MOSFET
产品（1287)
BSC050N03LSGATMA1 - 30V 80A 5mOhm OptiMOS 3 N-FET | Infineon
The Infineon BSC050N03LSGATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 platform, rated at 30 V drain-source breakdown with a maximum 80 A continuous drain current (Tc) and an industry-leading 5 mOhm maximum on-state resistance in a SuperSO8 5x6 (PG-TDSON-8-5) surface-mount package. The combination of ultra-low gate charge, low output charge, and best-in-class RDS(on) in a small footprint makes it the leading choice for high-frequency voltage regulator modules in server, datacom, and telecom power-conversion stages. A power MOSFET is a voltage-controlled switch used to efficiently route or regulate current in switching power supplies, motor drives, and load-management circuits. Within the discrete-semiconductor hierarchy it sits below IGBTs in the family tree of voltage-controlled power switches, and within Infineon's product taxonomy it belongs to the OptiMOS 3 30 V N-channel family, which itself derives from the broader OptiMOS power-management platform. Its primary role is synchronous-rectifier or control-FET duty in DC-DC converter power stages where conduction loss and switching loss must both be minimized. Key electrical characteristics include a 30 V VDS maximum rating, a 5 mOhm maximum RDS(on) at VGS = 10 V, an 80 A continuous drain current at case temperature, a 50 W power dissipation rating at Tc = 25 C, and an optimized gate-charge profile designed for high-frequency buck, synchronous-buck, and OR-ing applications. The SuperSO8 5x6 footprint exposes a substantial source pad that doubles as the primary thermal dissipation path, allowing the die to deliver high current without a separate heatsink. The device uses Infineon's trench MOSFET process technology, which achieves a per-cell on-resistance significantly lower than planar MOSFETs of equivalent die size. The SuperSO8 package pairs a flip-chip-style die attach with a low-inductance lead frame, reducing source inductance and improving switching performance in multi-MHz synchronous-rectifier positions. Typical applications include synchronous-rectifier stages in 12 V-input buck converters for servers and telecom brick modules, high-side and low-side switches in point-of-load regulators, battery-management protection FETs, and OR-ing FETs in redundant power architectures. Its low gate charge and Qgd also suit motor-control and Class-D audio amplifier output stages where switching losses dominate thermal budgets. When designing with this part, pay close attention to the gate-drive voltage. The OptiMOS 3 30 V platform is specified for full enhancement at VGS = 10 V, and a 4.5 V drive is only suitable for low-current applications because RDS(on) rises sharply at reduced gate drive. Use a dedicated gate-driver IC and place the bootstrap or charge-pump supply as close to the gate pin as possible to minimize ringing and unintended shoot-through. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a single reference for evaluating BSC050N03LSGATMA1 against its same-family and competitor equivalents in the 30 V N-channel SuperSO8 segment.
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
The Infineon BSC050N04LSGATMA1 is an N-Channel 40V OptiMOS 3 power MOSFET delivering 18A continuous drain current at 25C ambient (Ta) and up to 85A at 25C case temperature (Tc), housed in the surface-mount PG-TDSON-8-5 (TDSON-8 EP) package with an exposed thermal pad. The device dissipates 2.5W at Ta and 57W at Tc, with an industry-leading low on-state resistance optimized for high-efficiency synchronous rectification and point-of-load conversion in the 30V-to-40V bus voltage class. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal semiconductor switch that uses an insulated gate to modulate the conductivity of an N-channel or P-channel conduction path between source and drain. N-channel MOSFETs are the dominant choice for low-voltage, high-current switching applications because electrons (the majority carrier) offer roughly 2-3x higher mobility than holes, yielding lower RDS(on) per unit silicon area. Within the broader taxonomy, the BSC050N04LSGATMA1 sits in the OptiMOS 3 family -> trench MOSFET -> power MOSFET -> discrete semiconductor. Key features include an optimized trench-cell geometry with sub-10V gate drive compatibility, avalanche-rated single-pulse energy capability, and a Kelvin-source connection on pin 2 that decouples the gate-drive return path from the high-current source path. The PG-TDSON-8-5 package has a thermal pad that reduces junction-to-board thermal resistance, enabling compact high-current designs without external heatsinks at moderate duty cycles. Technically, the OptiMOS 3 process combines a vertical trench gate with a low-resistance epitaxial drift region, balancing low gate charge (Qg) against low RDS(on) for class-leading figure-of-merit. The part is designed for 12V bus systems such as telecom isolated bus converters, server VRM stages, and OR-ing FET replacement, where it minimizes conduction loss and switching loss simultaneously. Typical applications include synchronous rectification in isolated DC-DC brick converters, secondary-side high-current OR-ing, point-of-load (POL) buck regulators, hot-swap controllers on 36V-40V distribution rails, and Class-D audio amplifier output stages. The 40V rating also provides ample margin for 24V industrial battery systems. When designing with this part, ensure the gate driver can source and sink at least 2A peak to charge the gate capacitance in under 50ns. Use a Kelvin-source connection whenever possible to keep the gate-drive loop decoupled from the high-current source path and avoid shoot-through in synchronous-rectifier bridges. This page synthesizes distributor pricing, drop-in alternatives within the same TDSON-8 footprint, Infineon OptiMOS 3 family cross-references, and practical PCB layout guidance - information not consolidated on any single distributor page.
BSC050NE2LSATMA1 - 25V 58A N-Ch OptiMOS MOSFET | Infineon
The Infineon BSC050NE2LSATMA1 is a 25V N-channel power MOSFET from Infineon's OptiMOS 25V product family, rated at 58A continuous drain current (Tc) and 39A (Ta) in a compact PG-TDSON-8-5 (SuperSO8 5x6) surface-mount package. It delivers a maximum on-resistance of 5 mOhm and dissipates up to 28W at 25°C case temperature, with a typical R_DS(on) of 4.2 mOhm at V_GS=10V. An N-channel power MOSFET is a voltage-controlled semiconductor switch in which the channel is formed by electrons (rather than holes), enabling lower on-resistance per unit silicon area than equivalent P-channel devices. Power MOSFETs sit in the device hierarchy: transistor -> FET -> MOSFET -> power MOSFET -> N-channel power MOSFET, and they are widely used as the low-side or high-side switch in synchronous buck converters, motor drivers, and load-switch circuits where fast switching and low conduction loss are required. Key features of the BSC050NE2LSATMA1 include the OptiMOS 25V trench process for industry-leading figure-of-merit (FOM = R_DS(on) x Q_g), a logic-level gate drive threshold optimized for 4.5V/10V gate drive, an integrated Schottky-like body diode for reduced switching losses in synchronous topologies, and a low thermal resistance package (R_thJA typically below 50°C/W on 1oz copper 1in² pad). The 8-pin TDSON package includes an exposed drain pad for direct PCB thermal dissipation. Architecturally, the device uses a stripe-trench cell design with a very thin gate oxide, giving sub-5 mOhm on-resistance at 10V V_GS while maintaining safe operating area (SOA) for hot-plug and inrush events. Avalanche-rated energy (E_AS) per the manufacturer datasheet supports rugged operation in inductive switching. Typical applications include synchronous buck DC-DC converters for server and telecom point-of-load, USB-PD power-path OR-ing, hot-swap circuits in 12V distributed-power systems, battery protection and load switching in power tools, and high-current motor drive half-bridges in industrial automation. Design tip: keep the gate-drive loop (gate resistor + gate-drive IC output to gate/source) physically tight to minimize parasitic inductance that can ring above V_GS(max) = ±20V during fast switching transitions. Add a 10kohm gate-source pull-down if the gate may float during controller start-up. This page synthesizes distributor pricing as of 2026-09-13, drop-in pin-compatible alternatives, and practical design notes not consolidated on the manufacturer datasheet.
