BSC074N15NS5ATMA1 - 150V 7.4mΩ OptiMOS 5 N-MOSFET | Infineon
料号： BSC074N15NS5ATMA1 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $2.85 | $2.85 |
| 10 | $2.55 | $25.50 |
| 100 | $2.15 | $215.00 |
| 500 | $1.78 | $890.00 |
| 1,000 | $1.45 | $1,450.00 |
BSC074N15NS5ATMA1 概述
A power MOSFET is a voltage-controlled switch that uses an insulated gate to modulate current flow between drain and source terminals; N-channel MOSFETs are the dominant switching device in modern synchronous buck converters, motor drives, and hot-swap controllers because their lower on-resistance per unit silicon area outperforms equivalent P-channel parts. The OptiMOS 5 family specifically targets 100V–300V applications where figure-of-merit (FOM = RDS(on) × Qg) reductions translate directly into lower switching losses and higher power density.
Key features include a 7.4 mΩ maximum RDS(on) at VGS = 10V, 150V drain-source breakdown voltage, low gate charge for high-frequency switching, and an integrated wettable-flank package that simplifies solder joint inspection. The SuperSO8 5x6 footprint occupies roughly 30 mm² and exposes the drain tab for direct PCB heatsinking, eliminating the need for an isolated thermal interface.
The OptiMOS 5 cell architecture combines a charge-balanced superjunction-style body region with a refined trench gate, achieving the lowest RDS(on)·Qg figure-of-merit in its voltage class. The part also integrates a robust body diode suitable for hard-switched bridge topologies, reducing reliance on external anti-parallel diodes in half-bridge and full-bridge configurations.
Typical applications include telecom 48V hot-swap controllers, synchronous rectification in isolated DC-DC converters, Class-D audio amplifier output stages, and industrial motor drive half-bridges. Its 150V rating provides comfortable margin for 48V nominal telecom rails and 100V battery systems.
When designing with this part, ensure gate-drive voltage reaches at least 10V for full enhancement, and place the gate-source resistor (typically 10–100 kΩ) close to the device to prevent inadvertent turn-on from Miller coupling during fast switching transitions.
This page synthesizes Infineon OptiMOS 5 datasheet values, distributor pricing snapshots, and curated drop-in alternatives so procurement and design engineers can evaluate the BSC074N15NS5ATMA1 against pin-compatible 150V N-channel MOSFETs in a single, citation-ready view.
直接替换替代料： BSC074N15NS5ATMA1 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
本系列中的变体
可与以下型号直接替换的同系列型号： BSC074N15NS5ATMA1 （相同外形与封装尺寸） ——差异在于 Package, Technology, Mounting Type, Manufacturer, Drain-Source Voltage (VDS).
快速对比工具——选择替代料号进行并排对比：
BSC076N04NDATMA1
✅ 直接替换✓ 有现货
$0.82 / 个
查看数据手册 →BSC019N08NS5ATMA1
✅ 直接替换✓ 有现货
$1.78 / 个
查看数据手册 →IPP075N15N3GXKSA1
✅ 直接替换✓ 有现货
$1.92 / 个
查看数据手册 →IPB60R037P7XKSA1
✅ 直接替换📋 参考替代料（不在目录中）
BSC019N04LSTATMA1
✅ 直接替换✓ 有现货
$1.21 / 个
查看数据手册 →BSC074N15NS5ATMA1 最大额定值与电气特性
| 晶体管类型 | N-Channel MOSFET |
| Technology | OptiMOS™ 5 trench |
| Drain-Source Voltage (VDS) | 150 V |
| Continuous Drain Current (ID) at TC=25°C | 114 A |
| Power Dissition (PD) at TC=25°C | 214 W |
| On-Resistance RDS(on) max @ VGS=10V | 7.4 mΩ |
| 封装 | SuperSO8 5x6 (PG-TSON-8-3) with wettable flanks |
| 安装类型 | Surface Mount |
| RoHS 状态 | Compliant |
| Body Diode | Integrated |
BSC074N15NS5ATMA1 引脚配置
| 引脚 1 | Gate — MOSFET gate control input; drive to 10V for full enhancement |
| 引脚 2 | Source — Source terminal; connected to GND in low-side switching |
| 引脚 3 | Source — Source terminal; second source bond for high current |
| 引脚 4 | Source — Source terminal; thermal pad bypass |
| 引脚 5 | Drain — Drain terminal on bottom exposed pad |
| 引脚 6 | Drain — Drain terminal; connected to bottom pad internally |
| 引脚 7 | Source — Source terminal |
| 引脚 8 | Source — Source terminal |
典型应用
BSC074N15NS5ATMA1 适用于 6 应用s: 48V Telecom Hot-Swap Controller, Synchronous Rectification in Isolated DC-DC Converters, Class-D Audio Amplifier Output Stage, Industrial Motor Drive Half-Bridge, Solar Microinverter Switching Element, USB-C Power Delivery Source Switch.
48V Telecom Hot-Swap Controller
The BSC074N15NS5ATMA1 fits 48V telecom hot-swap and OR-ing applications because its 150V VDS rating provides 3x transient headroom above the nominal -48V bus and withstands IEEE 802.3 PoE++ transient events up to 100V. With 7.4 mΩ RDS(on) at 10V VGS and 114A continuous current, the device drops only ~0.37V at 50A load, simplifying thermal budgets for 2.5 kW front-end rectifier cards. Its SuperSO8 5x6 footprint with wettable flanks enables automated optical inspection on high-density line cards where reliability targets require AOI verification of every solder joint.
