MT41K256M16HA-187EM:E - 4Gb DDR3L SDRAM 256Mx16 | Micron
MPN： MT41K256M16HA-187EM:E ✓ 啟用中MT41K256M16HA-187EM:E 概覽
DDR3L SDRAM (Low Voltage DDR3) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard DDR3 (1.5V). It is part of the DDR3 memory family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is backward compatible with DDR3, allowing operation in 1.5V mode when needed.
Key features include a 16n prefetch architecture, on-die termination (ODT), programmable CAS latency, and burst lengths of 8 and 4 (with burst chop). The device supports auto-refresh and self-refresh modes, and includes a temperature-compensated self-refresh (TCSR) for reduced power in idle states. The 96-ball FBGA package provides excellent thermal and electrical performance, with a ball pitch of 0.8mm.
The MT41K256M16HA-187EM:E operates over a temperature range of 0°C to +95°C (TC) and is RoHS compliant. It features a 1.35V core and I/O supply, with a VDDQ of 1.35V. The device is compatible with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers.
Typical applications include servers, networking equipment, industrial PCs, and embedded systems where low power and high density are critical. The 4Gb density and x16 organization make it ideal for memory modules and systems requiring 256M x 16 configuration.
When designing with this device, ensure proper decoupling capacitors near the VDD and VDDQ pins, and follow the PCB layout guidelines in the Micron datasheet to minimize signal integrity issues. The device supports a 1.5V compatible mode, allowing it to be used in systems designed for standard DDR3.
直接替換替代品，適用於 MT41K256M16HA-187EM:E — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： MT41K256M16HA-187EM:E （相同外形與佔位） — 差異在於 CAS Latency, Supply Voltage, Clock Frequency, Package, Access Time.
MT41K256M16HA-125:E
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-107G:E
✅ 直接替換聯絡詢價
查看資料表 →MT41K256M16HA-187EIT:E
✅ 直接替換📋 參考替代品（不在目錄中）
MT41K256M16TW-107AAT:P
✅ 直接替換📋 參考替代品（不在目錄中）
H5TC4G63MFR-G7C
✅ 直接替換 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
MT41K256M16HA-187EM:E 最大額定值與電氣特性
| 記憶體類型 | DDR3L SDRAM |
| 記憶體容量 | 4 Gbit |
| 組織 | 256M x 16 |
| 供應電壓 | 1.35 V |
| 資料速率 | 1866 MT/s |
| CAS 延遲 | 13 |
| 封裝 | 96-FBGA (9x14 mm) |
| 工作溫度 | 0°C to +95°C (TC) |
| 安裝類型 | Surface Mount |
| RoHS 狀態 | Compliant |
| REACH Status | Compliant |
| Access Time | 20 ns |
| Clock Frequency | 933 MHz |
| 介面 | Parallel |
| 腳位數 | 96 |
MT41K256M16HA-187EM:E 腳位配置
| 腳位 A1 | VDD — Power supply (1.35V) |
| 腳位 A2 | DQ0 — Data input/output 0 |
| 腳位 A3 | DQ1 — Data input/output 1 |
| 腳位 A4 | VSS — Ground |
| 腳位 B1 | VDDQ — I/O power supply (1.35V) |
| 腳位 B2 | DQ2 — Data input/output 2 |
| 腳位 B3 | DQ3 — Data input/output 3 |
| 腳位 B4 | VSSQ — I/O ground |
| 腳位 C1 | VDD — Power supply (1.35V) |
| 腳位 C2 | DQ4 — Data input/output 4 |
| 腳位 C3 | DQ5 — Data input/output 5 |
| 腳位 C4 | VSS — Ground |
典型應用
MT41K256M16HA-187EM:E 適用於 6 應用s: Server Memory Modules, Networking Equipment, Industrial PCs, Embedded Systems, Consumer Electronics, Automotive Infotainment.
