MRFG35010NT1 vs MRF6S21100HR3 比較
詳細並排比較 MRFG35010NT1 由 NXP Semiconductors 與 MRF6S21100HR3 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | MRFG35010NT1 | MRF6S21100HR3 |
|---|---|---|
| 品牌 | NXP Semiconductors | NXP Semiconductors |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | Obsolete | 啟用中 |
| Manufacturer | NXP Semiconductors (formerly Freescale Semiconductor) | — |
| Part Number | MRFG35010NT1 | — |
| 電晶體類型 | GaAs pHEMT RF Power FET | LDMOS (N-Channel Enhancement-Mode Lateral MOSFET) |
| Drain-Source Voltage Rating (Vds) | 15 V | — |
| Continuous Drain Current Rating | 2.9 A | — |
| Operating Frequency | 3.55 GHz | — |
| Frequency Range | 1.8 GHz to 3.6 GHz | — |
| Test Voltage | 12 V | — |
| Test Current (quiescent) | 180 mA | — |
| Associated Power Gain | 10 dB at 3.55 GHz | — |
| Output Power | 9 W at 3.55 GHz | — |
| Configuration | Unmatched, common source | Single |
| Class of Operation | Class AB linear | — |
| 封裝 / 外殼 | PLD-1.5 flanged ceramic | — |
| Supplier Device Package | PLD-1.5 | — |
| 安裝類型 | Chassis-mount / flange-bolt | Surface Mount / bolt-down flange |
| Lead Free Status | Lead free (per datasheet) | [DATA_NEEDED: RoHS/lead-free explicit statement] |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: explicit RoHS compliance statement] |
| Frequency Band | — | 2.11 GHz to 2.17 GHz |
| Output Power (Average) | — | 23 W (W-CDMA, CW equivalent ~100 W PEP) |
| Power Gain (Typ) | — | 15.9 dB at 2.14 GHz |
| Drain-Source Voltage Rating (VDS max) | — | 68 V |
| Test Supply Voltage (VDD) | — | 28 V |
| Quiescent Drain Current (IDQ) | — | 950 mA |
| Test Drain Current | — | 950 mA |
| 封裝 | — | NI-780H-2L (ceramic flange) |
| Maximum Power Dissipation (Abs) | — | 388 W |
| Operating Mode | — | Class AB (PCN/PCS/cellular, WLL, TD-SCDMA) |
| Terminal Position | — | Dual |