compact footprint with a tab that doubles as a drain thermal pad, supporting moderate-power PCB designs.
The device uses Infineon's IR MOSFET process technology, which combines a proprietary trench-gate cell design with a refined body diode to deliver low RDS(on) and high di/dt capability. This technology is well-suited to high-frequency SMPS, motor control, and automotive subsystems where both conduction loss and switching loss must be minimized.
Typical applications include DC-DC converters, motor drive half-bridges, solenoid/relay drivers, LED lighting ballasts, battery protection, and automotive ECU power stages. The wide 80V drain-source rating provides ample margin for 24V industrial and 12V automotive rails.
When designing with this part, ensure the gate-source voltage stays within the abs-max rating (typically +/-20V) and provide adequate heatsinking through the drain tab. For hard-switched topologies, a gate-driver IC is recommended to achieve the published switching speeds.
This page synthesizes distributor pricing, drop-in DPAK alternatives, and practical thermal/layout design notes not found in the manufacturer datasheet alone.
直接替換替代品，適用於 IRLR2908TRPBF — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： IRLR2908TRPBF （相同外形與佔位） — 差異在於 Package, Mounting Type, Technology, Operating Junction Temperature, Total Gate Charge (Qg).
AUIRLR2908TRL
✅ 直接替換📋 參考替代品（不在目錄中）
IRLR2908TRLPBF
✅ 直接替換📋 參考替代品（不在目錄中）
IRLR2908PBF
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
IRLB4030PBF
✅ 直接替換聯絡詢價
查看資料表 →VBE1104N
✅ 直接替換📋 參考替代品（不在目錄中）
IRLR3114ZTRPBF
✅ 直接替換聯絡詢價
查看資料表 →IRLR2908TRPBF 最大額定值與電氣特性
| 電晶體類型 | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (Vds) | 80 V |
| Continuous Drain Current (Id) at Tc=25C | 30 A |
| On-Resistance RDS(on) max @ Vgs=10V | 28 mOhm |
| On-Resistance RDS(on) typ @ Vgs=10V | 22.5 mOhm |
| Gate Charge (Qg) typ | 22 nC |
| Power Dissipation (Pd) at Tc=25C | 120 W |
| 工作接面溫度 | -55C to +175C |
| 封裝 | TO-252AA (DPAK), surface mount |
| 安裝類型 | Surface Mount |
| Configuration | Single with built-in diode |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) |
IRLR2908TRPBF 腳位配置
| 腳位 1 | Gate — MOSFET gate control input |
| 腳位 2 | Drain — MOSFET drain (connected internally to metal tab) |
| 腳位 3 | Source — MOSFET source reference |
| 腳位 Tab | Drain — Drain tab (electrically tied to pin 2); solder to copper pour for thermal dissipation |
安全工作區 (DC, Tc=25C)
典型應用
IRLR2908TRPBF 適用於 6 應用s: DC-DC Buck Converter (12V to 3.3V/5V), Automotive 12V/24V Load Switch, Brushless DC Motor Drive (3-Phase Inverter), Solenoid and Relay Driver, LED Lighting Driver (High-Brightness), Battery Protection and Hot-Swap Controller.
DC-DC Buck Converter (12V to 3.3V/5V)
The IRLR2908TRPBF serves as the low-side synchronous-rectifier or high-side control switch in 12V-input buck converters. Its 80V Vds rating easily handles the 12V rail plus transient ringing, while 22.5 mOhm typical RDS(on) keeps conduction loss under 1W at 5A output. The 22 nC total gate charge enables switching frequencies above 250 kHz when paired with a dedicated gate driver such as IR21064 or IRS2184. Compared with bipolar transistors, the MOSFET eliminates storage-time losses and improves light-load efficiency. The DPAK tab provides sufficient heatsinking for 30W converter designs with adequate copper area.
推薦
Automotive 12V/24V Load Switch
The IRLR2908TRPBF is well suited to automotive load-switch and ECU power-stage applications thanks to its 80V Vds margin above the 24V jump-start transient envelope. Its 30A continuous rating handles headlamp relays, fuel-pump drivers, and HVAC blower switches with low conduction loss. The avalanche-rated HEXFET process absorbs the energy of unclamped inductive loads. For AEC-Q101 qualified builds use the AUIRLR2908 variant in the same DPAK footprint. Reverse-battery protection can be implemented by adding a Schottky diode in series with the source.
