MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP
MPN： MRFG35010NT1 ✗ 停產MRFG35010NT1 概覽
A GaAs pHEMT (Pseudomorphic High Electron Mobility Transistor) is a III-V compound-semiconductor field-effect transistor in which a strained InGaAs channel is grown on a GaAs substrate. The high electron mobility and saturation velocity of this heterojunction translate directly into high cut-off frequency and excellent high-frequency gain, which is why pHEMT devices are widely used as drivers, low-noise amplifiers, and small-signal RF building blocks in microwave systems from 1 GHz to beyond 40 GHz. In a transmitter lineup, a pHEMT driver such as the MRFG35010NT1 sits between the frequency-conversion stage and the higher-power final amplifier.
Key features include a 15 V drain-source voltage rating, 3.55 GHz operating frequency, 10 dB associated power gain at the test condition, an unmatched common-source configuration for design flexibility, and a flanged ceramic PLD-1.5 package with bolted heat-sinking. The device is specified at a 2.9 A continuous drain-current rating and is characterized for linear Class AB operation in driver stages.
Typical applications include WLL (Wireless Local Loop) base-station driver stages, MMDS (Multichannel Multipoint Distribution Service) transmitters, UMTS driver amplifiers, and BWA (Broadband Wireless Access) front ends at 3.5 GHz. The GaAs pHEMT process allows the part to deliver useful gain where silicon LDMOS would not perform efficiently at this band.
When designing with this part, the device must be matched externally because it is supplied unmatched. Source and load networks are required to transform the optimum load impedance to 50 Ω. Adequate DC blocking, bias sequencing, and thermal management are essential because the flanged package must be bolted to a heatsink for reliable CW operation at 9 W output.
直接替換替代品，適用於 MRFG35010NT1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MRFG35010NT1 （相同外形與佔位） — 差異在於 Mounting Type, Transistor Type, Configuration, Manufacturer, Operating Mode.
MRFG35010ANT1
✅ 直接替換📋 參考替代品（不在目錄中）
MRFG35010MT1
✅ 直接替換📋 參考替代品（不在目錄中）
MRFG35010AR5
✅ 直接替換聯絡詢價
查看資料表 →MRFG35010
✅ 直接替換📋 參考替代品（不在目錄中）
MRF6S21100HR3
✅ 直接替換聯絡詢價
查看資料表 →MRFG35010NT1 最大額定值與電氣特性
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) |
| Part Number | MRFG35010NT1 |
| 電晶體類型 | GaAs pHEMT RF Power FET |
| Drain-Source Voltage Rating (Vds) | 15 V |
| Continuous Drain Current Rating | 2.9 A |
| Operating Frequency | 3.55 GHz |
| Frequency Range | 1.8 GHz to 3.6 GHz |
| Test Voltage | 12 V |
| Test Current (quiescent) | 180 mA |
| Associated Power Gain | 10 dB at 3.55 GHz |
| Output Power | 9 W at 3.55 GHz |
| Configuration | Unmatched, common source |
| Class of Operation | Class AB linear |
| 封裝 / 外殼 | PLD-1.5 flanged ceramic |
| Supplier Device Package | PLD-1.5 |
| 安裝類型 | Chassis-mount / flange-bolt |
| Lead Free Status | Lead free (per datasheet) |
MRFG35010NT1 pld-1.5 腳位配置指南
MRFG35010NT1（pld-1.5 封裝）的腳位配置。 此功率元件具有閘極、汲極與源極端子。對於非極性封裝，請參閱製造商資料表以取得確切的第 1 腳方向與佈局詳細資訊。常見應用包括電源設計、馬達驅動與負載切換。
無詳細腳位定義資料： MRFG35010NT1.
請參閱 資料表 以查看完整腳位配置。
安全工作區 (Estimated)
典型應用
MRFG35010NT1 適用於 6 應用s: WLL Base Station Driver, MMDS Transmitter Driver, BWA Front-End Driver, UMTS Driver Amplifier, 3.5 GHz Industrial / Test Driver, RF Linear Power Amplifier Sub-Stage.
WLL Base Station Driver
The MRFG35010NT1's 9 W output at 3.55 GHz and 10 dB associated gain place it directly in the driver stage of a 3.5 GHz Wireless Local Loop base-station lineup, where it sits between the frequency-conversion stage and the higher-power final amplifier. The GaAs pHEMT process delivers higher small-signal gain than silicon LDMOS at this band, which reduces the number of driver stages required. Placed on a flanged PLD-1.5 heatsink with external source/load matching, the part provides a clean 9 W drive with sufficient linear headroom for OFDM-style WLL modulation.
推薦
MMDS Transmitter Driver
In MMDS (Multichannel Multipoint Distribution Service) transmitters at 3.5 GHz, the MRFG35010NT1 functions as a 9 W linear driver whose 10 dB gain shapes the signal before the high-power final stage. The GaAs pHEMT's high electron mobility gives the part excellent linearity under multi-carrier QAM loading, which is critical for MMDS downstream links. Operated at Vds = 12 V and Idq = 180 mA in Class AB, the MRFG35010NT1 supplies the drive level needed to push an LDMOS or GaN final amplifier into its linear region.
