2ED2106S06FXUMA1 vs 2ED21064S06JXUMA1 对比

详细并排对比 2ED2106S06FXUMA1 出自 Infineon 和 2ED21064S06JXUMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2106S06FXUMA1 2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 - 650V Half-Bridge Gate Driver IC | Infineon

2ED2106S06FXUMA1 ✓ 量产中
Infineon
2ED21064S06JXUMA1 2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 - 650V 0.7A Half-Bridge Gate Driver | Infineon

2ED21064S06JXUMA1 ✓ 量产中

规格对比

参数 2ED2106S06FXUMA1 2ED21064S06JXUMA1
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.78 $0.85
Offset Voltage (Voffset max) 650 V —
Configuration High-Side and Low-Side (Half-Bridge) Half-Bridge (2 outputs, non-inverting)
Source Current (typ.) 0.29 A —
Sink Current (typ.) 0.7 A —
Input Logic Compatibility CMOS, TTL 3.3 V / 5 V CMOS
Propagation Delay (typ.) 100 ns —
输出数量 2 (1 high-side, 1 low-side) —
Number of Drivers 2 —
引脚数 8 —
封装 PG-DSO-8-69 (DSO-8) PG-DSO-14 (14-pin SOIC)
安装类型 Surface Mount Surface Mount
Bootstrap Diode Integrated Integrated
工作温度范围 -40C to +125C —
Packaging Tape & Reel —
输出类型 Half-Bridge, Non-Inverting —
功能 — High-Side and Low-Side Gate Driver
拓扑 — High-Side, Low-Side with integrated bootstrap diode
Maximum Offset / Boot Voltage — 650 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.29 A
Sink Current (typical) — 0.7 A
Rise Time (typical) — [DATA_NEEDED: rise time]
Fall Time (typical) — [DATA_NEEDED: fall time]
Propagation Delay (typical) — 100 ns
Channel-to-Channel Delay Match — [DATA_NEEDED: channel-to-channel delay match]
Under-Voltage Lockout — Yes (both channels)
工作温度 — -40C to +125C
MSL 等级 — [DATA_NEEDED: MSL level]
RoHS 状态 — ROHS3 Compliant
Negative Gate Drive Robustness — -0.7 V

数据手册与资源

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