1ED020I12B2XUMA1 vs 1ED020I12FA2XUMA2 对比

详细并排对比 1ED020I12B2XUMA1 出自 Infineon 和 1ED020I12FA2XUMA2 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 ✓ 量产中

规格对比

参数 1ED020I12B2XUMA1 1ED020I12FA2XUMA2
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $2.65 $2.46
Driver Type Single-channel IGBT gate driver, galvanically isolated IGBT / SiC / GaN compatible
Isolation Technology Coreless transformer (magnetic coupling) Coreless transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms 4500 Vrms
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
封装 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-20
Creepage Distance 8 mm —
工作温度 -40 °C to +125 °C —
安装类型 Surface Mount Surface Mount
MSL 等级 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
功能 — Galvanically isolated single-channel IGBT gate driver
Output Current (Source/Sink) — 2 A (rail-to-rail)
Configuration — Single low-side / high-side driver
工作温度范围 — -40 C to +125 C
Automotive Qualification — AEC-Q100 qualified
Common-Mode Transient Immunity (CMTI) — [DATA_NEEDED: CMTI value]
Propagation Delay (typ) — [DATA_NEEDED: tpd value]
UVLO Primary Side — [DATA_NEEDED: VUVLO_VCC1]
UVLO Secondary Side — [DATA_NEEDED: VUVLO_VCC2]
Propagation Delay Matching — [DATA_NEEDED: matching value]
RoHS 状态 — Compliant
Insulation Type — Basic insulation per DIN EN 60747-5-2

数据手册与资源

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