2ED2106S06FXUMA1 vs 2ED21064S06JXUMA1 Vergleich
Detaillierter Direktvergleich von 2ED2106S06FXUMA1 von Infineon und 2ED21064S06JXUMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | 2ED2106S06FXUMA1 | 2ED21064S06JXUMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,78 | $0,85 |
| Offset Voltage (Voffset max) | 650 V | — |
| Configuration | High-Side and Low-Side (Half-Bridge) | Half-Bridge (2 outputs, non-inverting) |
| Source Current (typ.) | 0.29 A | — |
| Sink Current (typ.) | 0.7 A | — |
| Input Logic Compatibility | CMOS, TTL | 3.3 V / 5 V CMOS |
| Propagation Delay (typ.) | 100 ns | — |
| Anzahl der Ausgänge | 2 (1 high-side, 1 low-side) | — |
| Number of Drivers | 2 | — |
| Anzahl der Pins | 8 | — |
| Gehäuse | PG-DSO-8-69 (DSO-8) | PG-DSO-14 (14-pin SOIC) |
| Montageart | Surface Mount | Surface Mount |
| Bootstrap Diode | Integrated | Integrated |
| Betriebstemperaturbereich | -40C to +125C | — |
| Packaging | Tape & Reel | — |
| Ausgangstyp | Half-Bridge, Non-Inverting | — |
| Funktion | — | High-Side and Low-Side Gate Driver |
| Topologie | — | High-Side, Low-Side with integrated bootstrap diode |
| Maximum Offset / Boot Voltage | — | 650 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.29 A |
| Sink Current (typical) | — | 0.7 A |
| Rise Time (typical) | — | [DATA_NEEDED: rise time] |
| Fall Time (typical) | — | [DATA_NEEDED: fall time] |
| Propagation Delay (typical) | — | 100 ns |
| Channel-to-Channel Delay Match | — | [DATA_NEEDED: channel-to-channel delay match] |
| Under-Voltage Lockout | — | Yes (both channels) |
| Betriebstemperatur | — | -40C to +125C |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| RoHS-Status | — | ROHS3 Compliant |
| Negative Gate Drive Robustness | — | -0.7 V |