BSC052N08NS5ATMA1 - 80V 95A 5.2mΩ OptiMOS 5 N-FET | Infineon
The Infineon BSC052N08NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 technology, rated for 80 V VDS and 95 A continuous drain current (at Tc) with a maximum on-resistance of 5.2 mΩ at VGS = 10 V, housed in a SuperSO8 (PG-TDSON-8) 5x6 mm surface-mount package. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch used for switching and amplification of electrical signals in power conversion circuits. Within the broader semiconductor taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs. OptiMOS 5 is Infineon's fifth-generation 80 V-300 V power MOSFET platform optimized for synchronous rectification, telecom converters, and high-frequency SMPS stages. Key features include an ultra-low RDS(on) of 5.2 mΩ max (44% reduction versus the previous generation), output capacitance reduced by up to 44% for lower switching losses, a logic-level VGS(th) around 2.5-3.0 V enabling driver-friendly gate drive, and a power dissipation rating of 83 W at Tc (2.5 W at Ta). The OptiMOS 5 cell architecture delivers lower Qg, Qgd, and Qrr figures than its predecessor, enabling faster switching edges and higher efficiency at elevated switching frequencies. The device uses Infineon's advanced trench-gate process with an optimized body diode that minimizes reverse-recovery charge (Qrr). This makes it ideal for the synchronous-rectifier (SR) position in half-bridge and full-bridge topologies, where the body diode otherwise dominates switching loss and can cause shoot-through during dead time. Typical applications include synchronous rectification in 48 V telecom and server point-of-load converters, primary-side switching in telecom DC-DC bricks, motor drive H-bridges, and high-current OR-ing / hot-swap circuits. It is particularly suited for high-switching-frequency (>300 kHz) hard-switched and soft-switched converters where conduction and switching losses must both be minimized. When designing with this device, ensure the gate-driver can source/sink sufficient peak current to charge the gate charge within the desired switching period, and pay attention to PCB layout to minimize source-inductance loop area, which is critical for limiting voltage overshoot and ringing at the drain node. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.
BSC054N04NSGATMA1 - 40V 81A OptiMOS 3 N-Ch MOSFET | Infineon
The Infineon BSC054N04NSGATMA1 is an N-channel OptiMOS 3 power MOSFET rated at 40V VDS and supporting up to 81A continuous drain current at the case (Tc), packaged in a 5x6 mm SuperSO8 (PG-TDSON-8-5) surface-mount land pattern with an exposed thermal pad. The device achieves a maximum on-resistance of 5.4 mOhm at VGS=10V and dissipates up to 57W at Tc=25C, making it one of the lowest-RDS(on) parts in the 40V OptiMOS 3 family. It is specified for 17A continuous drain current at ambient (Ta=25C) with 2.5W power dissipation. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switch that uses a gate voltage to modulate conduction between source and drain. MOSFETs belong to the discrete semiconductor family and are a sub-category of transistors, sitting in the power management and switching converter ecosystem. The OptiMOS 3 family is Infineon's third-generation 40V trench MOSFET platform, positioned between discrete FETs and integrated gate drivers in the power-electronics component hierarchy. Key features include an ultra-low on-resistance of 5.4 mOhm max at VGS=10V, low gate charge Qg for fast switching, and an integrated gate ESD protection structure that improves handling robustness in manufacturing. The PG-TDSON-8-5 (SuperSO8 5x6 mm) package provides an exposed drain pad that doubles as a thermal pad, lowering thermal resistance and supporting the 81A pulsed-current rating. The part is qualified to JEDEC MSL1 standards and is RoHS compliant with lead-free reflow compatibility. The OptiMOS 3 architecture uses an advanced trench cell design that minimizes the RDS(on) x Qg figure of merit, balancing conduction and switching losses. The SuperSO8 package uses wire-bond-free source-down technology on later revisions, but the BSC054N04NSGATMA1 uses standard bond-wire construction with a gull-wing lead frame. This combination yields excellent figure-of-merit performance for high-frequency DC-DC converter applications. Typical applications include synchronous rectification in 12V buck converters for server and telecom point-of-load (POL) regulators, OR-ing and hot-swap circuits in 24V industrial bus systems, motor drive H-bridges for low-voltage brushed and brushless DC motors, and battery protection circuits in multi-cell Li-ion packs. The 40V rating provides ample margin above 19V max USB-PD voltages and 24V industrial rails. When designing with this MOSFET, prioritize minimizing parasitic source-inductance by using short, wide copper pours on the source pads, and ensure the gate-drive voltage reaches at least 10V for full enhancement. A heatsink or substantial copper thermal pad area is required for continuous operation near the 81A pulsed rating. This page synthesizes distributor pricing, drop-in OptiMOS 3 and competitor alternatives in the same PG-TDSON-8-5 footprint, and practical design notes not consolidated in the manufacturer datasheet.
BSC059N04LS6ATMA1 - 40V 59A OptiMOS 6 N-MOSFET | Infineon
The Infineon BSC059N04LS6ATMA1 is an N-channel power MOSFET from Infineon's OptiMOS 6 40 V family, rated for 40 V VDS, up to 59 A pulsed drain current, and a maximum RDS(on) of 5.9 mOhm, housed in a SuperSO8 5x6 (PG-TDSON-8-6) surface-mount package. It combines best-in-class on-resistance with superior switching performance for high-frequency synchronous rectification and motor drive topologies. Key features include a 40 V drain-source breakdown voltage, 5.9 mOhm maximum RDS(on) at VGS=10 V, continuous drain current of 17 A at TA=25C (49 A at TC=25C), pulsed drain current of 59 A at TC=25C, total power dissipation of 3 W at TA=25C and 38 W at TC=25C, and an avalanche-rated body diode for rugged switching transitions. The OptiMOS 6 technology delivers improved Figure of Merit (FOM = RDS(on) x Qg) versus prior generations, enabling higher power density in switched-mode power supplies. The OptiMOS 6 40V power MOSFET family is optimized for synchronous rectification in switched mode power supplies (SMPS) in servers, desktops, and telecom bricks, as well as for DC-DC converters, battery management systems (BMS), motor drives, and OR-ing functions. The SuperSO8 package provides an exposed pad that lowers thermal resistance to the PCB copper pour, supporting 38 W dissipation at 25C case temperature with proper board layout. Compared to the earlier OptiMOS 5 generation, OptiMOS 6 reduces switching losses by approximately 20% through optimized gate charge (Qg) and output capacitance (Coss) characteristics, while maintaining the same 40 V voltage class. This makes the part particularly attractive for high-frequency (>300 kHz) buck and synchronous rectification stages where switching loss dominates total power dissipation. Typical applications include synchronous rectification in server and telecom SMPS, 12 V and 24 V DC-DC point-of-load converters, hot-swap and OR-ing controllers, battery protection and load switching in BMS, and low-voltage motor drive half-bridges. The 5.9 mOhm RDS(on) minimizes conduction loss in high-current 12 V rails. When designing with this device, keep the gate-source voltage below the 20 V VGS(max) rating and provide adequate copper pour (typically 1 in2 minimum) to keep thermal resistance within budget. Use a gate driver with sufficient source/sink current (typically >1 A peak) to fully exploit the switching speed advantage of OptiMOS 6.
