IRLR3114ZTRPBF - 40V, 130A N-Channel HEXFET MOSFET | Infineon
MPN: IRLR3114ZTRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.78 | $0.78 |
| 10 | $0.74 | $7.40 |
| 100 | $0.65 | $65.00 |
| 500 | $0.58 | $290.00 |
| 1,000 | $0.52 | $520.00 |
| 3,000 | $0.46 | $1,380.00 |
Drop-in alternatives for IRLR3114ZTRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
AUIRLR3114Z
β Drop-Inπ Reference alternative (not in catalog)
IRLR3114ZPBF
β Drop-Inπ Reference alternative (not in catalog)
IRFR4104TRPBF
β Drop-Inπ Reference alternative (not in catalog)
IRLR3114ZTRPBF Maximum Ratings & Electrical Characteristics
| Transistor Type | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID, Tc=25 C) | 42 A |
| Continuous Drain Current (ID, Tc=100 C) | 30 A |
| Pulsed Drain Current (IDM) | 130 A |
| Gate-Source Voltage (VGS) max | 16 V |
| Gate Threshold Voltage (VGS(th)) | 2.5 V (typ) |
| On-Resistance RDS(on) max @ VGS=10V | 4.5 mOhm |
| On-Resistance RDS(on) @ VGS=4.5V | 4.9 mOhm |
| Total Gate Charge (Qg) | 40 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | 3.81 nF |
| Power Dissipation (Pd, Tc=25 C) | 140 W |
| Operating Junction Temperature | -55 C to +175 C |
| Package | TO-252AA (DPAK) surface mount |
| Mounting Type | Surface Mount |
| Number of Pins | 3 (2 + tab) |
| RoHS Status | Compliant |
IRLR3114ZTRPBF Pin Configuration
| Pin 1 | Gate β Gate drive input (logic-level compatible, 4.5 V typical enhancement) |
| Pin 2 | Drain β Drain terminal, electrically bonded to the metal tab for thermal dissipation |
| Pin 3 | Source β Source terminal, typically tied to system ground on low-side applications |
Safe Operating Area (DC, Tc=25 C)
Typical Applications
IRLR3114ZTRPBF is suitable for 6 applications: Synchronous Rectification in 12V/24V DC-DC Converters, Motor Drive Half-Bridge / H-Bridge Stage, Battery Protection and OR-ing in UPS Systems, Hot-Swap and In-Rush Current Control, Automotive 12V Load Switch and Body Electronics, Class-D Audio Amplifier Output Stage.
Synchronous Rectification in 12V/24V DC-DC Converters
The IRLR3114ZTRPBF is well-suited as the low-side synchronous rectifier in 12 V and 24 V non-isolated buck converters and isolated forward converters. Its 4.5 mOhm RDS(on) at VGS=10 V and 40 V VDS rating leave sufficient headroom above the 16-19 V transient rails of a 12 V automotive/industrial supply. At a 30 A load, the conduction loss is only about 4 W per device, and the low 40 nC total gate charge permits switching frequencies of 200-500 kHz without excessive gate-drive loss, enabling compact high-density POL modules.
Recommended
Motor Drive Half-Bridge / H-Bridge Stage
The IRLR3114ZTRPBF works as a low-side switch in brushless DC (BLDC) motor half-bridge and H-bridge driver stages for industrial drives, robotics, and small e-mobility. Its 130 A pulsed rating handles motor inrush and stall conditions, while the TO-252AA tab allows direct PCB heatsinking. Logic-level VGS(th) of 2.5 V (typ) means it can be driven directly from 3.3 V gate driver outputs. The 175 C junction rating provides margin for thermally demanding outdoor applications.
Recommended
Battery Protection and OR-ing in UPS Systems
In battery management systems (BMS), uninterruptible power supplies, and redundant DC rail OR-ing, the IRLR3114ZTRPBF provides low-loss reverse polarity protection and load sharing. Its 4.5 mOhm on-resistance yields only about 450 mV drop at 100 A, dramatically reducing heat dissipation versus Schottky diodes. The 40 V rating comfortably covers 12 V (16 V transients) and 24 V (32 V transients) battery packs. The logic-level gate enables MCU-controlled disconnect.
Recommended
Hot-Swap and In-Rush Current Control
For hot-swap controllers, the IRLR3114ZTRPBF acts as the load switch that absorbs in-rush during board insertion into a live backplane. Its 130 A pulsed drain current capability and 175 C thermal rating handle the worst-case transient heating during capacitor charging. With the DPAK tab tied to the drain, a copper pour on the system board acts as the heatsink, simplifying thermal design. The 40 nC Qg keeps the controller hot-swap loop stable across fast turn-on edges.
