ISC060N06NM6ATMA1 vs ISC151N08NM6ATMA1 比較
詳細並排比較 ISC060N06NM6ATMA1 由 Infineon 與 ISC151N08NM6ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | ISC060N06NM6ATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| 電晶體類型 | N-Channel MOSFET | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V | 80 V |
| Continuous Drain Current (ID) at Ta | 15.2 A | — |
| Continuous Drain Current (ID) at Tc | 62 A | — |
| Power Dissipation (PD) at Ta | 3 W | — |
| Power Dissipation (PD) at Tc | 50 W | — |
| 封裝 | PG-TDSON-8 (TDSON-8) | PG-TDSON-8 FL |
| 安裝類型 | Surface Mount | Surface Mount |
| Technology | OptiMOS 6 (60V generation) | OptiMOS 6 |
| Configuration | Single N-Channel | — |
| 工作溫度範圍 | -55C to +175C (junction, per OptiMOS 6 family) | — |
| Gate Drive | Standard gate drive (10 V VGS recommended for full RDS(on)) | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL level] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| On-State Resistance RDS(on) at VGS=10V | [DATA_NEEDED: RDS(on) max in mohm] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typ/nC] | — |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| 連續汲極電流 (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| 腳位數 | — | 8 |
| Channel Mode | — | Enhancement |
| 工作溫度 | — | -55 °C to +175 °C |