1EDN8511BXUSA1 vs 1EDB8275FXUMA1 对比

详细并排对比 1EDN8511BXUSA1 出自 Infineon 和 1EDB8275FXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
1EDN8511BXUSA1 1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 - 1-Ch 4A/8A Low-Side Gate Driver | Infineon

1EDN8511BXUSA1 ✓ 量产中
Infineon
1EDB8275FXUMA1 1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon

1EDB8275FXUMA1 - 5.4/9.8A Isolated Gate Driver | Infineon

1EDB8275FXUMA1 ✓ 量产中

规格对比

参数 1EDN8511BXUSA1 1EDB8275FXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.54 $1.72
Channel Count 1 —
Driver Configuration Low-side —
Peak Source Current 4 A —
Peak Sink Current 8 A —
Input Stage Inverting and non-inverting —
Propagation Delay Accuracy [DATA_NEEDED: typical propagation delay] —
UVLO Threshold 8 V —
Driver Supply Voltage (VCC) [DATA_NEEDED: VCC range upper limit] —
工作结温 -40 °C to +150 °C —
封装 PG-SOT23-6-2 PG-DSO-8 (150 mil wide-body)
安装类型 Surface Mount Surface Mount
引脚数量 6 —
Logic Input Compatibility TTL / CMOS —
Target Switch Type Power MOSFET, GaN HEMT —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL rating] —
功能 — Single-channel isolated gate driver
Number of Channels — 1
Isolation Type — Magnetic coupling (coreless transformer)
Isolation Voltage (Vrms) — 3000 Vrms
Peak Source Current (typ.) — 5.4 A
Peak Sink Current (typ.) — 9.8 A
CMTI (min.) — 300 V/ns
Propagation Delay (typ.) — [DATA_NEEDED: propagation delay value]
Output-side Supply Voltage — Up to 40 V (per datasheet family)
Input-side Supply Voltage — [DATA_NEEDED: VCC input range]
UVLO — Yes (input and output side)
Miller Clamp — Available in family
工作温度范围 — -40 C to +125 C (industrial)

数据手册与资源

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