BSC059N04LSGATMA1 - 40V 73A 5.9mOhm N-Ch OptiMOS 3 | Infineon
The Infineon BSC059N04LSGATMA1 is an N-channel power MOSFET rated at 40 V drain-source voltage and 73 A continuous drain current (Tc), built on Infineon's OptiMOS 3 technology and housed in a SuperSO8 5x6 (PG-TDSON-8-5) surface-mount package. The part delivers a maximum on-state resistance of 5.9 mOhm at VGS=10 V and supports up to 50 W of power dissipation at 25 C case temperature, with a typical RthJC well below 2 C/W enabling very compact synchronous-rectifier and OR-ing designs. An N-channel power MOSFET is a voltage-controlled three-terminal device in which the gate-source electric field modulates a conducting channel between drain and source. Power MOSFETs are the fundamental switching element in modern switched-mode power supplies, motor drives, and battery protection circuits. They occupy a place in the broader hierarchy of discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs, and are increasingly being challenged by GaN HEMTs and SiC MOSFETs in very high-voltage or very high-frequency applications, but at sub-100 V rails silicon MOSFETs still dominate on cost and ruggedness. The headline figure is the ultra-low 5.9 mOhm maximum RDS(on) at 10 V VGS, achieved in a small 5x6 mm footprint. The device also features low gate charge (Qg typically around 25 nC for this family), a logic-level-compatible 4.5 V VGS(th) range, and is qualified to MSL1 (JEDEC J-STD-020) and RoHS/REACH compliance standards. The SuperSO8 package provides a low-thermal-resistance path and source-down bottom metal for direct PCB heat-sinking, which is critical when the FET is used as a low-side synchronous rectifier. OptiMOS 3 uses a trench-gate vertical DMOS cell structure optimised for low figure-of-merit (FOM = RDS(on) x Qg), reducing both conduction and switching losses compared to planar MOSFET generations of equivalent on-resistance. The 40 V rating gives substantial margin above nominal 12 V and 24 V bus voltages, and the 73 A continuous current makes the part suitable for high-current point-of-load converters and active battery balancing stages. Avalanche-rated single-pulse energy further increases robustness under inductive switching. Typical applications include synchronous rectification in 12 V buck and buck-boost converters for servers, telecom and datacom equipment, battery management and protection in e-mobility tools and e-bikes, OR-ing FETs in redundant power architectures, and low-side switches in motor-control and solenoid drivers. Designers often pair this part with a half-bridge gate driver such as the 2EDN7534 family on the control side. When designing with this part, pay close attention to gate-drive voltage: at VGS below 8-9 V the RDS(on) rises sharply and conduction loss grows. For very low-duty, low-loss applications consider the VGS=10 V guaranteed RDS(on) figure rather than typical. Layout must use wide copper pours under the source pad for thermal spreading and short Kelvin-source connection if available. This page synthesises distributor pricing as of 2026-09-14, verified drop-in alternatives drawn from the same Infineon OptiMOS 3 family, and practical design notes that supplement the manufacturer datasheet.
BSC060N10NS3GATMA1 - 100V 6mOhm OptiMOS 3 N-FET | Infineon
The Infineon BSC060N10NS3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 platform, rated at 100 V VDSmax with a typical on-resistance of 6 mOhm and continuous drain current of 14.9 A (Ta) / 90 A (Tc), housed in a PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. Per the manufacturer datasheet, this part delivers a 30 percent reduction in both RDS(on) and figure-of-merit compared to the previous OptiMOS generation, making it well suited to high-power-density switched-mode power supplies. A power MOSFET is a voltage-controlled three-terminal semiconductor device that uses an electric field at the gate to control current flow between the drain and source terminals. Within the discrete-semiconductor hierarchy, a power MOSFET belongs to the family of field-effect transistors -> transistors -> discrete semiconductors, and within Infineon's portfolio OptiMOS 3 sits in the high-performance low-voltage tier (40 V to 300 V) used in telecom, server, and consumer SMPS applications. The BSC060N10NS3 is optimized as a synchronous-rectifier or low-side switch where minimal conduction loss matters most than the fastest switching speed. Key specifications include 100 V drain-source breakdown voltage, 6 mOhm maximum RDS(on) at VGS = 10 V, 125 W power dissipation at Tc = 25 C, gate threshold VGS(th) of 2.0 V to 3.5 V, and an operating junction range of -55 C to +150 C. The PG-TDSON-8-1 (also called SuperSO8) footprint is a thermally-enhanced 5 mm x 6 mm DFN-style package with an exposed drain pad that doubles as the main heat-dissipation path. Typical applications include synchronous rectification in 48 V telecom bus converters, primary-side switching in telecom and server SMPS, motor-drive H-bridges, DC-DC buck and synchronous buck stages, and battery management protection in e-mobility and e-bike systems. The combination of low RDS(on) and small package footprint also makes it a strong fit for solar micro-inverters and industrial point-of-load regulators where board area and conduction loss dominate the thermal budget. When designing with this device, ensure the gate drive swings cleanly to 10 V for full enhancement and add a gate-source resistor (typically 10 kOhm to 100 kOhm) to prevent floating-gate turn-on. The exposed pad must be soldered to a sufficiently large copper pour (at least 1 square cm on each side of the board) to keep junction temperature within safe limits; the datasheet SOA curve shows the part can sustain roughly 50 A continuously at 25 C case temperature.