推薦
Brushless DC Motor Drive (3-Phase Inverter)
In a 3-phase BLDC inverter the IRLR2908TRPBF can be used as the low-side FET in each half-bridge leg for sub-100V motor systems. The 30A continuous rating covers fractional-horsepower motors used in fans, pumps, and small e-bike traction drives. Fast body-diode recovery and 22 nC Qg support PWM frequencies up to 50 kHz for low acoustic noise. The 175C junction temperature rating gives substantial thermal margin over ambient. For higher-current drives parallel multiple IRLR2908TRPBF devices and gate-balance them with individual source resistors.
推薦
Solenoid and Relay Driver
The IRLR2908TRPBF is an excellent low-side driver for 12V/24V solenoids, relays, and valve coils where fast switching and energy dissipation matter. When the coil is de-energized, the MOSFET must absorb the inductive kickback; the IRLR2908's avalanche rating handles this directly without an external TVS clamp in many cases. Its low 22.5 mOhm RDS(on) keeps the solenoid at full pull-in voltage even with long harness runs. The TO-252 package is easy to mount on a chassis-side PCB with the drain tab acting as a heatsink.
推薦
LED Lighting Driver (High-Brightness)
Constant-current LED drivers for high-brightness architectural and automotive lighting benefit from the IRLR2908TRPBF's low RDS(on) and high switching speed. In a buck or linear-current regulator topology the MOSFET can PWM dim the LED string at several kHz with minimal switching noise. Its 80V Vds handles large LED strings on 48V bus systems. The DPAK tab provides thermal dissipation for high-current LED strings, eliminating the need for an isolated heatsink in compact fixtures.
推薦
Battery Protection and Hot-Swap Controller
In battery-pack protection circuits and hot-swap controllers the IRLR2908TRPBF acts as the low-side disconnect switch. Its low RDS(on) minimizes voltage drop across the protection FET, preserving battery capacity. The 30A continuous rating covers 4S-8S Li-ion packs used in power tools and e-mobility. The 80V Vds protects against cell overvoltage and external transients. The DPAK package simplifies PCB layout where a high-side P-channel MOSFET would otherwise be required.
推薦
推薦產品摘要
工程參考資料，適用於 IRLR2908TRPBF — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | AUIRLR2908TRL | IRLR2908TRLPBF | IRLB4030PBF | VBE1104N |
|---|---|---|---|---|---|
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Automotive Qualified (AEC-Q101) | No | Yes (AEC-Q101) | No | No | No |
| Technology | IR HEXFET | IR HEXFET | IR HEXFET | IR HEXFET | Trench MOSFET |
主要差異化特點
- Wide 80V Vds headroom for 24V industrial and 48V telecom rails (對比IRLB4030PBF)
- AEC-Q101 qualified version available in same footprint (對比IRLR2908TRPBF (non-automotive))
- Mature IR HEXFET process with proven long-term reliability (對比VBE1104N)
設計說明
Estimated thermal analysis: with Pd=120W at Tc=25C and a typical DPAK theta_JA of ~50 C/W on 1 oz copper (1 sq inch), continuous 30A operation at VIN=24V, VOUT=12V will dissipate roughly P=(24-12)*30=360 mW which is trivial. However at low-VIN switching-regulator continuous loads near 30A, Rtheta_JA must be verified against the datasheet SOA curve. For continuous high-current operation, solder the drain tab to at least 1 sq inch of 2 oz copper to keep junction below 150C.
Mount the DPAK drain tab onto a copper pour that also serves as the drain thermal pad. Use multiple thermal vias (0.3mm drill, 1mm pitch) under the tab to inner layers for additional heat spreading. Place gate-drive traces away from drain switching nodes to minimize dv/dt-induced gate glitches; a 10k gate-source pull-down resistor prevents spurious turn-on during power-up.
Do not exceed Vgs abs-max of +/-20V. Add a 10V Zener or TVS between gate and source for protection against inductive transients on the gate driver supply. For avalanche operation above the rated EAS, add an external TVS or RCD snubber. Verify the diode forward current rating if using the body diode in a synchronous-rectifier role - parallel a Schottky if reverse-recovery loss is significant.
合規資訊
PBF suffix indicates lead-free, RoHS-compliant. AEC-Q101 automotive version available as AUIRLR2908. Halogen-free status not confirmed in provided data.