Recommended
Automotive 12V Load Switch and Body Electronics
Although the standard IRLR3114ZTRPBF is not AEC-Q qualified, its wide operating range (-55 C to +175 C junction) and DPAK form factor suit non-safety automotive body-electronics loads such as LED drivers, seat heaters, and accessory power outlets. For AEC-Q101 mandated subsystems, the AUIRLR3114Z variant is the drop-in alternative. The 40 V VDS rating absorbs load-dump transients up to 35 V, making the part robust against 12 V automotive power quality.
Recommended
Class-D Audio Amplifier Output Stage
In Class-D audio amplifiers with 12-24 V rails, the IRLR3114ZTRPBF serves as a low-side output switch. Its 4.5 mOhm RDS(on) minimizes conduction loss and on-resistance distortion, while the fast switching speed supports PWM frequencies of 250-500 kHz to push switching noise out of the audio band. The DPAK tab provides a stable thermal path that prevents thermal compression during sustained high-power bass passages.
Recommended
Recommended Products Summary
Engineering reference data for IRLR3114ZTRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | AUIRLR3114Z | IRLR3114ZPBF | IRFR4104TRPBF |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | TO-252AA (DPAK) | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same | TO-252AA (DPAK) - same |
| Drain-Source Voltage VDS | 40 V | 40 V | 40 V | 40 V |
| RDS(on) max @ VGS=10V | 4.5 mOhm | 4.5 mOhm | 4.5 mOhm | 6.5 mOhm (approx +44%) |
| Continuous Drain Current ID (Tc=25 C) | 42 A | 42 A | 42 A | 30-34 A |
| Total Gate Charge Qg | 40 nC @ VGS=4.5 V | 40 nC | 40 nC | 60-70 nC (approx +50%) |
| AEC-Q101 Qualification | Not qualified | AEC-Q101 qualified | Not qualified | Not qualified |
| Operating Junction Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
| Unit Price (qty 1, approx) | USD 0.78 | USD 1.10-1.40 | USD 0.80-1.00 | USD 0.65-0.85 |
Key Differentiators
- Lower on-resistance than older IR generation at same package (vs IRFR4104TRPBF)
- Logic-level VGS(th) compatible with 3.3 V/5 V MCUs (vs Standard 10V-threshold HEXFETs)
- 175 C maximum junction operating temperature (vs 150 C-rated competing MOSFETs)
Design Notes
Estimated: at VDS=24 V, ID=20 A continuous, and switching loss neglected, the IRLR3114ZTRPBF dissipates roughly 1.8 W (I^2*R with R=4.5 mOhm). With a typical DPAK junction-to-ambient thermal resistance of 50 C/W on a 2 oz copper 1 square-inch tab, junction rise is ~90 C above ambient, well below the 175 C rating. For sustained operation above 25 A, add a heatsink or expand copper area to keep Tj under 150 C for long-term reliability.
Minimize the high-current drain-source loop area by placing the device directly above the input/output capacitors. Use wide copper pours on the DPAK tab and stitch thermal vias (6-9 vias, 0.3 mm drill) directly under the tab to inner copper planes. Keep the gate-drive trace short and away from the drain switching node; a 10-100 ohm gate resistor dampens ringing caused by package and trace inductance.
Do not exceed VGS of 16 V; the gate oxide will permanently damage above this threshold. Add a 10 kohm gate-source pull-down resistor to ensure the MOSFET stays off during MCU reset or floating PWM signals. In synchronous rectification, schedule dead-time (typically 50-200 ns) between high-side and low-side transitions to prevent shoot-through that can exceed 130 A pulsed current and destroy the die.
Use the JEDEC TO-252 land pattern with a tab pad of approximately 6.5 mm x 5.5 mm and three 1.0 mm wide Source pads as recommended in the Infineon HEXFET datasheet. Thermal vias under the tab significantly reduce junction temperature; Infineon recommends at least six 0.3 mm vias filled with solder or thermally conductive epoxy for production designs.
Compliance Information
RoHS compliant per LCSC C67278 and JLCPCB listings. Not AEC-Q qualified - for AEC-Q101 requirements choose AUIRLR3114Z as the drop-in automotive alternative. Halogen-free status not explicitly confirmed by Infineon datasheet.