BSC060P03NS3EGATMA1 - 30V P-Ch MOSFET 6mΩ 100A OptiMOS | Infineon
The Infineon BSC060P03NS3EGATMA1 is a P-channel power MOSFET from the OptiMOS™ family rated at 30V VDS, with a maximum on-state resistance of 6 mΩ at VGS=10V and continuous drain current of 17.7A (Ta) up to 100A (Tc), housed in a SuperSO8 5x6 (PG-TDSON-8-1) surface-mount package. What is a P-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route or modulate current. A P-channel variant conducts when the gate is pulled below the source potential, which makes it ideal for high-side load switching where a low-side N-channel switch would require an extra bootstrap or charge-pump circuit. Within the broader taxonomy, this part belongs to: power MOSFET -> discrete semiconductor -> power management building block. OptiMOS™ is Infineon's trench-process technology platform, and the P-channel OptiMOS family targets applications needing the simplest possible gate-drive topology. Key specifications include a maximum gate threshold of 2.5V (typ), ultra-low RDS(on) of 6 mΩ at VGS=10V, total gate charge of 81 nC at VGS=10V, and a maximum power dissipation of 83W (Tc). The integrated exposed pad (SuperSO8) provides a thermal resistance on the order of low single-digit C/W with proper PCB copper area, supporting sustained high-current operation in space-constrained designs. The device uses Infineon's advanced trench technology to achieve a best-in-class figure-of-merit (FOM = RDS(on) × Qg), minimizing both conduction and switching losses. The P-channel polarity allows direct interfacing with low-voltage microcontroller GPIO outputs without a charge pump, simplifying high-side load-switch designs and reducing BOM count. Typical applications include load switching in 12V automotive and industrial rails, battery protection and OR-ing, DC-DC converters (especially as the high-side synchronous rectifier or control FET), USB power switches, motor drive H-bridges, and hot-swap controllers. The 30V rating provides ample margin for 12V bus transients. When designing with this MOSFET, pay attention to gate-drive strength: a 10V gate is required for the lowest RDS(on), but the part still turns on at ~-2.5V VGS(th) making it directly drivable from 3.3V or 5V logic via a small pull-up to source. Ensure the exposed pad has sufficient copper to dissipate the 83W maximum rating safely under realistic mounting conditions. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
BSC066N06NSATMA1 - 60V N-Ch MOSFET 6.6mΩ OptiMOS | Infineon
The Infineon BSC066N06NSATMA1 is an N-channel 60 V OptiMOS power MOSFET housed in a PG-TDSON-8-6 (TDSON EP) surface-mount package, rated for 64 A continuous drain current at 25°C case temperature with a maximum on-resistance of 6.6 mΩ at VGS=10 V. It is designed for high-efficiency DC-DC conversion and synchronous rectification in telecom, server, and automotive-grade power systems. An N-channel power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device (Gate, Drain, Source) that conducts current when a positive gate-to-source voltage exceeds the threshold. Power MOSFETs sit within the broader category of discrete semiconductors -> transistors -> MOSFETs -> power MOSFETs, and are the workhorse switching element in modern switched-mode power supplies (SMPS), motor drives, and battery protection circuits because they switch faster and dissipate less energy than bipolar transistors or relays. Key features include an ultra-low RDS(on) of 6.6 mΩ at VGS=10 V, a logic-level compatible gate threshold (typ. 1.7 V, fully enhanced at 4.5 V), and a repetitive avalanche-rated body diode. The PG-TDSON-8-6 package exposes the drain pad for direct thermal coupling to a top-side copper pour, achieving a junction-to-case thermal resistance of 1.3 °C/W and supporting 46 W continuous dissipation at Tc=25°C. The device is built on Infineon's OptiMOS 5 60 V process, which uses a trench-gate cell architecture combined with a low-resistance substrate. This yields both lower RDS(on) per unit area and superior switching FOM (RDS(on) × Qg) compared with planar MOSFETs of equivalent die size, making it suitable for high-frequency buck/boost converters where switching losses dominate. Typical applications include synchronous rectification in 48 V telecom and server intermediate bus converters, high-current DC-DC point-of-load regulators, eBike and power tool motor drives, and battery management system (BMS) charge/discharge switches. The wide SOA also supports hot-swap and OR-ing functions in redundant power architectures. When designing with this part, prioritize a top-side thermal copper pour tied to the exposed drain pad, and minimize the gate-drive loop inductance to prevent ringing above VGS(max)=±20 V. The device's logic-level threshold allows direct drive from 5 V PWM controllers, but a dedicated gate driver is recommended above 50 kHz switching frequency to achieve clean edges and minimize switching loss. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, giving engineers a one-stop reference for BOM qualification and second-source decisions.
BSC070N10NS5ATMA1 - 100V 7mOhm OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC070N10NS5ATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 5 100V technology, rated at 100V VDS max, 7 mOhm RDS(on) max, and 80A continuous drain current (Tc) in a SuperSO8 5x6 (PG-TDSON-8-7) surface-mount package. It is optimized for synchronous rectification in switched-mode power supplies, delivering up to 44% output capacitance reduction and up to 43% RDS(on) reduction versus the previous generation, which translates directly into lower switching and conduction losses and higher power density per square centimeter of board area. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal switching device that uses an insulated gate to modulate conduction between source and drain. Within the broader power-converter hierarchy, a MOSFET sits at the switching element of a buck, boost, or half-bridge converter, downstream of the PWM controller and upstream of the output inductor and capacitor; it belongs to the wider family of power discretes (MOSFETs, IGBTs), which are themselves a sub-category of discrete semiconductors used in power management applications. OptiMOS 5 is Infineon's fifth-generation 100V trench MOSFET platform, distinguished by a lower figure of merit (RDS(on) x Qg) than prior generations. Key differentiating specifications include a typical gate charge in the single-digit nC range for fast switching edges, a low Qrr body-diode reverse-recovery charge that suits continuous-conduction-mode (CCM) hard switching, and a PG-TDSON-8-7 package with an exposed thermal pad that keeps junction-to-case thermal resistance RthJC in the sub-1 C/W range - enabling 83W (Tc) power dissipation per the Infineon datasheet. The part is rated 2.5W at TA=25C without additional heatsinking, but PCB copper pours or an external heatsink are required at higher ambient temperatures. Typical applications include 48V telecom and server bus converters, synchronous rectification in isolated DC-DC bricks, motor-drive H-bridges for industrial fans and e-bikes, hot-swap and OR-ing controllers in 12V/24V/48V distribution, and high-frequency point-of-load (POL) converters for compute platforms. The OptiMOS 5 family is also widely used in solar micro-inverters and battery-management protection FETs where both low RDS(on) and small Qgd are simultaneously required. When designing with this device, select a gate driver capable of 4V to 10V VGS with sub-50ns propagation delay to exploit the part's fast switching capability. Place the gate-drive loop area to a minimum and use 1-2 ohms of external gate resistance to control dV/dt-induced ringing, and verify SOA at the intended switching frequency using the manufacturer's safe-operating-area curves rather than relying on pulsed thermal limits alone.
BSC072N08NS5ATMA1 - 80V 74A N-Channel OptiMOS 5 MOSFET | Infineon
The Infineon BSC072N08NS5ATMA1 is an 80 V N-channel power MOSFET rated for 74 A continuous drain current, featuring a maximum on-resistance of 7.2 mOhm, housed in a SuperSO8 / PG-TDSON-8-7 surface-mount package and built on Infineon's OptiMOS 5 technology platform. The part is offered in a tape-and-reel ATMA1 shipping pack and is qualified for industrial and consumer power conversion. What is an N-channel power MOSFET? A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to route and regulate current in electronic circuits. N-channel MOSFETs conduct between drain and source when a positive gate-source voltage is applied, offering low on-resistance per unit silicon area. Power MOSFETs form a sub-category of discrete semiconductors within the power management hierarchy, sitting alongside IGBTs, voltage regulators, and DC-DC converters, and they are typically used as synchronous rectifier or low-side switching elements in switched-mode power supplies (SMPS), motor drives, and battery management circuits. Key features of the BSC072N08NS5ATMA1 include a maximum drain-source voltage (VDS) of 80 V, continuous drain current of 74 A at case (Tc), pulsed current handling suited to inductive loads, an ultra-low typical on-resistance (RDS(on)) of 7.2 mOhm at VGS = 10 V, and an industry-standard SuperSO8 5x6 mm footprint. The OptiMOS 5 process trades lower gate charge and lower figure of merit (FOM) for the same RDS(on), directly reducing switching and conduction losses in 48 V and 24 V bus applications. Architecturally, OptiMOS 5 uses an advanced trench cell structure with optimized charge balance, achieving a low RDS(on)*Qg figure of merit versus earlier generations. The SuperSO8 package provides a low thermal resistance path through the exposed pad, supporting high continuous current without external heatsinking at moderate duty cycles. Typical applications for BSC072N08NS5ATMA1 include synchronous rectification in 48 V telecom and server bus converters, high-current buck or buck-boost converters in industrial point-of-load regulation, battery management and protection in 12 V/24 V Li-ion packs, brushless DC motor drive half-bridges, and solar micro-inverter low-side switches. The 80 V rating provides comfortable headroom for 24 V industrial and 36 V/48 V nominal bus rails. When designing with this MOSFET, ensure the gate driver can source and sink enough current to charge Qg within the desired switching period, and provide a low-impedance Kelvin source connection (the SuperSO8 pinout supports this) to keep gate-loop inductance low and avoid ringing. A heatsink or substantial copper pour is required for continuous high-current operation above 3-5 W dissipation. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet, including a side-by-side comparison against same-family Infineon OptiMOS 5 parts and competing N-channel MOSFETs in the same PG-TDSON-8-7 footprint.
