1ED3124MU12HXUMA1 vs 1EDN6550BXTSA1 对比
详细并排对比 1ED3124MU12HXUMA1 出自 Infineon 和 1EDN6550BXTSA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | 1ED3124MU12HXUMA1 | 1EDN6550BXTSA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.89 | $0.44 |
| Product Type | Single-channel isolated gate driver IC | Single-channel gate driver IC |
| Manufacturer Family | EiceDRIVER Compact 1ED31xxMU12H (X3 compact) | — |
| Peak Output Current (source/sink) | 14 A typical | — |
| 输出配置 | Separate source and sink pins | — |
| Galvanic Isolation (rms) | 5.7 kV (UL 1577) | — |
| Working Voltage (continuous) | 1200 V | — |
| Common-Mode Transient Immunity (CMTI) | 200 kV/us minimum | — |
| Propagation Delay (typ.) | 90 ns | — |
| UVLO Threshold | 10.5 V | — |
| Isolation Technology | Coreless transformer (CT) | — |
| 封装 | PG-DSO-8-66 (DSO-8 wide-body) | PG-SOT23-6-3 (SOT-23-6) |
| Creepage Distance | >8 mm | — |
| 工作温度范围 | -40C to +125C | — |
| Target Switch Types | IGBT, power MOSFET, SiC MOSFET | — |
| Recommended Switch Class | Up to 2300 V IGBT / SiC modules | — |
| 安装类型 | Surface Mount | Surface Mount |
| MSL 等级 | MSL2 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| RoHS 状态 | Compliant | Compliant |
| Driver Configuration | — | High-Side / Low-Side, Non-Inverting |
| 输出数量 | — | 1 |
| Peak Source Current | — | 4 A |
| Peak Sink Current | — | 8 A |
| Minimum Pulse Width | — | 29 ns |
| Input Type | — | Differential (TTL-compatible) |
| Supply Voltage Range | — | [DATA_NEEDED: VCC range] |
| UVLO Protection | — | Yes (integrated) |
| 工作温度 | — | -40C to +125C |
| 引脚数量 | — | 6 |