IRLR2908TRPBF vs IRLB4030PBF 比較
詳細並排比較 IRLR2908TRPBF 由 Infineon 與 IRLB4030PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLR2908TRPBF | IRLB4030PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Technology | HEXFET (IR MOSFET) | HEXFET (StrongIRFET family) |
| Drain-Source Voltage (Vds) | 80 V | — |
| Continuous Drain Current (Id) at Tc=25C | 30 A | — |
| Pulsed Drain Current (Idm) | [DATA_NEEDED: Idm pulsed value] | — |
| On-Resistance RDS(on) max @ Vgs=10V | 28 mOhm | — |
| On-Resistance RDS(on) typ @ Vgs=10V | 22.5 mOhm | — |
| Gate Charge (Qg) typ | 22 nC | — |
| Power Dissipation (Pd) at Tc=25C | 120 W | — |
| 工作接面溫度 | -55C to +175C | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th) range] | — |
| 封裝 | TO-252AA (DPAK), surface mount | TO-220AB |
| 安裝類型 | Surface Mount | Through Hole |
| Configuration | Single with built-in diode | — |
| Lead-Free / RoHS | Yes (PBF suffix indicates lead-free) | — |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) at Tc | — | 180 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max at VGS=10V | — | 4.3 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | 87 nC |
| Gate-to-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] |
| Power Dissipation (PD) at Tc | — | 370 W |
| 工作溫度範圍 | — | -55C to +175C |
| Logic Level Drive | — | Yes (optimized for 4.5 V to 10 V VGS) |
| Qualification | — | JEDEC |
| RoHS 狀態 | — | Compliant |