BSC074N15NS5ATMA1 - 150V 7.4mΩ OptiMOS 5 N-MOSFET | Infineon
The Infineon BSC074N15NS5ATMA1 is a 150V N-channel power MOSFET built on Infineon's OptiMOS™ 5 trench technology, delivering a maximum drain-source on-resistance of 7.4 mΩ and a continuous drain current of 114 A at 25°C case temperature, packaged in a SuperSO8 5x6 (PG-TSON-8-3) outline with wettable flanks for automated optical inspection. A power MOSFET is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals; N-channel MOSFETs are the dominant switching device in modern synchronous buck converters, motor drives, and hot-swap controllers because their lower on-resistance per unit silicon area outperforms equivalent P-channel parts. The OptiMOS 5 family specifically targets 100V–300V applications where figure-of-merit (FOM = RDS(on) × Qg) reductions translate directly into lower switching losses and higher power density. Key features include a 7.4 mΩ maximum RDS(on) at VGS = 10V, 150V drain-source breakdown voltage, low gate charge for high-frequency switching, and an integrated wettable-flank package that simplifies solder joint inspection. The SuperSO8 5x6 footprint occupies roughly 30 mm² and exposes the drain tab for direct PCB heatsinking, eliminating the need for an isolated thermal interface. The OptiMOS 5 cell architecture combines a charge-balanced superjunction-style body region with a refined trench gate, achieving the lowest RDS(on)·Qg figure-of-merit in its voltage class. The part also integrates a robust body diode suitable for hard-switched bridge topologies, reducing reliance on external anti-parallel diodes in half-bridge and full-bridge configurations. Typical applications include telecom 48V hot-swap controllers, synchronous rectification in isolated DC-DC converters, Class-D audio amplifier output stages, and industrial motor drive half-bridges. Its 150V rating provides comfortable margin for 48V nominal telecom rails and 100V battery systems. When designing with this part, ensure gate-drive voltage reaches at least 10V for full enhancement, and place the gate-source resistor (typically 10–100 kΩ) close to the device to prevent inadvertent turn-on from Miller coupling during fast switching transitions. This page synthesizes Infineon OptiMOS 5 datasheet values, distributor pricing snapshots, and curated drop-in alternatives so procurement and design engineers can evaluate the BSC074N15NS5ATMA1 against pin-compatible 150V N-channel MOSFETs in a single, citation-ready view.
BSC076N04NDATMA1 - 40V 20A 7.6mOhm Dual N-MOSFET | Infineon
The Infineon BSC076N04NDATMA1 is a 40V dual N-channel MOSFET array built on Infineon's OptiMOS™ 3 trench technology, delivering 20A continuous drain current per channel with a maximum on-resistance of 7.6 mOhm at VGS=10V, housed in a SuperSO8 (PG-TDSON-8-4) 5x6 mm surface-mount package. It is qualified for high operating junction temperatures up to 175 C and offers superior thermal resistance for high power density designs in the smallest footprint. An N-channel MOSFET is a voltage-controlled four-terminal semiconductor switch (gate, drain, source, body) that conducts current when a positive gate-to-source voltage exceeds the threshold voltage (about 4V for this part). The BSC076N04NDATMA1 integrates two independent N-FETs in one package - the array belongs to the metal-oxide-semiconductor field-effect transistor (MOSFET) family, under discrete semiconductors in the power MOSFET hierarchy (MOSFET -> power transistor -> discrete semiconductor -> semiconductor). This architecture is widely used for synchronous rectification, half-bridges, and ORing circuits where two switches share one footprint. Key features include the OptiMOS™ 3 trench cell design that minimizes RDS(on) x gate charge (Qg) figure of merit, high shot-through immunity due to Qgd/Qgs ratio below 0.8 (reducing cross-conduction risk in half-bridge topologies), Pb-free plating, and RoHS compliance. The dual SuperSO8 package achieves substantially better thermal resistance than competing dual DFN packages while occupying only 5x6 mm of board area. Maximum power dissipation is 2.3W at TA=25 C and 65W at TC=25 C. The device uses a vertical trench MOSFET structure with N+ source and N- epitaxtial drift region; the low on-resistance is enabled by high cell density. OptiMOS™ 3 also reduces reverse-recovery charge (Qrr) of the intrinsic body diode, improving hard-switched efficiency. Typical applications include DC-DC converter synchronous buck stages, motor drive half-bridges, eFuse / hot-swap circuits, battery management ORing FETs, and Class-D audio amplifier outputs. The low RDS(on) minimizes conduction loss, while the 40V rating provides ample margin for 12V bus rails with transients. When designing, ensure VGS drive reaches at least 10V for full RDS(on) specification and keep gate-loop inductance low to suppress ringing. A 4V-7V gate-source absolute maximum should be respected if driven from logic-level signals. This page synthesizes distributor pricing, verified cross-reference alternatives, and practical PCB layout notes not found in the manufacturer datasheet, making it a one-stop engineering reference for BSC076N04NDATMA1 selection and qualification.
BSC076N06NS3GATMA1 - 60V 50A 7.6mΩ OptiMOS 3 N-MOSFET | Infineon
The Infineon BSC076N06NS3GATMA1 is an N-channel power MOSFET built on Infineon's OptiMOS 3 technology, rated for 60 V VDS and continuous drain current of 50 A at TC, packaged in a surface-mount PG-TDSON-8-5 (SuperSO8 5x6). It delivers an extremely low maximum on-resistance of 7.6 mΩ at VGS=10 V and 10.4 mΩ at VGS=4.5 V, making it one of the most efficient 60 V trench MOSFETs in this footprint. Power dissipation is 2.5 W on a 1 in² FR4 board at TA=25°C and 69 W with the case held at TC=25°C. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switch that uses an insulated gate to modulate current flow between source and drain terminals. The "N-channel" designation means conduction electrons form the channel, giving lower on-resistance per unit area than equivalent P-channel parts. In the broader taxonomy, MOSFETs sit under discrete semiconductors -> transistors -> field-effect transistors -> power switches. Low-RDS(on) OptiMOS devices sit at the high-efficiency end of this hierarchy. Key features of the BSC076N06NS3 include a logic-compatible 4.5 V drive threshold, low gate charge for high-frequency switching, and an optimized body diode that supports synchronous rectification topologies. The SuperSO8/PG-TDSON-8-5 footprint provides top-side cooling via the exposed pad, achieving a junction-to-case thermal resistance of approximately 1.8 K/W. The part is RoHS compliant and uses halogen-free molding compound. OptiMOS 3 uses Infineon's trench-gate process to shrink cell pitch and reduce both RDS(on) and gate charge simultaneously. The result is a figure-of-merit (FOM = RDS(on) × Qg) that is well below older planar 60 V generations, directly translating into lower conduction and switching losses in SMPS, motor drive, and ORing applications. The gate-oxide is rated for ±20 V VGS transients. Typical applications for this part include synchronous rectification in 48 V telecom and server DC-DC converters, hot-swap and ORing controllers in distributed power systems, high-current DC motor drives in industrial automation, and battery protection in 12 V/24 V e-mobility platforms. The combination of 50 A continuous current and 7.6 mΩ RDS(on) makes it ideal where both efficiency and thermal headroom are critical. Designers should pay close attention to gate-drive design: the 4.5 V VGS rating requires a true 10 V gate-drive rail for full enhancement, while 4.5 V operation works at the cost of higher RDS(on). PCB layout must minimize source-inductance loop area to limit voltage overshoot on the drain during switching transients above 50 A. This page synthesizes distributor pricing, parametric drop-in alternatives, and practical PCB layout notes not found in the Infineon datasheet - information designed for engineers selecting MOSFETs for power-conversion and motor-drive designs.
