2EDL8034G4CXTMA1 - 120V 4A Half-Bridge Gate Driver | Infineon
MPN： 2EDL8034G4CXTMA1 ✓ 啟用中2EDL8034G4CXTMA1 概覽
A gate driver is a power-management IC that sits between a low-current PWM controller and the high-current gate of a switching transistor, providing level shifting, drive strength, and protection. The 2EDL8034 belongs to the gate-driver IC hierarchy (gate driver -> driver IC -> power management IC -> semiconductor) and is a non-inverting type: its HO and LO outputs follow the HIN and LIN inputs directly, simplifying PWM dead-time generation in the upstream controller.
Key features include 4 A peak sink / 3 A peak source gate-drive current into a 1 nF load, a 120 V bootstrap diode and high-side voltage rail tolerant to 120 V, integrated under-voltage lockout (UVLO) for both VCC and VBS rails, and junction isolation rated to 5 kV HBM ESD. The driver accepts 3.3 V / 5 V logic inputs and operates over -40 C to +125 C junction temperature, suiting industrial and automotive-grade powertrain designs. The DSN-10 footprint with exposed pad keeps the high-current return loops short and provides low thermal resistance (~30 C/W) for high-frequency switching.
The architecture uses a true low-side level shifter with a bootstrap diode for the high-side rail, eliminating the need for an external bootstrap diode in most designs. Internal logic prevents cross-conduction by ensuring HO and LO cannot be high simultaneously, while the small propagation delay (~50 ns typical) supports switching frequencies up to 500 kHz.
Typical applications include telecom and server buck/boost converters, half-bridge and full-bridge motor drives, class-D audio amplifiers, industrial SMPS, and automotive 48 V mild-hybrid DC-DC stages. The 120 V boot rating supports 48 V, 60 V, and 80 V bus rails commonly seen in telecom rectifiers and mild-hybrid vehicles.
When designing with this device, place the bootstrap capacitor (typically 0.1 uF to 1 uF ceramic) close to the VBS pin and use a low-ESR ceramic on VCC to suppress switching noise. Verify the dead-time insertion in the controller to prevent shoot-through under all load transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not consolidated in the manufacturer datasheet, supporting engineers sourcing 2EDL8034G4CXTMA1 for half-bridge power stages.
直接替換替代品，適用於 2EDL8034G4CXTMA1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： 2EDL8034G4CXTMA1 （相同外形與佔位） — 差異在於 Package, Isolation Type, Product Type, Number of Channels, Peak Sink Current.
2EDL8124GXUMA1
✅ 直接替換聯絡詢價
查看資料表 →2EDL6014ACG2DXTMA1
✅ 直接替換聯絡詢價
查看資料表 →2EDL5023U2DXTMA1
✅ 直接替換聯絡詢價
查看資料表 →UCC27211ADDAR
✅ 直接替換📋 參考替代品（不在目錄中）
NCP51530ADR2G
✅ 直接替換📋 參考替代品（不在目錄中）
2EDL8034G4CXTMA1 最大額定值與電氣特性
| Driver Type | Half-Bridge (High-Side / Low-Side) |
| Configuration | Non-Inverting |
| Bootstrap Voltage (Max) | 120 V |
| Peak Source Current | 3 A |
| Peak Sink Current | 4 A |
| 輸出數量 | 2 |
| Input Logic Compatibility | 3.3 V / 5 V |
| UVLO Protection | Yes (VCC and VBS) |
| Isolation Type | Junction-isolated (level-shifted) |
| 工作接面溫度 | -40 C to +125 C |
| 封裝 | PG-VDSON-10-2 (DSN-10) with exposed pad |
| 安裝類型 | Surface Mount |
| Lead-Free / RoHS | Yes (per Infineon product page) |
2EDL8034G4CXTMA1 腳位配置
| 腳位 1 | VCC — Logic supply voltage for low-side and level shifter |
| 腳位 2 | HIN — High-side logic input (non-inverting) |
| 腳位 3 | LIN — Low-side logic input (non-inverting) |
| 腳位 4 | GND — Logic and low-side return |
| 腳位 5 | LO — Low-side gate drive output |
| 腳位 6 | VS — High-side floating supply return (switch node) |
| 腳位 7 | HO — High-side gate drive output |
| 腳位 8 | VBS — High-side floating supply (bootstrap) |
| 腳位 9 | NC — Not connected (per datasheet) |
| 腳位 10 | EP — Exposed pad - thermal and ground connection |
典型應用
2EDL8034G4CXTMA1 適用於 6 應用s: Telecom 48V Half-Bridge DC-DC Converter, Automotive 48V Mild-Hybrid DC-DC Stage, Class-D Audio Amplifier Output Stage, Industrial Brushless DC (BLDC) Motor Drive, Server and Data Center VRM Stage, Solar Micro-Inverter Half-Bridge Stage.
Telecom 48V Half-Bridge DC-DC Converter
The 2EDL8034G4CXTMA1's 120 V bootstrap and 4 A peak sink / 3 A source gate-drive current make it a strong fit for telecom 48 V bus half-bridge and full-bridge DC-DC converters. It drives 100 V-rated N-channel MOSFETs or GaN HEMTs from a 3.3 V PWM controller with sub-50 ns propagation delay, supporting multi-MHz switching. The integrated bootstrap diode eliminates an external component and shrinks the BOM for high-density telecom rectifier cards where 1,000-piece pricing at ~USD 1.71 enables cost-effective deployment.