推荐
Synchronous Rectification in Isolated DC-DC Converters
The BSC074N15NS5ATMA1 serves as a synchronous rectifier on the secondary side of isolated 48V-to-12V or 96V-to-12V DC-DC bricks, replacing Schottky diodes to improve efficiency by 1–3%. Its low Qg and 7.4 mΩ RDS(on) keep switching losses manageable at 200–500 kHz switching frequencies typical of telecom bricks. The integrated body diode handles the dead-time conduction interval, while the SuperSO8 package's exposed drain pad provides a low thermal resistance path to inner PCB copper layers, eliminating the need for external heatsinks in surface-mount designs.
推荐
Class-D Audio Amplifier Output Stage
In Class-D audio amplifier half-bridge output stages, the BSC074N15NS5ATMA1's 7.4 mΩ RDS(on) keeps conduction losses below 0.5% even at 200W output into 8Ω loads, preserving amplifier efficiency above 95%. The 150V VDS rating supports amplifier rails up to ±75V, enabling high-power professional audio designs and subwoofer amplifiers. Its low gate charge reduces switching losses at the 250 kHz–1 MHz switching frequencies used in modern Class-D designs, while the SuperSO8 5x6 package provides sufficient thermal performance for 100W continuous operation with adequate copper pour.
推荐
Industrial Motor Drive Half-Bridge
The BSC074N15NS5ATMA1 fits industrial motor drive half-bridge configurations driving 100V–140V brushless DC motors in factory automation and robotics. Its 150V rating tolerates back-EMF spikes from inductive loads, while 7.4 mΩ RDS(on) minimizes thermal stress during continuous PWM operation at 20 kHz. The SuperSO8 footprint enables compact inverter PCB layouts, and the integrated body diode handles dead-time intervals in trapezoidal or sinusoidal commutation schemes without requiring external anti-parallel diodes.
推荐
Solar Microinverter Switching Element
The BSC074N15NS5ATMA1 works as a low-side or high-side switch in microinverter topologies converting 60V–100V solar panel outputs to grid-tied AC. Its 150V VDS rating handles maximum-power-point voltages from 96V solar strings plus inductive ringing transients. With 7.4 mΩ RDS(on), conduction losses remain low enough to achieve inverter efficiency above 97% at 400W output. The SuperSO8 5x6 package fits the dense PCB layouts typical of microinverter designs, where multiple switches share a small board area near the heatsink.
推荐
USB-C Power Delivery Source Switch
In USB-C PD 3.1 EPR source applications, the BSC074N15NS5ATMA1 functions as the VBUS protection switch handling 28V/36V/48V EPR PD profiles up to 5A continuous current. Its 150V VDS rating exceeds the maximum EPR voltage of 48V plus transient margin, while 7.4 mΩ RDS(on) keeps conduction losses under 0.5W at 5A. The integrated body diode handles cable-discharge events and inrush conditions during PD negotiation, making it suitable for high-power USB-C docking stations and laptop chargers.
推荐
推荐产品汇总
工程参考数据： BSC074N15NS5ATMA1 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | BSC076N04NDATMA1 | BSC019N08NS5ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|---|---|
| Package | SuperSO8 5x6 (PG-TSON-8-3) | SuperSO8 5x6 - same | SuperSO8 5x6 - same | SuperSO8 5x6 - same |
| Brand | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage VDS (V) | 150 V | 40 V | 80 V | 40 V |
| RDS(on) max at VGS=10V (mΩ) | 7.4 mΩ | 7.6 mΩ | 1.9 mΩ | 1.9 mΩ |
| Technology | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 |
| Wettable Flanks | Yes | Yes | Yes | Yes |
关键差异点
- Best-in-class RDS(on) at 150V in SuperSO8 footprint （对比 BSC019N08NS5ATMA1)
- Wettable-flank package for AOI compatibility （对比 IPP075N15N3GXKSA1)
- OptiMOS 5 technology with lowest figure-of-merit （对比 BSC076N04NDATMA1)
设计说明
Place the gate-drive loop (gate resistor to gate pin to source return) as physically small as possible to minimize parasitic inductance that causes ringing during fast switching transitions. For SuperSO8 designs, source pins 2, 3, 7, and 8 should all be tied together with a wide copper pour on the top layer to provide a low-impedance return path. The exposed drain pad (pin 5) requires thermal vias directly beneath to inner copper planes.
Estimated: at VIN=100V, VOUT=48V, IOUT=30A continuous in a buck converter, conduction loss alone is I²R = 30² × 0.0074 = 6.66W. With switching losses at 200 kHz, total dissipation may reach 8–10W. The SuperSO8 package requires at least 1 square inch of 2oz copper on the drain pad to keep junction rise below 50°C above ambient. Without adequate heatsinking, the junction will exceed 150°C and trigger thermal shutdown.
Do not exceed VGS = ±20V absolute maximum. For 12V gate drive systems, use a Zener clamp (15V) gate-to-source to protect against transients. Always include a 10kΩ gate-source pull-down resistor to ensure the MOSFET stays off during controller startup or loss of gate-drive supply. Reverse-current through the body diode can cause dv/dt-induced turn-on if dV/dt exceeds 5 V/ns - consider adding a small RC snubber.
合规信息
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - for automotive applications, consider AEC-Q100 qualified parts such as IPD50N06S409ATMA2 from Infineon's automotive portfolio.
