MRFG35010NT1 vs MRFG35010AR5 比較

詳細並排比較 MRFG35010NT1 由 NXP Semiconductors 與 MRFG35010AR5 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MRFG35010NT1 MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 - 9W GaAs PHEMT RF Power FET, 3.55 GHz | NXP

MRFG35010NT1 Obsolete
NXP Semiconductors
MRFG35010AR5 MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 - 3.5 GHz pHEMT RF Power FET, 10dB Gain | NXP

MRFG35010AR5 ✓ 啟用中

規格比較

參數 MRFG35010NT1 MRFG35010AR5
品牌 NXP Semiconductors NXP Semiconductors
類別 MOSFETs Transistors
生命週期狀態 Obsolete 啟用中
Manufacturer NXP Semiconductors (formerly Freescale Semiconductor) NXP Semiconductors (formerly Freescale)
Part Number MRFG35010NT1 —
電晶體類型 GaAs pHEMT RF Power FET pHEMT GaAs RF Power FET (N-Channel)
Drain-Source Voltage Rating (Vds) 15 V —
Continuous Drain Current Rating 2.9 A —
Operating Frequency 3.55 GHz —
Frequency Range 1.8 GHz to 3.6 GHz —
Test Voltage 12 V —
Test Current (quiescent) 180 mA —
Associated Power Gain 10 dB at 3.55 GHz —
Output Power 9 W at 3.55 GHz —
Configuration Unmatched, common source Single N-channel die
Class of Operation Class AB linear —
封裝 / 外殼 PLD-1.5 flanged ceramic —
Supplier Device Package PLD-1.5 —
安裝類型 Chassis-mount / flange-bolt Surface Mount (with bolted heatsink)
Lead Free Status Lead free (per datasheet) —
RoHS 狀態 [DATA_NEEDED: RoHS status] [DATA_NEEDED: rohs status]
Frequency — 3.55 GHz (typical), 3.4-3.8 GHz band
Drain Voltage (Vds) Rated — 15 V
Drain Current Rating — 2.9 A (pulsed)
Quiescent Drain Current (Idq) — 140 mA
Output Power (Pout) — 1 W (CW)
Power Gain — 10 dB (typical at 3.55 GHz)
Technology — GaAs pseudomorphic HEMT
封裝 — NI-360HF (ceramic flange, surface mount)
Operating Mode — Class AB (typical RF PA)
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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