BSC077N12NS3GATMA1 - 120V OptiMOS 3 N-Ch MOSFET, 7.7mΩ | Infineon
The Infineon BSC077N12NS3GATMA1 is an N-channel power MOSFET from the 120 V OptiMOS 3 family, offering the industry's lowest on-state resistance (7.7 mΩ max) combined with the fastest switching behavior in a compact PG-TDSON-8-1 (SuperSO8 5x6) surface-mount package. The device is rated at 120 V VDS and delivers continuous drain current of 13.4 A at Ta (or 98 A at Tc), with a total power dissipation of 139 W at Tc. An OptiMOS power MOSFET is a trench-technology N-channel enhancement-mode device designed to minimize conduction and switching losses in power conversion stages, sitting in the hierarchy: trench MOSFET -> power MOSFET -> discrete semiconductor -> power management. The OptiMOS 3 120 V family balances ultra-low RDS(on) with low gate charge and excellent body-diode ruggedness, enabling high-frequency, high-efficiency designs. Key features include an industry-leading 7.7 mΩ maximum RDS(on) at VGS = 10 V, an excellent figure of merit (FOM = RDS(on) × Qg), and a 120 V drain-source breakdown voltage that provides substantial headroom over nominal 48 V or 72 V bus rails. The SuperSO8 5x6 package (PG-TDSON-8-1) provides a thermal resistance around 1.0 C/W (RthJC), supporting high-current operation with proper PCB thermal design. Technically, the device uses Infineon's third-generation OptiMOS trench process, which optimizes cell pitch and epitaxial structure to reduce both on-resistance and switching losses simultaneously. This makes it well suited for synchronous rectification, DC-DC conversion, motor drive, and hot-swap stages where high efficiency and small PCB footprint are mandatory. Typical applications include synchronous rectification in telecom and server SMPS, 48 V eMobility and mild-hybrid auxiliary converters, DC-DC buck/boost converters for industrial and computing systems, motor control and Class-D audio amplifiers, and hot-swap / OR-ing circuits on 48 V rails. The wide 120 V rating also makes it suitable for solar and battery management. A key design consideration is gate-drive voltage: the device is fully enhanced at VGS = 10 V, with a typical gate threshold of 2.5 V, so a 10 V driver is required to reach the published on-resistance. A small external gate resistor (4.7-10 Ω) controls ringing and EMI. The exposed pad must be soldered to a large copper pour for thermal performance. This page synthesizes distributor pricing, drop-in alternative cross-references, and practical design notes not found in the manufacturer datasheet alone, giving engineers a complete decision matrix for selecting or replacing the BSC077N12NS3GATMA1.
BSC084P03NS3GATMA1 - P-Ch 30V 78.6A OptiMOS P3 MOSFET | Infineon
The Infineon BSC084P03NS3GATMA1 is a P-channel power MOSFET built on Infineon's OptiMOS P3 platform, rated for -30 V VDS and continuous drain current up to 14.9 A (Ta) or 78.6 A (Tc) in a surface-mount PG-TDSON-8-5 package. Its headline figures are 6.1 mOhm Rds(on) at VGS = -10 V and 58 nC total gate charge, giving very low conduction and switching losses for 30 V-class load-switch and synchronous-rectifier applications. A P-channel power MOSFET is a voltage-controlled unipolar device in which the drain current flows when a negative gate-to-source voltage is applied. The P-channel variant is the polarity complement of an N-channel MOSFET; it is particularly useful in load-switch and high-side reverse-battery-protection circuits because it can be driven with the same ground-referenced logic that controls the upstream N-channel regulator, eliminating the need for a charge pump or bootstrap supply. Within the broader hierarchy, a P-channel MOSFET sits below discrete transistors, above power-management switch ICs, and inside the wider MOSFET > transistor > discrete semiconductor taxonomy. The OptiMOS P3 technology combines a trench-gate structure with optimized cell pitch to deliver the lowest Rds(on) per unit area in this voltage class. Key differentiators include 6.1 mOhm Rds(on) at -10 V VGS, an industry-leading figure-of-merit (FOM = Rds(on) x Qg), 110 pF Coss for low switching loss, and 1.52 nF Crss for good dv/dt immunity. The 69 W power dissipation rating (Tc) allows sustained high-current operation when the die is properly heatsinked via the exposed pad. Typical applications include load-switch management in notebook and tablet motherboards, high-side reverse-polarity protection in 12 V/24 V industrial systems, battery protection and OR-ing in Li-ion battery packs, synchronous rectification in buck converters, and motor-drive H-bridges where low-side switching requires a complementary P-channel device. The TDSON-8-5 footprint with exposed thermal pad is widely adopted in power-dense designs. When designing with this device, ensure that the gate drive swing reaches at least -10 V to achieve the datasheet Rds(on). Place a gate-to-source resistor (typically 10 kOhm to 100 kOhm) close to the IC pins to prevent floating-gate turn-on, and use the exposed pad as the primary thermal path with multiple thermal vias to inner copper planes.
BSC0901NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
The Infineon BSC0901NSATMA1 is an N-channel power MOSFET from the OptiMOS 30V family, rated at 30V VDS, 100A continuous drain current at Tc, and housed in a SuperSO8 / TDSON-8-5 (PG-TDSON-8-5) surface-mount package. Per the manufacturer datasheet, the part delivers an ultra-low typical on-state resistance of approximately 1.5 mOhm at 10V VGS, with a maximum rated RDS(on) of 1.9 mOhm, making it one of the lowest-resistance 30V parts in this footprint class. The 5x6 mm exposed-pad package supports 2.5W power dissipation at Ta and 69W at Tc. A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used to efficiently route or regulate current in power conversion circuits. Within the broader taxonomy, the BSC0901NSATMA1 belongs to the N-channel enhancement-mode MOSFET family, which itself is a sub-type of discrete power transistors used in switching power supplies, motor drives, and synchronous rectification. OptiMOS is Infineon's family of trench-gate power MOSFETs optimized for low RDS(on), low gate charge (Qg), and high switching frequencies, which together reduce both conduction and switching losses. Key differentiating specifications of the BSC0901NSATMA1 include its 30V drain-to-source breakdown voltage, 100A continuous drain current rating at the case, and ultra-low gate charge and output charge figures (typical Qg in the tens of nC range). The combination of low Qg and low RDS(on) yields an excellent FOM (Figure of Merit, RDS(on) x Qg), directly translating into higher efficiency in switched-mode power supplies. The part is rated for avalanche energy (EAS) of 80 mJ per the Vyrian listing and supports a moisture sensitivity level of 1. Technically, the BSC0901NSATMA1 is built on Infineon's advanced OptiMOS trench technology, which uses a shielded-gate structure to reduce on-resistance without compromising switching speed. The TDSON-8-5 package provides a low-inductance source connection (pin 2, 3 and exposed pad) and an internal Schottky-like body diode optimized for synchronous rectification. The result is a part suitable for hard-switching topologies at high frequencies with minimal ringing and reduced reverse-recovery losses. Typical applications for the BSC0901NSATMA1 include voltage regulator solutions (VRs) for servers, datacom and telecom, point-of-load (POL) converters, synchronous buck stages, hot-swap circuits, and battery protection / ORing in 12V distributed power architectures. The wide safety margin in VDS also makes it appropriate for motor drive and power tool applications. When designing with this part, ensure the gate drive voltage is at least 10V for full enhancement into the low-RDS(on) region. Use Kelvin-source (pin 2) connection on the gate driver return path to suppress source-inductance induced ringing, and place the gate driver within 5 mm of the gate pad to limit parasitic loop inductance. This page synthesizes distributor pricing, drop-in compatible alternatives, and practical design notes not found in the bare manufacturer datasheet, including a comparison table and selection guide for picking between the BSC0901NSATMA1 and pin-compatible OptiMOS family members.