推薦
Automotive 48V Mild-Hybrid DC-DC Stage
In automotive 48 V mild-hybrid DC-DC converters, the 2EDL8034G4CXTMA1 drives 80 V-100 V MOSFETs on a 48 V bus, with -40 C to +125 C junction temperature support covering under-hood thermal extremes. The non-inverting logic and tight HO/LO delay matching simplify AEC-Q100 system-level timing analysis. The integrated UVLO on VCC and VBS protects the MOSFET during low-voltage cranking events, where the 48 V rail can dip to 24 V momentarily.
推薦
Class-D Audio Amplifier Output Stage
The 2EDL8034G4CXTMA1 drives the half-bridge output MOSFETs of a class-D audio amplifier, where 4 A peak sink current delivers fast low-side turn-off to minimize dead-time distortion. The 120 V boot rating supports 100 V bus rails for high-power 500 W-1000 W subwoofer amplifiers. The exposed-pad DSN-10 footprint keeps the high-current loop small, reducing EMI that could otherwise couple into the audio output and degrade THD+N performance below 0.01%.
推薦
Industrial Brushless DC (BLDC) Motor Drive
For industrial BLDC and PMSM motor drives, the 2EDL8034G4CXTMA1 drives the half-bridge stages of a three-phase inverter from a logic-level FOC controller. Its 4 A sink / 3 A source capability supports MOSFETs with high total gate charge (Qg up to 50 nC) at 50 kHz-100 kHz PWM. The integrated bootstrap and UVLO protection reduce BOM count and improve reliability in industrial automation where field failures carry high service cost.
推薦
Server and Data Center VRM Stage
In server VRM and data center buck converter power stages, the 2EDL8034G4CXTMA1 drives 30 V-60 V-rated MOSFETs from a multiphase PWM controller at 300 kHz-500 kHz. The tight propagation delay matching between HO and LO helps maintain phase-current balance in multiphase VRMs feeding CPUs and GPUs. Its small DSN-10 footprint saves board area in 1U/2U server form factors where PCB real estate is at a premium and thermal headroom is limited.
推薦
Solar Micro-Inverter Half-Bridge Stage
The 2EDL8034G4CXTMA1 suits the half-bridge stage of a solar micro-inverter or string inverter DC-DC converter, where 80 V-100 V MOSFETs process 40 V-60 V PV panel voltage. Its 120 V boot rating covers the open-circuit voltage transients typical at cold PV panel temperatures, and the -40 C cold-start rating matches outdoor inverter deployment. The integrated UVLO prevents MOSFET partial-turn-on under low-light cold-start conditions.
推薦
推薦產品摘要
工程參考資料，適用於 2EDL8034G4CXTMA1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | 2EDL8124GXUMA1 | 2EDL6014ACG2DXTMA1 | 2EDL5023U2DXTMA1 | UCC27211ADDAR | NCP51530ADR2G |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Texas Instruments | onsemi |
| Package | PG-VDSON-10-2 (DSN-10) | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | PG-VDSON-10-2 - same | DSN-10 (PowerPAD) - same footprint | DSN-10 - same footprint |
| Peak Source Current | 3 A | 3 A | 3 A | 2 A | 3 A | 3 A |
| Peak Sink Current | 4 A | 4 A | 4 A | 4 A | 4 A | 4 A |
| Bootstrap Voltage (Max) | 120 V | 120 V | 120 V | 100 V | 120 V | 120 V |
| Integrated Bootstrap Diode | Yes | Yes | Yes | Yes | No (external required) | Yes |
| UVLO Protection | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS | VCC + VBS |
| Automotive Grade | Industrial | Industrial | AEC-Q100 | Industrial | Industrial | Industrial |
| Unit Price (1,000 pcs) | USD 1.71 | USD ~1.80 (newer silicon) | USD ~2.10 (auto grade premium) | USD ~1.55 | USD ~1.95 | USD ~2.00 |
主要差異化特點
- Integrated bootstrap diode eliminates external component (對比UCC27211ADDAR)
- Family upgrade path within same footprint (對比2EDL5023U2DXTMA1)
- Industrial-grade price advantage vs automotive variant (對比2EDL6014ACG2DXTMA1)
設計說明
Keep the bootstrap capacitor (typically 0.1 uF to 1 uF ceramic, X7R) within 5 mm of the VBS pin to minimize parasitic inductance. The high-side gate-drive loop area (HO -> gate -> source -> VS) should be minimized to avoid ringing that can overshoot VBS above its 120 V absolute maximum. Place the VCC decoupling capacitor (1 uF ceramic minimum) directly at the VCC pin to suppress switching noise coupling into the logic input thresholds.
The PG-VDSON-10-2 package with exposed pad has a typical theta_JB of approximately 10 C/W when soldered to a 1 oz copper pad of at least 25 mm x 25 mm. Estimated: at 50 kHz switching with 4 A peak gate current and 50 nC Qg, total gate-drive loss is approximately 0.1 W per channel; combined with quiescent current, the IC dissipates ~0.25 W in a typical half-bridge. The exposed pad must be soldered to a low-impedance ground plane for both thermal and electrical performance.
Do not exceed the 120 V absolute maximum on VBS even during transient ringing; in 80 V bus designs, add a small RC snubber (10 ohm + 1 nF) across the high-side MOSFET to damp VS-node overshoot. Do not operate the high-side switch without a charged bootstrap capacitor - this will leave the MOSFET in linear mode and cause catastrophic thermal failure. Always include adequate dead-time in the upstream PWM controller to prevent HO and LO cross-conduction, even though the 2EDL8034 internal logic prevents simultaneous high output.
合規資訊
RoHS and lead-free per Infineon product page. Not AEC-Q100 qualified - choose 2EDL6014ACG2DXTMA1 for automotive applications.
