ISC060N06NM6ATMA1 - 60V 62A OptiMOS 6 N-Channel MOSFET | Infineon
MPN： ISC060N06NM6ATMA1 ✓ 啟用中ISC060N06NM6ATMA1 概覽
An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled, majority-carrier switching device used to switch and amplify signals in power-electronics circuits. As an enhancement-mode MOSFET it conducts when VGS exceeds the gate threshold; when off it blocks voltage between drain and source. It sits inside the hierarchy discrete semiconductor -> transistor -> MOSFET -> power MOSFET -> low-voltage N-channel MOSFET, and it is the workhorse of synchronous rectification, motor drive, and hot-swap circuits.
Key features include ultra-low on-state resistance for reduced conduction losses, optimized gate charge for fast switching, a logic-level compatible gate drive in most application ranges, and an avalanche-rated body diode for inductive load robustness. The PG-TDSON-8 (also called TDSON-8 or SuperSO-8) package exposes the drain pad as a thermal pad, dropping junction-to-case thermal resistance to enable high current handling in compact layouts.
The OptiMOS 6 60 V technology targets soft-switching topologies such as LLC resonant converters, telecom brick converters, and synchronous rectification in SMPS stages. The platform achieves a ~25% FOM improvement over OptiMOS 5, which directly translates to lower total losses at high switching frequencies where gate-charge loss dominates. Designers benefit from smaller magnetics and higher power density.
Typical applications include DC-DC point-of-load conversion in server and telecom bricks, synchronous rectification in 48 V secondary stages, motor drive half-bridges in industrial 24 V systems, battery protection and OR-ing in 12-36 V battery packs, and hot-swap controllers in computing and storage equipment. The 60 V rating provides comfortable headroom for 24 V and 36 V nominal rails with substantial transient margin.
When designing with this part, evaluate SOA at the target switching frequency, ensure gate-drive voltage is well above VGS(th) (typically 10 V for full RDS(on)), and provide sufficient PCB copper on the drain pad. The exposed pad is the primary heat path - thermal vias to inner copper planes are strongly recommended.
This page synthesizes distributor inventory, parametric alternatives, and practical design notes that complement the manufacturer datasheet and aid in rapid part selection.
直接替換替代品，適用於 ISC060N06NM6ATMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： ISC060N06NM6ATMA1 （相同外形與佔位） — 差異在於 Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), Continuous Drain Current (ID) at Ta.
ISZ072N06NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC151N08NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC037N12NM6ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC015N06NM5ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC015N06NM5LF2ATMA1
✅ 直接替換聯絡詢價
查看資料表 →ISC060N06NM6ATMA1 最大額定值與電氣特性
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 6 |
| 電晶體類型 | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at Ta | 15.2 A |
| Continuous Drain Current (ID) at Tc | 62 A |
| Power Dissipation (PD) at Ta | 3 W |
| Power Dissipation (PD) at Tc | 50 W |
| 封裝 | PG-TDSON-8 (TDSON-8) |
| 安裝類型 | Surface Mount |
| Technology | OptiMOS 6 (60V generation) |
| Configuration | Single N-Channel |
| 工作溫度範圍 | -55C to +175C (junction, per OptiMOS 6 family) |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) |
| RoHS 狀態 | Compliant |
ISC060N06NM6ATMA1 腳位配置
| 腳位 1 | Gate — Gate drive input (standard 10V VGS recommended for full RDS(on)) |
| 腳位 2 | Source — Source connection (electrically tied to thermal pad) |
| 腳位 3 | Source — Source connection (electrically tied to thermal pad) |
| 腳位 4 | Drain — Drain connection (high-current path) |
| 腳位 5 | Drain — Drain connection (high-current path) |
| 腳位 6 | Drain — Drain connection (high-current path) |
| 腳位 7 | Source — Source connection (electrically tied to thermal pad) |
| 腳位 8 | Source — Source connection (electrically tied to thermal pad) |
| 腳位 EP | Drain / Thermal Pad — Exposed pad - primary drain connection and thermal path to PCB copper |
安全工作區 (DC)
典型應用
ISC060N06NM6ATMA1 適用於 6 應用s: Synchronous Rectification in SMPS, DC-DC Point-of-Load Conversion, Industrial Motor Drive Half-Bridge, Battery Protection and OR-ing, Hot-Swap and Inrush Limiting, Power OR-ing and Redundant Supplies.
Synchronous Rectification in SMPS
The ISC060N06NM6ATMA1 is ideal for synchronous rectification in 48 V to low-voltage bus converters (e.g., 48 V to 12 V or 5 V) used in telecom bricks and server power supplies. Its OptiMOS 6 platform achieves >37% lower RDS(on) than the previous generation and ~25% higher FOM, which directly cuts conduction loss at the 60 V secondary-side rectifier position. Designers typically pair it with a dedicated gate driver and place it on the secondary side of an LLC or phase-shift full-bridge topology, where the 60 V rating gives comfortable margin above 48 V nominal rails including transient spikes.
推薦
DC-DC Point-of-Load Conversion
In 24 V or 36 V intermediate bus point-of-load (POL) converters, the ISC060N06NM6ATMA1 serves as the high-side or low-side switch in buck topologies powering FPGAs, ASICs, and processors. Its low RDS(on) minimizes conduction loss at high load currents, while the fast switching of OptiMOS 6 keeps switching losses low at 200-500 kHz switching frequencies. The 60 V rating provides robust margin for 24 V industrial rails and 36 V telecom buses, and the PG-TDSON-8 footprint supports compact, high-density POL designs on standard 4-layer PCBs.