推薦
BWA Front-End Driver
Broadband Wireless Access (BWA) front-ends at 3.4-3.6 GHz use the MRFG35010NT1 as a 9 W driver whose GaAs pHEMT core provides 10 dB of small-signal gain and strong linearity. The wide 1.8-3.6 GHz operating window allows the same part to cover BWA bands across regions, simplifying the BOM for global platforms. Mounted on a flanged heatsink and matched externally, the part drops into the front-end driver position without requiring an internally-matched variant.
推薦
UMTS Driver Amplifier
UMTS driver amplifiers at the 3.5 GHz band benefit from the MRFG35010NT1's GaAs pHEMT 10 dB gain block at 9 W output, which provides the headroom required before a higher-power final stage. Class AB operation preserves linearity for WCDMA modulation while still delivering meaningful CW output for drive-up characterization. Because the part is unmatched, the designer can tailor the input and output matching for UMTS-specific source and load impedances.
推薦
3.5 GHz Industrial / Test Driver
Test and measurement systems and industrial RF sources at 3.5 GHz can use the MRFG35010NT1 as a stable 9 W GaAs pHEMT driver whose datasheet-characterized 10 dB gain at 12 V / 180 mA enables repeatable driver-up characterization. The unmatched configuration lets the lab designer add instrument-grade matching networks, attenuators, or isolators as needed. The flanged PLD-1.5 package bolts to a chassis-mount heatsink, simplifying integration into bench instrumentation.
推薦
RF Linear Power Amplifier Sub-Stage
Inside a wider 3.5 GHz linear power-amplifier module the MRFG35010NT1 acts as a sub-stage that provides 9 W of drive with 10 dB of GaAs pHEMT gain, isolating the frequency-conversion chain from the final-stage load variations. Its Class AB bias and unmatched package allow the design engineer to integrate the matching into a multi-stage microstrip or stripline network on the same substrate. Combined with its thermal flange, the part is a compact intermediate-power stage in modular PA designs.
推薦
推薦產品摘要
工程參考資料，適用於 MRFG35010NT1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MRFG35010ANT1 | MRFG35010MT1 | MRFG35010AR5 | MRFG35010 | MRF6S21100HR3 |
|---|---|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | PLD-1.5 flanged ceramic | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | PLD-1.5 - same | NI-780 flanged ceramic (same mounting class) |
| Process Technology | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | GaAs pHEMT | Silicon LDMOS |
| Operating Frequency | 3.55 GHz | 3.55 GHz | 3.55 GHz | 3.55 GHz | 3.55 GHz | 2.11 GHz (different band) |
| Output Power | 9 W | 9 W | 9 W | 9 W | 9 W | 100 W |
| Power Gain | 10 dB | 10 dB | 10 dB | 10 dB | 10 dB | ~16 dB |
| Test Voltage | 12 V | 12 V | 12 V | 12 V | 12 V | 28 V |
| Drain-Source Voltage Rating | 15 V | 15 V | 15 V | 15 V | 15 V | 65 V |
| Configuration | Unmatched, common source | Unmatched, common source | Unmatched, common source | Unmatched, common source | Unmatched, common source | Internally matched input, unmatched output |
| Lifecycle Status | Obsolete | Active | Obsolete | Obsolete | Obsolete | Active |
主要差異化特點
- GaAs pHEMT process delivers 10 dB gain at 3.55 GHz where silicon LDMOS rolls off (對比MRF6S21100HR3)
- NXP-recommended successor available as drop-in (對比MRFG35010ANT1)
- Unmatched package gives full matching freedom at 3.5 GHz (對比Internally-matched GaAs pHEMT competitors)
設計說明
The MRFG35010NT1's PLD-1.5 flanged ceramic package must be bolted to a metal heatsink or copper spreader to keep the channel junction temperature within safe limits. Estimated: at 9 W CW output and 35% drain efficiency the part dissipates roughly 17 W of waste heat into the flange; consult the datasheet for the exact thermal resistance (theta_JC) and derating curves before final mechanical layout.
Because the part is supplied unmatched, both source-pull and load-pull matching networks are required at the RF input and output. Per the NXP datasheet, the matching networks must present the optimum source and load impedances derived from the device's S-parameters and load-pull contours at 3.55 GHz. Use microstrip or stripline on the chosen RF substrate and place DC-blocking capacitors as close to the gate and drain leads as possible.
A common design pitfall is assuming the MRFG35010NT1 is internally matched because it ships in a flanged ceramic package - it is not, and external matching is mandatory. Another pitfall is bias sequencing without proper gate protection; the gate must be brought up before the drain to avoid forward-biasing the Schottky gate. Per the NXP datasheet, gate bias should be applied first with a small negative voltage and then ramped to the quiescent point to prevent oscillation.
合規資訊
Datasheet declares the part lead-free. Formal RoHS, REACH, and halogen-free status is not explicitly published for this obsolete NXP part and is left as 'unknown' pending distributor confirmation.