Server Memory Modules
The MT41K256M16HA-187EM:E provides high-density, low-power memory for server DIMMs. Its 4Gb density and x16 organization enable compact module designs, while the 1.35V operation reduces power consumption in data centers. The 1866 MT/s data rate supports high-bandwidth workloads, and the FBGA package ensures reliable operation in server environments.
推薦
Networking Equipment
In networking switches and routers, the MT41K256M16HA-187EM:E offers the speed and capacity needed for packet buffering and forwarding tables. Its low voltage and high data rate help meet power budgets, while the 96-ball FBGA package fits space-constrained line cards. The device's compatibility with DDR3L controllers simplifies integration.
推薦
Industrial PCs
Industrial PCs require reliable memory that can operate in harsh environments. The MT41K256M16HA-187EM:E operates from 0°C to +95°C, making it suitable for factory floors and outdoor installations. Its 1.35V operation reduces heat generation, and the 4Gb density supports demanding industrial applications like machine vision and process control.
推薦
Embedded Systems
For embedded systems requiring high memory bandwidth, the MT41K256M16HA-187EM:E delivers 1866 MT/s in a compact FBGA package. Its low power consumption is ideal for battery-powered devices, and the x16 organization simplifies PCB routing. The device supports auto-refresh and self-refresh modes for efficient power management.
推薦
Consumer Electronics
In high-end consumer devices like smart TVs and gaming consoles, the MT41K256M16HA-187EM:E provides the memory capacity and speed for smooth multimedia performance. Its 1.35V operation helps meet energy efficiency standards, and the 96-ball FBGA package is suitable for slim device designs. The device's compatibility with DDR3L controllers ensures easy integration.
推薦
Automotive Infotainment
The MT41K256M16HA-187EM:E is suitable for automotive infotainment systems that require high memory bandwidth for navigation, audio, and video processing. Its operating temperature range of 0°C to +95°C covers most automotive cabin environments, and the low voltage reduces power consumption. The FBGA package withstands vibration and thermal cycling.
推薦
推薦產品摘要
工程參考資料，適用於 MT41K256M16HA-187EM:E — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | MT41K256M16HA-125:E | MT41K256M16HA-107G:E | H5TC4G63MFR-G7C |
|---|---|---|---|---|
| Package | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) | 96-FBGA (9x14 mm) |
| Brand | Micron Technology | Micron Technology | Micron Technology | SK Hynix |
| Memory Size | 4 Gbit | 4 Gbit | 4 Gbit | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | 1.35 V | 1.35 V | 1.35 V |
| Data Rate | 1866 MT/s | 1600 MT/s | 1066 MT/s | 1866 MT/s |
| CAS Latency | 13 | 11 | 7 | 13 |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
主要差異化特點
- Higher data rate (1866 MT/s) compared to MT41K256M16HA-107G:E (對比MT41K256M16HA-107G:E)
- Low voltage operation (1.35V) reduces power consumption (對比Standard DDR3 (1.5V))
- Industrial temperature grade option available (MT41K256M16HA-187EIT:E) (對比MT41K256M16HA-187EM:E)
設計說明
Place decoupling capacitors (0.1uF and 1uF) close to each VDD and VDDQ pin to minimize power supply noise. Follow the layout guidelines in the Micron datasheet for DDR3L, including controlled impedance traces for DQ, DQS, and address/command signals. Ensure proper termination for the data bus.
The MT41K256M16HA-187EM:E operates up to +95°C. Ensure adequate airflow or heatsinking in high-temperature environments. The FBGA package has a thermal resistance that should be considered; refer to the datasheet for thermal characteristics and derating curves.
For 1866 MT/s operation, maintain signal integrity by using proper PCB stack-up, impedance matching, and minimizing trace length mismatches. Use on-die termination (ODT) settings as recommended in the datasheet to reduce reflections. Simulate the memory bus to verify timing margins.
合規資訊
RoHS and REACH compliant per distributor data. Conflict minerals status is compliant per Abacus Technologies.
