2EDL8033G4BXTMA1 vs IR2104STRPBF 对比

详细并排对比 2EDL8033G4BXTMA1 出自 Infineon 和 IR2104STRPBF 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
2EDL8033G4BXTMA1 2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 - 120V Half-Bridge Gate Driver | Infineon

2EDL8033G4BXTMA1 ✓ 量产中
Infineon
IR2104STRPBF IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF - 600V Half-Bridge Gate Driver | Infineon

IR2104STRPBF ✓ 量产中

规格对比

参数 2EDL8033G4BXTMA1 IR2104STRPBF
品牌 Infineon Infineon
分类 Power MOSFET Drivers Power MOSFET Drivers
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.49 $0.59
拓扑 Half-bridge (high-side + low-side) —
Maximum Bootstrap Voltage (VBS) 120 V —
Source Drive Current 3 A —
Sink Drive Current 4 A —
Number of Channels 2 (HS + LS) —
Isolation Type Junction-isolated (non-galvanic) —
Input Logic Compatibility TTL 3.3 V, 5 V, 15 V logic
Input Common-Mode Range -10 V to 20 V —
Input Type Independent HS and LS —
Integrated Dead-Time Control Yes (programmable) —
Under-Voltage Lockout (VCC/VDD) Yes —
Under-Voltage Lockout (VBS/High-Side) Yes —
Shoot-Through Protection Yes —
封装 PG-VDSON-8-5 8-SOIC (SOIC-8)
安装类型 Surface Mount Surface Mount
RoHS 状态 Compliant Compliant
Marking Code 2ED8033G4B —
Product Type — Half-Bridge Gate Driver IC
Configuration — High-side and low-side referenced output channels
输出数量 — 2 (high-side + low-side)
Offset Voltage (High-Side, Max) — 600 V
Gate Drive Supply Voltage (VCC) — 10 V to 20 V
Output Source Current (typ) — 0.21 A
Output Sink Current (typ) — 0.36 A
Rise Time (typ) — 100 ns
Fall Time (typ) — 50 ns
Propagation Delay (typ) — 680 ns
Turn-On Propagation Delay (typ) — 150 ns
Turn-Off Propagation Delay (typ) — 130 ns
Quiescent Current (VCC/VBS, typ) — 150 uA
Shutdown Pin — Yes (active-low shutdown input)
Undervoltage Lockout — Yes (VCC and VBS)
Cross-Conduction Prevention — Yes (matched propagation delay)
dV/dt Immunity — Yes
Negative VS Transient Tolerance — Yes
工作温度范围 — -40 C to +150 C

数据手册与资源

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