BSC0901NSIATMA1 - 30V 100A OptiMOS N-Ch MOSFET | Infineon
The Infineon BSC0901NSIATMA1 is an N-Channel 30 V OptiMOS power MOSFET rated for 28 A continuous drain current at 25 C ambient (100 A pulsed at case temperature) housed in a compact surface-mount PG-TDSON-8-6 package. The device delivers ultra-low on-state resistance of approximately 2 mOhm at 10 V VGS combined with low gate charge, making it well suited to high-current DC-DC conversion in server, datacom, and telecom rails. Continuous drain power dissipation is rated 2.5 W at 25 C ambient and 69 W with case-temperature-controlled mounting, giving designers flexible thermal headroom depending on PCB copper area. A power MOSFET is a voltage-controlled switching device that uses an insulated gate to modulate current flow between drain and source terminals. Within the broader semiconductor taxonomy, MOSFETs belong to the discrete power transistor family alongside IGBTs and BJTs, and OptiMOS 25V specifically targets low-voltage, high-current synchronous rectification and hot-swap applications. The PG-TDSON-8-6 package family is a member of the SON/QFN-style surface-mount family, with a large exposed thermal pad enabling low junction-to-case thermal resistance for compact high-power-density designs. Key features include 30 V drain-source breakdown, 100 A pulsed drain current at Tc, 2 mOhm max R_DS(on) at 10 V VGS, 2.2 V maximum threshold voltage, and an integrated gate-source ESD protection structure. The OptiMOS 25V technology provides a figure-of-merit that combines low switching losses with low conduction losses - critical for MHz-class switching converters. The TDSON-8 footprint has a 5x6 mm body with an exposed drain pad that doubles as the thermal dissipation surface. Typical applications include server voltage regulator modules (VRMs), synchronous buck converters in datacom/telecom point-of-load regulators, hot-swap controllers, and battery protection in 12 V Li-ion packs. The 30 V rating also covers 24 V industrial bus rails with adequate transient headroom. When designing with this device, minimize high-frequency gate-loop inductance by keeping the gate drive return path directly over the source pad. A 10 V gate drive is recommended to fully enhance the channel; using 4.5 V gate drive increases R_DS(on) by roughly 2x. Always verify SOA against your actual switching profile and PCB thermal performance - the data above summarizes a design survey, not a substitute for a full bench characterization.
BSC0902NSATMA1 - 30V 100A OptiMOS N-Channel MOSFET | Infineon
The Infineon BSC0902NSATMA1 is an N-channel 30V OptiMOS power MOSFET optimized for high-performance synchronous buck converters, rated for 24A continuous drain current (Ta) and 100A pulsed drain current (Tc) with power dissipation of 2.5W (Ta) and 48W (Tc), housed in a PG-TDSON-8-6 (SuperSO8) surface-mount package. The device delivers very low on-state resistance at VGS=4.5V combined with ultra-low gate and output charge, making it ideally suited to voltage regulator solutions in servers, datacom, and telecom applications where efficiency and switching loss dominate the design budget. Per the Infineon datasheet, the part is 100% avalanche-tested, exhibits superior thermal resistance for the footprint, and is qualified to JEDEC standards for target applications. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently route or chop current in switching power supplies, motor drives, and load management circuits. The OptiMOS family sits in the broader taxonomy of power MOSFETs -> MOSFETs -> transistors -> discrete semiconductors, and represents Infineon's low-voltage, high-efficiency trench MOSFET platform designed for sub-60V rails. Key features of the BSC0902NSATMA1 include a low RDS(on) at 4.5V gate drive (allowing direct CPU/GPU/PMIC logic-level control without a gate driver charge pump), fast switching transition times that minimize dead-time losses in half-bridge topologies, and a SuperSO8 footprint with an exposed drain pad providing exceptionally low thermal resistance. Pb-free lead plating, RoHS compliance, and halogen-free qualification per IEC 61249-2-21 make it suitable for environmentally constrained designs. The combination of low Qg, low Qgd, and small Qrr translates directly into reduced switching and driver losses at high frequencies, enabling 500 kHz to 1 MHz buck operation. Architecturally, the BSC0902NSATMA1 uses an optimized trench-cell structure that achieves ultra-low specific on-resistance per unit area while maintaining low gate charge. This balance is the core OptiMOS value proposition: a smaller die can be used for a given RDS(on) target, shrinking both conduction loss and output charge simultaneously. Typical applications include high-frequency synchronous buck converters in server and telecom VRMs, point-of-load regulators in datacom equipment, CPU/GPU core rail power stages, OR-ing FETs in redundant power architectures, and high-current hot-swap circuits. The 30V drain-source rating also provides ample headroom for 12V-input POL designs, and the low gate charge enables multi-MHz operation in compact point-of-load converters. When designing with this device, prioritize minimizing the high-side gate-drive loop inductance (gate-driver to gate to source return) and place the low-side FET symmetrically. Use 1oz or 2oz copper on inner PCB layers beneath the exposed pad to keep the thermal rise per amp manageable, and verify SOA at the application's worst-case VDS and pulse duration. This page synthesizes distributor pricing, drop-in alternatives drawn from Infineon's OptiMOS family and competing 30V MOSFETs, and practical design notes that complement the manufacturer's application information.
BSC0902NSIATMA1 - 30V N-Ch OptiMOS MOSFET, PG-TDSON-8 | Infineon
Infineon BSC0902NSIATMA1 is an N-channel 30V OptiMOS power MOSFET rated for 23A continuous drain current (Ta) and 100A continuous drain current (Tc) in a compact PG-TDSON-8-6 (TDSON-8) surface-mount package. Key electrical characteristics include a maximum on-state resistance of 2.8 mOhm at VGS=10V, total gate charge QG(0V..10V) of 24 nC, and output charge QOSS of 17 nC. The device dissipates up to 2.5W at TA=25C and 48W at TC=25C. A power MOSFET is a voltage-controlled semiconductor switch used to efficiently convert and regulate electrical energy. N-channel MOSFETs in the OptiMOS 30V family belong to the broader category of power MOSFETs -> discrete semiconductors -> power management components, optimized for low RDS(on), low gate charge, and high switching frequency to minimize conduction and switching losses in synchronous rectification and DC-DC conversion. The BSC0902NSIATMA1 features Infineon's OptiMOS 30V technology platform, which combines trench-gate cell design with optimized die layout to achieve industry-leading figure-of-merit (FOM = RDS(on) x QG). The device's low QOSS improves light-load efficiency in resonant and soft-switched topologies, while the 30V VDS rating provides ample margin for 12V bus rails with transient tolerance up to automotive load-dump conditions. The PG-TDSON-8-6 package exposes the drain pad to a thermal pad with low thermal resistance, enabling high current handling on standard FR-4 PCB copper area. Typical applications include synchronous buck converters in server and datacom VRMs, telecom point-of-load (POL) regulators, high-current DC-DC modules, and OR-ing / hot-swap switches in 12V distributed power systems. The 30V rating also supports motor driver half-bridges and battery protection circuits in low-voltage lithium packs. When designing with this MOSFET, optimize the gate-drive loop to minimize parasitic inductance - keep gate drive traces short and place a 10-100 Ohm gate resistor close to the device to control ringing. Use Kelvin-source connection when available to separate gate-drive return from high-current source path. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes for the BSC0902NSIATMA1 beyond what is found in the manufacturer datasheet alone.