推薦
Industrial Motor Drive Half-Bridge
The ISC060N06NM6ATMA1 is well-suited for 24 V industrial motor drive half-bridges, such as BLDC or stepper motor stages driving pumps, fans, and small servos. Its 62 A continuous drain current at Tc and 50 W power dissipation provide ample margin for peak motor currents during startup and reversal, while the PG-TDSON-8 exposed pad offers excellent thermal performance for sustained motor loads. The 60 V rating handles back-EMF transients in 24 V systems, and the optimized body diode supports hard-switching commutation in half-bridge configurations.
推薦
Battery Protection and OR-ing
In 12-36 V battery management and OR-ing circuits for e-mobility, telecom backup, and energy storage systems, the ISC060N06NM6ATMA1 acts as the disconnect or ideal-diode switch. Its low RDS(on) reduces steady-state loss in continuous conduction paths, while its avalanche-rated body diode withstands the inductive transients during load-dump and reverse-battery events. The 60 V rating covers 24 V and 36 V battery packs with substantial transient margin, and the surface-mount PG-TDSON-8 package supports automated high-volume assembly.
推薦
Hot-Swap and Inrush Limiting
For hot-swap controllers in computing, storage, and networking equipment operating from 24 V or 48 V buses, the ISC060N06NM6ATMA1 serves as the inrush-control and load-disconnect switch. Its 62 A continuous rating supports hot-plug events on high-current rails, while the OptiMOS 6 platform's low gate charge simplifies gate-driver design in linear-enhancement hot-swap topologies. The 60 V rating gives transient margin for 48 V nominal rails, and the PG-TDSON-8 package enables compact, thermally efficient designs on standard server PCBs.
推薦
Power OR-ing and Redundant Supplies
In redundant 24-48 V power supply architectures for telecom and server applications, the ISC060N06NM6ATMA1 acts as the OR-ing MOSFET preventing reverse current flow between paralleled supplies. Its low RDS(on) keeps the loss budget manageable on continuous-duty paths, while the body diode provides fail-safe conduction if the gate drive is lost. The 60 V rating comfortably handles 48 V nominal rails with transient margin, and the PG-TDSON-8 footprint supports dense, high-current paralleled configurations for high-reliability systems.
推薦
推薦產品摘要
工程參考資料，適用於 ISC060N06NM6ATMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | ISZ072N06NM6ATMA1 | ISC151N08NM6ATMA1 | ISC037N12NM6ATMA1 | ISC015N06NM5ATMA1 | ISC015N06NM5LF2ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8 | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same | PG-TDSON-8 - same |
| Drain-Source Voltage (VDS) | 60 V | 60 V | 80 V | 120 V | 60 V | 60 V |
| Technology Generation | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 6 | OptiMOS 5 | OptiMOS 5 LF2 |
| FOM Improvement vs OptiMOS 5 | ~25% higher FOM | ~25% higher FOM | ~25% higher FOM | ~25% higher FOM | baseline (OptiMOS 5) | baseline (OptiMOS 5) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
主要差異化特點
- Latest OptiMOS 6 generation with ~25% FOM improvement (對比ISC015N06NM5ATMA1 (OptiMOS 5))
- Higher VDS rating with same OptiMOS 6 family (對比ISC151N08NM6ATMA1 (80 V) and ISC037N12NM6ATMA1 (120 V))
- Standard 60 V rating for 24-36 V industrial and telecom rails (對比ISC011N04NM7VATMA1 (40 V OptiMOS 7))
設計說明
Estimated: at continuous 62 A drain current with 50 W power dissipation (Tc-rated), the PG-TDSON-8 package requires substantial PCB copper on the drain pad to keep junction temperature within the 175C limit. Place a thermal via array (typically 9-16 vias, 0.3 mm drill, 1 mm pitch) directly under the exposed pad to inner-layer copper planes. Without thermal management, junction temperature can exceed safe limits within seconds at full rated current.
Minimize the high-current loop between drain and source by placing the ISC060N06NM6ATMA1 directly adjacent to its decoupling capacitor and minimizing trace length on the switching node. Use wide copper pours (>=2 oz preferred) on both source and drain paths. The gate loop (gate-driver to gate-pin to source-return) should be kept short and isolated from the power loop to avoid dv/dt-induced parasitic turn-on in half-bridge configurations.
Do not exceed the 60 V VDS rating under any condition including avalanche from inductive load turn-off - this destroys the device. Gate-source voltage must stay within +/-20 V (per OptiMOS 6 family limits) to avoid gate-oxide rupture. Ensure the gate-driver UVLO threshold is below the driver's min operating voltage so the MOSFET is held off during controller power-up transients.
The fast switching of OptiMOS 6 produces high dv/dt on the switching node (>=5 V/ns typical) which can couple into the gate loop and cause parasitic turn-on in half-bridge topologies. Use a Miller clamp or negative gate-off bias (e.g., -3 V) to prevent shoot-through. Place a small ferrite bead or resistor (10-22 ohm) in series with the gate to damp ringing without significantly slowing switching.
合規資訊
RoHS compliant per Infineon product page. Not AEC-Q100 qualified (industrial-grade part). For automotive applications, choose an AEC-Q100 qualified OptiMOS variant.
