1ED020I12B2XUMA1 vs 1ED020I12FA2XUMA2 비교

다음의 상세 나란히 비교: 1ED020I12B2XUMA1 제조: Infineon 및 1ED020I12FA2XUMA2 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

Infineon
1ED020I12FA2XUMA2 1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 - 2A Isolated Gate Driver | Infineon

1ED020I12FA2XUMA2 ✓ 활성

사양 비교

파라미터 1ED020I12B2XUMA1 1ED020I12FA2XUMA2
브랜드 Infineon Infineon
카테고리 Power MOSFET Drivers Power MOSFET Drivers
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $2.65 $2.46
Driver Type Single-channel IGBT gate driver, galvanically isolated IGBT / SiC / GaN compatible
Isolation Technology Coreless transformer (magnetic coupling) Coreless transformer (CT)
Isolation Voltage (Vrms) 4500 Vrms 4500 Vrms
Number of Channels 1 1
Output Current (typ.) 2 A source / 2 A sink —
Propagation Delay (typ.) 35 ns —
Supported Switch Voltage Class Up to 1200 V IGBT / SiC MOSFET —
DESAT Protection Yes (programmable threshold) —
Miller Clamp Yes (integrated 2 A clamp FET) —
Input Supply (VCC1) 5 V (logic side) —
Output Supply (VCC2) Unipolar 15 V or bipolar -8.5 V / 15 V —
패키지 PG-DSO-16-15 (300 mil wide-body DSO-16) PG-DSO-20
Creepage Distance 8 mm —
동작 온도 -40 °C to +125 °C —
실장 유형 Surface Mount Surface Mount
MSL 레벨 MSL-3 (per JEDEC J-STD-020) —
Compliance RoHS compliant —
기능 — Galvanically isolated single-channel IGBT gate driver
Output Current (Source/Sink) — 2 A (rail-to-rail)
Configuration — Single low-side / high-side driver
동작 온도 범위 — -40 C to +125 C
Automotive Qualification — AEC-Q100 qualified
Common-Mode Transient Immunity (CMTI) — [DATA_NEEDED: CMTI value]
Propagation Delay (typ) — [DATA_NEEDED: tpd value]
UVLO Primary Side — [DATA_NEEDED: VUVLO_VCC1]
UVLO Secondary Side — [DATA_NEEDED: VUVLO_VCC2]
Propagation Delay Matching — [DATA_NEEDED: matching value]
RoHS 상태 — Compliant
Insulation Type — Basic insulation per DIN EN 60747-5-2

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