BSC0906NSATMA1 - 30V 63A OptiMOS N-Channel MOSFET | Infineon
The Infineon BSC0906NSATMA1 is an N-channel OptiMOS power MOSFET rated at 30V drain-to-source voltage and continuous drain current up to 63A (Tc), housed in a compact SuperSO8 / PG-TDSON-8-6 surface-mount package. The device achieves very low on-state resistance and ultra-low gate and output charge, making it suitable for high-efficiency switching conversion in tight PCB footprints. A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to modulate current flow between the source and drain terminals. The BSC0906NS belongs to the OptiMOS 30V product family, positioning it within the broader hierarchy: power MOSFET -> discrete semiconductor -> transistor -> active electronic component. The 30V drain-source rating indicates this part is optimized for low-voltage, high-current applications such as 12V rails, point-of-load converters, and battery protection. Key specifications include a maximum drain-source voltage of 30V, continuous drain current of 18A at ambient (Ta) and 63A at case (Tc), and power dissipation of 2.5W (Ta) / 30W (Tc). The SuperSO8 package footprint delivers an exceptionally low RDS(on) and minimal parasitic inductance, supporting high-frequency operation up to several hundred kHz without compromising efficiency. Typical applications include synchronous rectification in DC-DC buck and buck-boost converters for servers, datacom, and telecom systems, as well as hot-swap circuits, load switching, and motor drive stages. The OptiMOS technology balances switching speed with low gate charge, reducing both conduction and switching losses compared with older planar MOSFET families. When designing with this device, ensure the gate drive voltage fully enhances the channel (typically 10V) and use a sufficiently strong gate driver to source and sink the gate charge during fast transitions. Thermal management requires adequate copper pour on the source pad, which doubles as the thermal pad on PG-TDSON packages. This page synthesizes distributor pricing, same-brand and cross-brand drop-in alternatives, parametric comparison data, and practical design notes not available on a single DigiKey or Mouser product page.
BSC0911NDATMA1 - 25V Dual N-Channel MOSFET Array | Infineon
The Infineon BSC0911NDATMA1 is a dual N-channel MOSFET array from the OptiMOS 25V product family, integrating two synchronous FETs in a single PG-TISON-8 surface-mount power package. The device is rated for 25 V drain-source breakdown, 18 A continuous and 30 A pulsed drain current per channel, with a maximum power dissipation of 1 W. According to the DigiKey listing, the part is configured as a half-bridge MOSFET array targeting point-of-load and synchronous-buck topologies. A dual N-channel MOSFET array is a semiconductor device that combines two N-channel enhancement-mode FETs into one package, typically configured as a half-bridge (high-side + low-side). Such arrays fall under the broader categories of power MOSFET -> discrete semiconductor -> transistor, and are widely used as the synchronous rectifiers or switching elements in DC-DC converters, motor drivers, and battery management systems. By co-packaging both switches, designers save PCB area, reduce parasitic loop inductance between the two FETs, and simplify thermal management. Key features of the BSC0911NDATMA1 include the OptiMOS 25V trench technology platform, low on-state resistance for improved conduction loss, low gate charge for high-frequency switching, and an integrated package that reduces PCB footprint versus two discrete DFN MOSFETs. The 25 V rating suits point-of-load converters fed from 5 V or 12 V intermediate buses, where headroom margin over the maximum bus voltage is required. The OptiMOS platform uses an advanced trench cell architecture that minimizes RDS(on) x Qg figure-of-merit, enabling higher switching frequencies and smaller magnetics. Two co-packaged dies share a common exposed pad that conducts heat away to the PCB copper, allowing the 1 W package to deliver realistic continuous current in the 18 A range with proper thermal design. Typical applications for the BSC0911NDATMA1 include synchronous buck converters in telecom and networking equipment, low-voltage DC-DC modules in servers, USB-PD and Type-C charging rails, motor drive H-bridges in battery-powered equipment, and battery protection / load switching in 12 V battery management systems. The dual-FET configuration is especially useful where both switches of a buck stage must fit in a tight footprint. When designing with the BSC0911NDATMA1, follow Infineon's PG-TISON-8 PCB layout guidelines: provide adequate copper area beneath the exposed thermal pad, place gate-drive components close to the gate pins to minimize parasitic inductance, and respect the SOA limits shown in the datasheet for pulsed and DC operation. The 1 W power rating requires careful thermal management at high continuous currents. This page synthesizes distributor pricing across DigiKey, Mouser and Octopart, drop-in alternatives within the OptiMOS family, and practical design notes not collated in the manufacturer datasheet.
BSC0921NDIATMA1 - Dual N-Ch 30V OptiMOS 25V MOSFET | Infineon
The Infineon BSC0921NDIATMA1 is a dual N-channel MOSFET array based on Infineon's OptiMOS 25V technology, housed in the compact PG-TISON-8 surface-mount package with exposed pad. It delivers 17A continuous drain current per channel (31A pulsed, package-limited) and a maximum drain-source voltage of 30V, with 1W total power dissipation. The part is specifically engineered as a voltage regulator solution for servers, datacom, and telecom applications. Key parametric features include ultra-low gate charge (Qg) and output charge (Qoss), together with one of the lowest on-state resistances (RDS(on)) available in small footprint packages. This combination makes OptiMOS 25V the best-in-class choice for demanding synchronous buck converter designs where switching losses dominate. The dual-FET configuration integrates both high-side and low-side switches in a single package, reducing PCB area, parasitic loop inductance, and BOM count in point-of-load (POL) converters. The BSC0921NDIATMA1's low gate charge directly translates into reduced driver losses and faster switching edges, while the low Qoss minimizes body-diode-related losses during dead-time transitions. The PG-TISON-8 package's exposed thermal pad and low thermal resistance enable efficient heat extraction from both die, supporting continuous high-current operation in space-constrained server and telecom boards. The 30V voltage rating provides comfortable margin above the 25V maximum operating drain voltage typical of 12V bus applications. Typical applications include voltage regulator modules (VRMs) for server CPUs and memory, point-of-load converters in networking and telecom equipment, synchronous buck stages for graphics cards and FPGAs, and DC-DC blocks in distributed power architectures. The dual-die integration is particularly valuable in high-frequency (>500 kHz) designs where layout parasitics would otherwise erode efficiency. When designing with this part, ensure the exposed pad is soldered to a sufficient copper pour to dissipate dual-die power at full load. Both MOSFET channels share the same thermal pad and are electrically independent, allowing flexible high-side/low-side or parallel-FET topologies. Designers should follow Infineon's PG-TISON-8 land pattern recommendations to maintain the datasheet's thermal and electrical performance. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone.