TPS51200QDRCRQ1 - 3A DDR Termination Regulator | TI | Automotive AEC-Q100
MPN： TPS51200QDRCRQ1 ✗ 停產TPS51200QDRCRQ1 概覽
A DDR termination regulator (VTT regulator) is a specialized linear regulator that powers the termination rail of DDR memory buses. Unlike a standard LDO, it must both source and sink current to hold the termination voltage at VDDQ/2 during bus transitions, which is essential for signal integrity on DDR2, DDR3, DDR3L, and DDR4 interfaces. It sits within the memory power-management hierarchy alongside switching regulators and reference generators.
Key features include a 2.5V to 6.5V input range, VTT output tracking of VTTREF within +/-25 mV for both DC and AC conditions, continuous sink/source current of +/-2 A with 3 A peak capability, remote sensing to compensate PCB trace drops, and an integrated VLDO output for VTTREF generation. AEC-Q100 qualification covers -40C to +105C operation for automotive environments.
Architecturally, the TPS51200-Q1 uses a high-bandwidth sink/source amplifier with a precision reference, giving excellent load and line regulation with minimal external components. The enable pin supports power sequencing (S3/S5 support), and the soft-start limits inrush current at startup.
Typical applications include DDR memory termination in automotive infotainment, ADAS domains, telematics ECUs, and industrial/networking equipment using DDR memory.
Design tip: place input and output ceramic capacitors close to the pins, connect the exposed pad to a generous copper area for thermal dissipation, and drive the EN pin from a sequenced logic rail for multi-rail systems. Pricing data as of 2026-08-29.
直接替換替代品，適用於 TPS51200QDRCRQ1 — 相同封裝，腳位對腳位相容。需重新設計 PCB 的不同封裝零件不列入。
此系列的變體
與下列產品可直接替換的同系列型號： TPS51200QDRCRQ1 （相同外形與佔位） — 差異在於 Input Voltage Range, Minimum Output Capacitance, Package, VTTREF Output.
TPS51200DRCR
✅ 直接替換聯絡詢價
查看資料表 →TPS51200MDRCTEP
✅ 直接替換📋 參考替代品（不在目錄中）
LP2998MRX/NOPB
⚡ 相同封裝 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
NCP51200MNTXG
✅ 直接替換📋 參考替代品（不在目錄中）
APW7120
⚡ 相同封裝 ⚠️ 規格未經驗證📋 參考替代品（不在目錄中）
TPS51200QDRCRQ1 最大額定值與電氣特性
| 功能 | Sink/Source DDR Termination Regulator (VTT) |
| 輸入電壓範圍 | 2.5 V to 6.5 V |
| VTT Output Tracking | VTTREF -25 mV < VTT < VTTREF +25 mV |
| Continuous Output Current | -2 A to +2 A (sink/source) |
| Peak Output Current | 3 A |
| Minimum Output Capacitance | 20 uF |
| 工作溫度 | -40C to +105C (AEC-Q100 Grade 1) |
| Automotive Qualification | AEC-Q100 |
| Remote Sensing | Yes |
| VTTREF Output | Yes (integrated VLDO) |
| 致能腳位 | Yes (S3/S5 support) |
| 封裝 | VSON-10 (3x3 mm) with exposed pad |
| 安裝類型 | Surface Mount |
| DDR Support | DDR2, DDR3, DDR3L, DDR4 |
| RoHS 狀態 | Compliant |
TPS51200QDRCRQ1 腳位配置
| 腳位 1 | VDD — Input supply, 2.5 V to 6.5 V |
| 腳位 2 | VTT — Termination regulator output (sink/source) |
| 腳位 3 | PGND — Power ground for VTT output stage |
| 腳位 4 | VOSNS — VTT remote sense input |
| 腳位 5 | GND — Analog/signal ground |
| 腳位 6 | EN — Enable input for power sequencing (S3/S5) |
| 腳位 7 | VLDOIN — Supply input for VLDO (VTTREF) regulator |
| 腳位 8 | VTTREF — Reference voltage output (VDDQ/2) |
| 腳位 9 | VTTSNS — VTTREF sense input |
| 腳位 10 | AGND — Analog ground reference |
| 腳位 11 | PAD — Exposed thermal pad - connect to GND copper pour |
典型應用
TPS51200QDRCRQ1 適用於 6 應用s: Automotive Infotainment DDR Termination, ADAS Domain Controller Memory Power, DDR3/DDR4 Memory Bus Termination, Telematics and Gateway ECUs, Industrial and Networking Equipment, Battery-Powered Portable Compute.
Automotive Infotainment DDR Termination
The TPS51200QDRCRQ1 is purpose-built for VTT termination rails in automotive infotainment SoC and DRAM subsystems. Its +/-25 mV VTT-to-VTTREF tracking window (DC and AC) directly meets DDR3/DDR4 signal-integrity requirements, while +/-2 A sink/source capability absorbs bidirectional bus currents during read/write bursts. Placed between the VDDQ rail (divided to VDDQ/2 via the integrated VTTREF VLDO) and the DRAM termination resistors, it needs only 20 uF of output capacitance, saving board space. AEC-Q100 Grade 1 (-40C to +105C) coverage suits cockpit electronics.
