2ED2738S01GXTMA1 vs IRS2110SPBF 对比

详细并排对比 2ED2738S01GXTMA1 出自 Infineon 和 IRS2110SPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2ED2738S01GXTMA1 2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 - 8A SOI Half-Bridge Gate Driver | Infineon

2ED2738S01GXTMA1 ✓ 量产中

规格对比

参数 2ED2738S01GXTMA1 IRS2110SPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.95 $0.72
Driver Configuration Half-Bridge (High-Side + Low-Side) —
Output Current (Source, peak) 4.0 A —
Output Current (Sink, peak) 8.0 A —
Output Current (Source, typ) 1.0 A —
Output Current (Sink, typ) 2.0 A —
输出数量 1 —
Input Type Non-Inverting —
Input Logic Compatibility TTL TTL / CMOS with hysteresis
Supply Voltage (VDD/VCC) 6 V to 20 V —
Bootstrap Supply Voltage Up to 600 V (HS pin rating) —
Propagation Delay (typ) 120 ns —
Channel-to-Channel Match 40 ns —
Rise/Fall Time (1 nF load) 1.5 ns / 1.5 ns —
Negative Transient Immunity (HS) -10 V to +20 V transient —
Under-Voltage Lockout VCC and Bootstrap —
Bootstrap Diode Integrated —
工作温度 -40C to +125C —
封装 PG-VSON-10-5 (3x3 mm) with EP 16-SOIC (SOIC-16 W)
安装类型 Surface Mount Surface Mount
MSL 等级 2 (1 year) 3
RoHS 状态 Compliant Compliant (Pb-free)
Driver Type — High and Low Side, Half-Bridge
Number of Drivers — 2
输出配置 — Non-Inverting
Peak Source/Sink Current — 2.5 A / 2.5 A
Offset Voltage (High-Side) — Up to 500 V
Logic Supply Voltage (VCC) — 10 V to 20 V
Floating Supply Voltage (VBS) — 10 V to 20 V (25 V abs max)
Propagation Delay (typ.) — 120 ns
Rise Time (typ.) — 25 ns
Fall Time (typ.) — 17 ns
Undervoltage Lockout — Yes (VCC and VBS)
工作温度范围 — -40 C to +125 C

数据手册与资源

浏览全部产品 创建 BOM 获取报价