1ED3124MC12HXUMA1 vs 1EDI60H12AHXUMA1 对比
详细并排对比 1ED3124MC12HXUMA1 出自 Infineon 和 1EDI60H12AHXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Infineon
1EDI60H12AHXUMA1 - 1200V Isolated Gate Driver, 10A Source | Infineon
1EDI60H12AHXUMA1 ✓ 量产中规格对比
| 参数 | 1ED3124MC12HXUMA1 | 1EDI60H12AHXUMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.45 | $2.18 |
| Channel Type | Single-channel | — |
| Configuration | High-side / Low-side (non-inverting) | — |
| Number of Drivers | 1 | — |
| 输出数量 | 1 | — |
| Peak Source Current | 13.5 A | — |
| Peak Sink Current | 14 A | — |
| Isolation Technology | Magnetic coupling (coreless transformer) | Galvanic isolation via coreless transformer |
| Isolation Voltage (RMS) | 5.7 kV | — |
| Transient Overvoltage | 8000 Vpk | — |
| Supply Voltage (VCC2) | 10.5 V to 35 V | — |
| Supply Current (Max) | 1.1 mA | — |
| Propagation Delay (Typ) | 90 ns | — |
| 上升时间 | 15 ns | — |
| 下降时间 | 30 ns | — |
| 工作温度 | -40 C to +125 C | -40C to +125C [DATA_NEEDED: confirm exact range from datasheet] |
| 封装 | PG-DSO-8 (DSO-8) | PG-DSO-8-59 (DSO-8 with 8 mm creepage) |
| 安装类型 | Surface Mount | Surface Mount |
| Protections | UVLO, Short-Circuit (DESAT) | — |
| Target Devices | IGBT, SiC MOSFET | — |
| RoHS 状态 | Compliant | Compliant |
| Product Type | — | Single-channel high-side gate driver IC |
| Isolation Voltage Rating | — | 1200 V |
| Number of Channels | — | 1 |
| Peak Source Current (typ.) | — | 10.0 A |
| Peak Sink Current (typ.) | — | 9.4 A |
| 输出配置 | — | Separate source and sink (SEP) outputs |
| Input Compatibility | — | CMOS / TTL logic |
| Driven Device | — | IGBT (and MOSFET / SiC compatible) |
| Creepage Distance | — | 8 mm |
| Short-Circuit Protection | — | Short-circuit clamping |
| MSL 等级 | — | 2 (1 year floor life) |