推薦
ADAS Domain Controller Memory Power
In ADAS domain controllers, image processors and safety MCUs rely on stable DDR memory buses. The TPS51200QDRCRQ1 provides the termination rail with remote sensing, compensating PCB trace drops between the regulator and dense DRAM clusters to keep VTT accurate at the load. Its fast transient response and low output impedance hold the +/-25 mV tracking window through heavy bus switching, preventing eye-diagram degradation. The EN pin supports power sequencing with S3/S5 sleep states, and only 20 uF of output capacitance is required, easing dense ADAS board layouts.
推薦
DDR3/DDR4 Memory Bus Termination
For general DDR2/DDR3/DDR3L/DDR4 designs, the TPS51200QDRCRQ1 generates VTT at VDDQ/2 using its integrated VTTREF VLDO or an external reference. A DDR termination regulator must both source and sink current as the address/data bus toggles; the TPS51200-Q1 handles -2 A to +2 A continuously with 3 A peaks while tracking VTTREF within +/-25 mV. This bidirectional capability and 20 uF minimum output capacitance distinguish it from ordinary LDOs, ensuring clean signal integrity for high-speed memory interfaces in computing and networking boards.
推薦
Telematics and Gateway ECUs
Telematics and gateway ECUs combine connected processors with DDR memory exposed to harsh automotive voltage and temperature environments. The TPS51200QDRCRQ1 accepts a 2.5 V to 6.5 V input, pairing naturally with 3.3 V or 5 V pre-regulated rails from a main automotive PMIC. Its AEC-Q100 qualification and -40C to +105C range align with under-dash ECU requirements, while remote sensing maintains VTT accuracy at the memory despite trace losses. The soft-start limits inrush on battery-backed S3 rails where power budget is critical.
推薦
Industrial and Networking Equipment
Industrial PCs, switches, and network line cards using DDR memory can adopt the pin-compatible non-Q sibling TPS51200DRCR or reuse TPS51200QDRCRQ1 inventory. The regulator's 3 A peak capability covers high-density DIMM or soldered-DRAM termination loads, and its low-noise linear architecture introduces no switching ripple into the sensitive termination rail - an advantage over DC-DC based VTT solutions. Layout is straightforward: one 20 uF+ ceramic output bank, remote sense lines to the DRAM, and thermal pad to ground pour.
推薦
Battery-Powered Portable Compute
Portable and battery-backed designs benefit from the TPS51200-Q1's low quiescent current and S3/S5 enable support, which allow the termination regulator to be disabled in sleep states to save power. The 2.5 V to 6.5 V input tolerates 2-cell Li-ion stacks or 5 V rails, and the compact 3x3 mm VSON-10 with only 20 uF of output capacitance fits space-constrained modules such as automotive telematics dongles and embedded compute SOMs. Fast transient response preserves DDR signal integrity during wake transitions from low-power states.
推薦
推薦產品摘要
工程參考資料，適用於 TPS51200QDRCRQ1 — 比較、設計指引及合規資訊。
選型指南
與替代品比較
| 參數 | 本產品 | TPS51200DRCR | TPS51200MDRCTEP | NCP51200MNTXG |
|---|---|---|---|---|
| Package | VSON-10 (3x3 mm) EP | VSON-10 (3x3 mm) - same | VSON-10 (DRC) - same | VSON-10 / WSON-10 - same footprint |
| Brand | Texas Instruments | Texas Instruments | Texas Instruments | onsemi |
| Output Current | +/-2 A continuous, 3 A peak | +/-2 A continuous, 3 A peak | +/-2 A continuous, 3 A peak | +/-2 A class |
| Automotive Qualification | AEC-Q100 (-40C to +105C) | Not AEC-Q100 | Enhanced Product (HiRel) | Industrial grade |
| Lifecycle Status | Discontinued by TI (06/2019) | Active | Active | Active |
主要差異化特點
- AEC-Q100 automotive qualification (對比TPS51200DRCR)
- Integrated VTTREF VLDO plus remote sensing (對比APW7120)
- Active production availability (對比TPS51200QDRCRQ1)
設計說明
Place the minimum 20 uF low-ESR ceramic output bank directly at the VTT and PGND pins, accounting for MLCC DC-bias derating (e.g., 2x10 uF 10V 0805 X7R may deliver under 20 uF effective at VTT bias). Route the VOSNS remote-sense pair as a Kelvin connection to the DRAM termination network, not to the regulator output node, so trace drops do not degrade the +/-25 mV tracking window.
The exposed pad of the VSON-10 (DRC) package is the primary heat path for the +/-2 A sink/source stage. Solder it to at least a 2x2 via-fan-out ground pour on a 4-layer board. At VTT=0.75 V with 1.5 A continuous sink during bus idle-to-active transitions, junction rise stays manageable with the pad connected; a floating pad can cause thermal shutdown during sustained sink current tests.
Drive EN from a sequenced logic rail to implement S3/S5 sleep states; do not hard-tie EN to VDD if the memory controller enters self-refresh with the bus idle, since sink capability is required to discharge residual termination energy. Verify the VLDOIN supply for the VTTREF generator is present whenever VTT is enabled, otherwise the tracking reference is undefined at startup.
The TPS51200QDRCRQ1 is discontinued by TI since June 2019 (Mouser: DISC-BY-MFG-06/19). For new automotive designs, qualify TPS51200MDRCTEP or the pin-compatible onsemi NCP51200MNTXG as the active-production source; for non-automotive builds, the TPS51200DRCR is the natural drop-in. Mixing grades within one program causes qualification mismatch - standardize one grade per platform.
合規資訊
AEC-Q100 automotive qualified per Arrow listing. RoHS/lead-free per standard TI packaging; verify REACH/halogen status on TI product page.
